Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films

2010 ◽  
Vol 1250 ◽  
Author(s):  
Xinghua Wang ◽  
Sarjoosing Goolaup ◽  
Peng Ren ◽  
Wen Siang Lew
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Native Oxide ◽  
X Ray Diffraction ◽  
Verwey Transition ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
X Ray ◽  
Sample Measurement

AbstractThin films of magnetite (Fe3O4) are grown on a single-crystal Si/SiO2 (100) substrate with native oxide using DC reactive sputtering technique at room tempreture (RT) and 300C. The x-ray diffraction(XRD) result shows the thermal energy during deposition enhances the crystallization of the Fe3O4 and x-ray photoelectron spectroscopy confirms the film deposited at 300C is single-phase Fe3O4 while the film deposited at RT is mostly ν-Fe2O3. The electrical measurements show that the resistivity of the Fe3O4 film increases exponentially with decreasing temperature, and exhibit a sharp metal-insulator transition at around 100 K, indicating the Verwey transition feature. The saturation magnetization Ms of Fe3O4 film measured by vibrating sample measurement (VSM) at RT was found to be 445 emu/cm3.

The location and effects of Si in (Ti1–xSix)Ny thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2483-2498 ◽  
Author(s):  
Axel Flink ◽  
Manfred Beckers ◽  
Jacob Sjölén ◽  
Tommy Larsson ◽  
Slawomir Braun ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Arc Evaporation ◽  
Annealing Experiments ◽  
Tissue Phase

(Ti1–xSix)Ny (0 ≤ x ≤ 0.20; 0.99 ≤ y(x) ≤ 1.13) thin films deposited by arc evaporation have been investigated by analytical transmission electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and nanoindentation. Films with x ≤ 0.09 are single-phase cubic (Ti,Si)N solid solutions with a dense columnar microstructure. Films with x > 0.09 have a featherlike microstructure consisting of cubic TiN:Si nanocrystallite bundles separated by metastable SiNz with coherent-to-semicoherent interfaces and a dislocation density of as much as 1014 cm−2 is present. The films exhibit retained composition and hardness between 31 and 42 GPa in annealing experiments to 1000 °C due to segregation of SiNz to the grain boundaries. During annealing at 1100–1200 °C, this tissue phase thickens and transforms to amorphous SiNz. At the same time, Si and N diffuse out of the films via the grain boundaries and TiN recrystallize.

Preparation of Perovskite Conductive LaNiO3 Films by Sol-Gel Techniques

2006 ◽  
Vol 933 ◽  
Author(s):  
Pei-Ying Lai ◽  
Jen-Sue Chen
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Raw Materials ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Metallic Thin Films ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Metallic Oxide ◽  
X Ray

ABSTRACTMetallic thin films of LaNiO3 (LNO) have been prepared by the sol-gel method using lanthanum nitrate [La(NO3)3·6H2O] and nickel acetate [Ni(CH3COO)2·4H2O] as raw materials. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrical measurements were used to characterize the multilayer LNO thin films. The perovskite phase appears after annealing at temperatures above 600 °C. LNO thin films are n-type metallic oxide. The lowest resistivity is 621 °Ω-cm after annealing at 600 °C, and the carrier concentration is 6.09×1022/cm3.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

scholarly journals Термодинамические свойства оксипентафторида ванадия (IV), (NH-=SUB=-4-=/SUB=-)-=SUB=-3-=/SUB=-VOF-=SUB=-5-=/SUB=-

2020 ◽  
Vol 62 (7) ◽  
pp. 1123
Author(s):  
Е.В. Богданов ◽  
Е.И. Погорельцев ◽  
А.В. Карташев ◽  
М.В. Горев ◽  
М.С. Молокеев ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Photoelectron Spectroscopy ◽  
Single Phase ◽  
Dielectric Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Limits Of Stability ◽  
Three Phase ◽  
Temperature Dependences ◽  
Spectroscopy Studies

Abstract The (NH_4)_3VOF_5 crystals have been synthesized and their homogeneity and single-phase structure has been established by the X-ray diffraction, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy studies. The investigations of the temperature dependences of specific heat, entropy, strain, and pressure susceptibility show the occurrence of three phase transitions caused by the structural transformations in the (NH_4)_3VOF_5 crystals. The T – p phase diagram shows the temperature limits of stability of the crystalline phases implemented in (NH_4)_3VOF_5. The optical and dielectric studies disclose the ferroelastic nature of the phase transitions. An analysis of the experimental data together with the data on the isostructural (NH_4)_3VO_2F_4 crystal makes it possible to distinguish the physical properties of oxyfluorides containing vanadium of different valences (IV and V).

Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 35-38
Author(s):  
Navaphun Kayunkid ◽  
Annop Chanhom ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Charge Carrier Mobility ◽  
Electrical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Hybrid Thin Films

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

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