The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode

2013 ◽  
Vol 702 ◽  
pp. 236-241 ◽  
Author(s):  
Mohammed A. Razooqi ◽  
Ameer F. Abdulameer ◽  
Adwan N. Hameed ◽  
Rasha A. Abdullaha ◽  
Ehsan I. Sabbar
Keyword(s):  
Carrier Transport ◽  
Electrical Characterization ◽  
Depletion Region ◽  
Cdte Film ◽  
Voltage Measurement ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Tunneling Recombination ◽  
Evaporation Technique

p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination. From current-voltage measurement at dark, the values of ideality factor are 2.9 and 3.8. The values of reverse saturation current are 3.77×10-7and 9.36×10-8Amperes.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Fabrication of a p-NiO/n-Si Heterojunction Diode by UV Oxidation of Ni Deposited on n-Si

2013 ◽  
Vol 1494 ◽  
pp. 305-309 ◽  
Author(s):  
Dongyuan Zhang ◽  
Kazuo Uchida ◽  
Shinji Nozaki
Keyword(s):  
Diffusion Length ◽  
Ultra Violet ◽  
Depletion Region ◽  
Metallic Nickel ◽  
Heterojunction Diode ◽  
Substrate Heating ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Voltage Dependent ◽  
Uv Oxidation

ABSTRACTThe metallic nickel (Ni) deposited on an n-Si substrate with resistivity of 4 – 6 Ω∙cm was oxidized by the ultra-violet (UV) oxidation technique to form a p-NiO/n-Si heterojunction diode. The rectifying current-voltage (I-V) characteristic confirmed formation of a pn junction. The capacitance-voltage (C-V) characteristic further identified an abrupt p+n junction between NiO and n-Si. The photocurrent increased with the increased wavelength of laser under illumination of the diode. The voltage-dependent photocurrent suggests that the carriers generated in the depletion region of Si was effectively collected but not outside the depletion region. A low diffusion length of holes was attributed to Ni diffusion in Si caused by the substrate heating during the UV oxidation.

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance

2020 ◽  
Vol 34 (10) ◽  
pp. 2050095
Author(s):  
Durmuş Ali Aldemir
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Series Resistance ◽  
Zero Bias ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Series ◽  
Contact Parameters

Zr/p-Si Schottky diode was fabricated by DC magnetic sputtering of Zr on p-Si. Zr rectifying contact gave a zero bias barrier height of 0.73 eV and an ideality factor of 1.33 by current–voltage measurement. The experimental zero bias barrier height was higher than the value predicted by metal-induced gap states (MIGSs) and electronegativity theory. The forward bias current was limited by high series resistance. The series resistance value of 9840 [Formula: see text] was determined from Cheung functions. High value of the series resistance was ascribed to low quality ohmic contact. In addition to Cheung functions, important contact parameters such as barrier height and series resistance were calculated by using modified Norde method. Re-evaluation of modified Norde functions was realized in the direction of the method proposed by Lien et al. [IEEE Trans. Electron Devices 31 (1984) 1502]. From the method, the series resistance and ideality factor values were found to be as 41.49 [Formula: see text] and 2.08, respectively. The capacitance–voltage characteristics of the diode were measured as a function of frequency. For a wide range of applied frequency, the contact parameters calculated from [Formula: see text]–[Formula: see text] curves did not exhibit frequency dependence. The barrier height value of 0.71 eV which was in close agreement with the value of zero bias barrier height was calculated from [Formula: see text]–[Formula: see text] plot at 1 MHz. The values of acceptor concentration obtained from [Formula: see text]–[Formula: see text] curves showed consistency with actual acceptor concentration of p-Si.

