The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

2010 ◽  
Vol 1250 ◽  
Author(s):  
Xinghua Wang ◽  
Sarjoosing Goolaup ◽  
Peng Ren ◽  
Wen Siang Lew
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Verwey Transition ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
X Ray ◽  
Sample Measurement

AbstractThin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

Effect of Sputtering Input Power of Co on Structure and Magnetic Properties of Fe-Co-N Thin Films

2009 ◽  
Vol 79-82 ◽  
pp. 635-638 ◽  
Author(s):  
Xin Wang ◽  
Hui Jia ◽  
Wei Tao Zheng ◽  
Wei Xu ◽  
Bei Hong Long
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Quantum Interference ◽  
Input Power ◽  
Superconducting Quantum Interference Device ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Composition Structure

Fe-Co-N thin films with various Co content were synthesized on Si (111) substrate using facing-target magnetron sputtering by changing sputtering input power on Co target. During deposition, the input power on Fe target was kept at 160 W. The composition, structure, and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and superconducting quantum interference device. XRD and TEM investigations showed that at lower input power of 11.2 W on Co target, the phases in the film were -(Fe,Co)4N and Co3N. Increasing sputtering input power, the content of Co in the film increased. At input power of 14 W, film contained -(Fe,Co)8N phase was produced which exhibited higher saturation magnetization (252.85 Am2/kg) and lower value of coercivity (3.66 kAm-1), corresponded to the 12% content of Co in the film.

Nanostructure and mechanical properties of WC–SiC thin films

2002 ◽  
Vol 17 (12) ◽  
pp. 3163-3167 ◽  
Author(s):  
Jose L. Endrino ◽  
James E. Krzanowski
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Photoelectron Spectroscopy ◽  
Nanocrystalline Structure ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Hardness Increase ◽  
Carbide Content

The mechanical properties of WC–SiC thin films deposited by dual radio frequency magnetron sputtering were investigated. The films were characterized by x-ray photoelectron spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM) to evaluate the details of the microstructure and degree of amorphization. The results indicate that small additions of SiC (<25%) can significantly increase hardness compared to a pure WC film, but higher SiC contents do not strongly affect hardness. XRD studies show the SiC had a disordering effect. TEM results showed that WC films had coarse porous structure, but films with a low silicon carbide content (approximately 10 to 25 at%) had a denser nanocrystalline structure. Samples with greater than 25% SiC were amorphous. The initial hardness increase at lower SiC contents correlated well with the observed densification, but the transition to an amorphous structure did not strongly affect hardness.

Investigation of the interface reactions of Ti thin films with AlN substrate

1997 ◽  
Vol 12 (3) ◽  
pp. 846-851 ◽  
Author(s):  
Xiangjun He ◽  
Si-Ze Yang ◽  
Kun Tao ◽  
Yudian Fan
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
X Ray ◽  
Interface Reactions ◽  
Transmission Electron ◽  
Argon Ion Bombardment

Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.

Formation of the YBa2Cu2NbOy phase in thin films

2009 ◽  
Vol 24 (1) ◽  
pp. 212-216
Author(s):  
Srinivas Sathiraju ◽  
Paul N. Barnes ◽  
Robert A. Wheeler
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
New Phase

We report the systematic substitution of Nb at the Cu1 site of YBa2Cu3Oy in thin films to form a new phase of YBa2Cu2NbO8. These films were deposited on SrTiO3(100) crystals using pulsed laser deposition and deposited at an optimal temperature of 850 °C. Films were characterized using x-ray diffraction (XRD), atomic force microscopy, x-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, and transmission electron microscopy. XRD of these films indicate c-axis oriented YBa2Cu2NbOy formation. XPS and micro-Raman spectroscopy analysis suggests Cu exists in the +2 state.

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

2018 ◽  
Vol 32 (19) ◽  
pp. 1840074 ◽  
Author(s):  
Viral Barhate ◽  
Khushabu Agrawal ◽  
Vilas Patil ◽  
Sumit Patil ◽  
Ashok Mahajan
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Spectroscopic Study ◽  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Layer Deposition

The spectroscopic study of La2O3 thin films deposited over Si and SiC at low RF power of 25 W by using indigenously developed plasma-enhanced atomic layer deposition (IDPEALD) system has been investigated. The tris (cyclopentadienyl) lanthanum (III) and O2 plasma were used as a source precursor of lanthanum and oxygen, respectively. The [Formula: see text]1.2 nm thick La2O3 over SiC and Si has been formed based on our recipe confirmed by means of cross-sectional transmission electron microscopy. The structural characterization of deposited films was performed by means of X-ray photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The XPS result confirms the formation of 3[Formula: see text] oxidation state of the lanthania. The XRD results reveals that, deposited La2O3 films deposited on SiC are amorphous in nature compare to that of films on Si. The AFM micrograph shows the lowest roughness of 0.26 nm for 30 cycles of La2O3 thin films.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals α-Cellulose Fibers of Paper-Waste Origin Surface-Modified with Fe3O4 and Thiolated-Chitosan for Efficacious Immobilization of Laccase

Polymers ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 581
Author(s):  
Gajanan S. Ghodake ◽  
Surendra K. Shinde ◽  
Ganesh D. Saratale ◽  
Rijuta G. Saratale ◽  
Min Kim ◽  
...  
Keyword(s):  
Enzyme Immobilization ◽  
Photoelectron Spectroscopy ◽  
Cellulose Fibers ◽  
Relative Activity ◽  
Significant Activity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Laccase Immobilization ◽  
Surface Modified

The utilization of waste-paper-biomass for extraction of important α-cellulose biopolymer, and modification of extracted α-cellulose for application in enzyme immobilization can be extremely vital for green circular bio-economy. Thus, in this study, α-cellulose fibers were super-magnetized (Fe3O4), grafted with chitosan (CTNs), and thiol (-SH) modified for laccase immobilization. The developed material was characterized by high-resolution transmission electron microscopy (HR-TEM), HR-TEM energy dispersive X-ray spectroscopy (HR-TEM-EDS), X-ray diffraction (XRD), vibrating sample magnetometer (VSM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR) analyses. Laccase immobilized on α-Cellulose-Fe3O4-CTNs (α-Cellulose-Fe3O4-CTNs-Laccase) gave significant activity recovery (99.16%) and laccase loading potential (169.36 mg/g). The α-Cellulose-Fe3O4-CTNs-Laccase displayed excellent stabilities for temperature, pH, and storage time. The α-Cellulose-Fe3O4-CTNs-Laccase applied in repeated cycles shown remarkable consistency of activity retention for 10 cycles. After the 10th cycle, α-Cellulose-Fe3O4-CTNs possessed 80.65% relative activity. Furthermore, α-Cellulose-Fe3O4-CTNs-Laccase shown excellent degradation of pharmaceutical contaminant sulfamethoxazole (SMX). The SMX degradation by α-Cellulose-Fe3O4-CTNs-Laccase was found optimum at incubation time (20 h), pH (3), temperatures (30 °C), and shaking conditions (200 rpm). Finally, α-Cellulose-Fe3O4-CTNs-Laccase gave repeated degradation of SMX. Thus, this study presents a novel, waste-derived, highly capable, and super-magnetic nanocomposite for enzyme immobilization applications.

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