Microstructures of Ultrathin Films of Sputtered PbTiO3

1994 ◽  
Vol 361 ◽  
Author(s):  
Kiyotaka Wasa ◽  
T. Satoh ◽  
K. Tab Ata ◽  
H. Adachi ◽  
Y. Ichikawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Ultrathin Films ◽  
Crystal Orientation ◽  
Smooth Surface ◽  
Three Dimensional ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dimensional Crystal

ABSTRACTUltrathin films of perovskite PbTiO3, 10–100nm thick, were epitaxially grown on miscut (001)SrTiO3 substrate by rf-magnetron sputtering at 600°C. The electron microscope and high resolution x-ray diffraction analysis suggested the evidence of epitaxial growth of (001)PbTiO3/(001)SrTiO3 with three dimensional crystal orientation. The stoichiometric film shows extremely smooth surface with the surface roughness less than 3nm. Deposition on a miscut substrate under stoichiometric conditions is essential to make continuous thin films of single crystal perovskite PbTiO3.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

scholarly journals Structural and Electrochemical Properties of Lithium Nickel Oxide Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Gyu-bong Cho ◽  
Tae-hoon Kwon ◽  
Tae-hyun Nam ◽  
Sun-chul Huh ◽  
Byeong-keun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Properties ◽  
Discharge Capacity ◽  
Oxygen Deficiency ◽  
Oxide Phase ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Nickel Oxide

LiNiO2thin films were fabricated by RF magnetron sputtering. The microstructure of the films was determined by X-ray diffraction and field-emission scanning electron microscopy. The electrochemical properties were investigated with a battery cycler using coin-type half-cells. The LiNiO2thin films annealed below 500°C had the surface carbonate. The results suggest that surface carbonate interrupted the Li intercalation and deintercalation during charge/discharge. Although the annealing process enhanced the crystallization of LiNiO2, the capacity did not increase. When the annealing temperature was increased to 600°C, the FeCrNiO4oxide phase was generated and the discharge capacity decreased due to an oxygen deficiency in the LiNiO2thin film. The ZrO2-coated LiNiO2thin film provided an improved discharge capacity compared to bare LiNiO2thin film suggesting that the improved electrochemical characteristic may be attributed to the inhibition of surface carbonate by ZrO2coating layer.

Highly C-Axis Oriented Barium Titanate Ferroelectric Films Deposited on SrTiO3 Substrate Using an Off-Axis Sputtered Conductive Oxide Layer as Bottom Electrode

2011 ◽  
Vol 399-401 ◽  
pp. 926-929
Author(s):  
Wei Zhang ◽  
Mei Ling Yuan ◽  
Xian Yang Wang ◽  
Jun Ouyang
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Ferroelectric Films ◽  
Axis Orientation ◽  
X Ray ◽  
Pure Argon ◽  
Single Target ◽  
Conductive Oxide

BaTiO3(BTO) thin films were grown on (100) SrTiO3(STO) single crystal substrates using the RF-magnetron sputtering technique (RFMS) in both pure argon and mixed Ar/O2(20% O2) atmosphere. A La0.5Sr0.5CoO3(LSCO) layer was deposited as the bottom electrode by a 90° off-axis single-target RFMS. θ-2θ X-ray diffraction measurements showed that BTO thin films grown in both cases had a highly preferred c-axis orientation (001). From hysteresis measurements, it was confirmed that both films are ferroelectric. The ferroelectric polarizations 2Pr were 6.6 μC/cm2and 27.1 μC/cm2, for the BTO films grown in pure argon and in mixed Ar/O2atmosphere, respectively.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Direct preparation and microstructure investigation of p-type transparent conducting Ga-doped SnO2 thin films

2010 ◽  
Vol 25 (S1) ◽  
pp. S36-S39 ◽  
Author(s):  
Tieying Yang ◽  
Xiubo Qin ◽  
Huan-hua Wang ◽  
Quanjie Jia ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Photoelectron Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fine Microstructure ◽  
Direct Preparation ◽  
Sno2 Thin Films ◽  
P Type ◽  
Reactive Rf Magnetron Sputtering

Transparent p-type conducting Ga-doped SnO2 thin films were prepared using reactive rf-magnetron sputtering. Good p-type conduction was directly realized without the need of postdeposition annealing. The p-type conductivity was found to be very sensitive to the growth condition and process, suggesting that the carrier behavior is strongly related to the fine microstructure of the films. The microstructures of the films were characterized using synchrotron X-ray diffraction and specular reflectivity techniques. The valence state of the Ga dopant was measured from X-ray photoelectron spectra to explain the origin of net holes presented in the films.

ZnO Films Deposited on Various Diamond Film Substrates with Different Surface Roughness

2011 ◽  
Vol 287-290 ◽  
pp. 2347-2350
Author(s):  
Rong Fan ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Diamond Film ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Axis Orientation ◽  
X Ray ◽  
Force Microscopy

ZnO thin films were deposited by radio frequency (R. F.) magnetron sputtering on various diamond film substrates with different surface roughness. The influence of surface roughness on structural properties and surface morphology of ZnO thin films was investigated by X-ray diffraction (XRD) and atom force microscopy (AFM), respectively. Only on the nanocrystalline and free-standing diamond substrates, ZnO films with preferential c-axis orientation and smooth surface were obtained.

Growth and Characterization of Lithium Niobate Thin Films on Diamond/Si(100) Substrates

1998 ◽  
Vol 541 ◽  
Author(s):  
Shunxi Wang ◽  
Qingxin Su ◽  
Marc A. Robert ◽  
Thomas A. Rabson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Smooth Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Scanning Electron ◽  
Organic Decomposition

AbstractA low temperature metal-organic decomposition process for depositing LiNbO3 thin films on diamond/Si(100) substrates is reported. X-ray diffraction studies show that the films are highly textured polycrystalline LiNbO3 with a (012) orientation. Scanning electron microscopy analyses reveal that the LiNbO3 thin films have dense, smooth surface without cracks and pores, and adhere very well to the diamond substrates. The grain size in the LiNbO3 thin films is in the range of ∼0.2-0.5 μm. The effect of the processing procedures on the surface morphology of the LiNbO3 films is investigated. Possible reasons for the elimination of microcracks in the LiNbO3 films are discussed.

Fabrication of High-Quality CuInSe2 Films by Coating, Compaction and Selenization

2012 ◽  
Vol 625 ◽  
pp. 287-290
Author(s):  
Jin Gang Xu ◽  
Yan Lai Wang ◽  
Hong Bo Nie
Keyword(s):  
Thin Films ◽  
Smooth Surface ◽  
Single Phase ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
New Phase ◽  
Cuinse2 Film ◽  
Selenization Process ◽  
Selenization Temperature

CuInSe2 thin films were successfully prepared by selenization of precursor films coated on the Mo foils. The precursor films were compacted to improve surface morphology and density of CuInSe2 thin films. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). The results indicate that the single-phase CuInSe2 is formed at 210 °C in selenization process and it exhibits preferred orientation along the (112) plane. The selenization temperature is above 210 °C, the selenization temperature rises to promote the crystallinity of selenized films, not to induce the occurrence of a new phase. The compact CuInSe2 film with smooth surface can be obtained by selenization of precursor films pressed with the pressure of 300 MPa.

Crystallization kinetics of yttrium aluminum garnet (Y3Al5O12)

2001 ◽  
Vol 16 (6) ◽  
pp. 1795-1805 ◽  
Author(s):  
Bradley R. Johnson ◽  
Waltraud M. Kriven
Keyword(s):  
Yttrium Aluminum Garnet ◽  
Three Dimensional ◽  
Constant Number ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Yttrium Aluminum ◽  
Temperature Transformation ◽  
Kinetics Of ◽  
Dimensional Crystal

The kinetics and pathways for crystallization of solid, amorphous, yttrium aluminum garnet (YAG) were studied using isothermal differential thermal analysis, x-ray diffraction, and transmission electron microscopy. The activation energy for crystallization was 437 KJ/mol and the measured Avrami exponent was 2.74, which corresponded to three-dimensional crystal growth with a constant number of nuclei. Time–temperature–transformation (T–T–T) curves were developed from the data to predict crystallization rates as a function of temperature. The crystallization pathway for YAG in this system is compared to others reported in the literature.

The Influence of the Crystalline Structure on the Electrical Properties of BaTiO3/SrRuO, Heterostructures

1994 ◽  
Vol 361 ◽  
Author(s):  
L.A. Wills ◽  
Jun Amano
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Crystalline Structure ◽  
Remanent Polarization ◽  
Rf Magnetron Sputtering ◽  
Processing Parameters ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities

ABSTRACTEpitaxial BaTiO3/SrRuO3 heterostructures were deposited on MgO and SrTiO3 substrates by 90° off-axis, rf-magnetron sputtering. A template layer growth was required to obtain epitaxy on MgO. The crystalline structure of the films was analyzed with x-ray diffraction. The leakage current and remanent polarization depended on the crystalline structure and processing parameters. The BaTiO3 thin films displayed remanent polarizations of 13 μC/cm2 and leakage current densities of 107 Amps/cm2 at 2 volts. The BaTiO3 thin films grown under optimal conditions displayed very little fatigue up to 5×108 cycles.

Sign in / Sign up

Export Citation Format

Share Document