Effect of a-SiC:H Film Composition on the Performance of Large Area Optical Sensors

2001 ◽  
Vol 685 ◽  
Author(s):  
P. Louro ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira ◽  
M. Schubert
Keyword(s):  
Optical Sensors ◽  
Carrier Transport ◽  
Energy Band Diagram ◽  
Large Area ◽  
Conduction Band Offset ◽  
Sensor Performance ◽  
Diffusion Limited ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Limited Process

AbstractA series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0<x<1) were produced by PE-CVD at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage and capacitance-voltage characteristics. For the heterojunction cells Atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High serial resistances around 106 Ω are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the whole structures. Further comparison with the sensor performance gave satisfactory agreement.Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

2014 ◽  
Vol 806 ◽  
pp. 143-147
Author(s):  
P. Fiorenza ◽  
Marilena Vivona ◽  
L.K. Swanson ◽  
Filippo Giannazzo ◽  
C. Bongiorno ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cross Sectional ◽  
Direct Demonstration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
N Incorporation ◽  
The Impact ◽  
Post Deposition ◽  
Partial Compensation

In this paper a comparative study of the impact of N2O and POCl3 annealing on the SiO2/SiC system is presented, combining nanoscale electrical characterization of SiC surface doping by scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) to the conventional capacitance-voltage (C-V) and current-voltage (I-V) measurements on MOS-based devices. A significant reduction of the interface states density (from 1.8×1012 to 5.7×1011 cm-2eV-1) and, correspondingly, an increase in the carrier mobility (from 19 to 108 cm2V-1s-1) was found moving from N2O to POCl3 annealing. Furthermore, SSRM measurements on bare p+-type SiC regions selectively exposed to N2O and POCl3 at high temperature provided the direct demonstration of the incorporation of N or P-related donors in the SiC surface, leading to a partial compensation of substrate acceptors during N2O treatment and to an overcompensation during POCl3 annealing. Finally, cross-sectional SCM profiles performed on epitaxial n-doped 4H-SiC with 45 nm SiO2 (subjected to post deposition annealing in the two ambients) allowed to quantify the active donors concentrations associated to P or N incorporation under the gate oxide, showing almost a factor of ten higher doping (4.5×1018cm-3 vs 5×1017cm-3) in the case of P related donors.

scholarly journals Barrier Modification by Methyl Violet Organic Dye Molecules of Ag/P-Inp Structures

2016 ◽  
Vol 2 (3) ◽  
pp. 7 ◽  
Author(s):  
Ömer Güllü
Keyword(s):  
Barrier Height ◽  
Methyl Violet ◽  
Electrical Characterization ◽  
Interface State ◽  
State Density ◽  
Mis Structure ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Diode

This work includes fabrication and electrical characterization of Metal/Interlayer/Semiconductor (MIS) structures with methyl violet organic film on p-InP wafer. Metal(Ag)/ Interlayer (methyl violet =MV)/Semiconductor(p-InP) MIS structure presents a rectifying contact behavior. The values of ideality factor (n) and barrier height (BH) for the Ag/MV/p-InP MIS diode by using the current-voltage (I-V) measurement have been extracted as 1.21 and 0.84 eV, respectively. It was seen that the BH value of 0.84 eV calculated for the Ag/MV/p-InP MIS structure was significantly higher than the value of 0.64 eV of Ag/p-InP control contact. This situation was ascribed to the fact that the MV organic interlayer increased the effective barrier height by influencing the space charge region of inorganic semiconductor. The values of diffusion potential and barrier height for the Ag/MV/p-InP MIS diode by using the capacitance-voltage (C-V) measurement have been extracted as 1.21 V and 0.84 eV, respectively. The interface-state density of the Ag/MV/p-InP structure was seen to change from 2.57×1013 eV-1cm-2 to 2.19×1012 eV-1cm-2.

scholarly journals Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

2015 ◽  
Vol 33 (4) ◽  
pp. 669-676 ◽  
Author(s):  
Piotr Firek ◽  
Michał Wáskiewicz ◽  
Bartłomiej Stonio ◽  
Jan Szmidt
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Characterization ◽  
Ion Sensors ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Capacitor

AbstractThis work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current–voltage and capacitance–voltage methods

2007 ◽  
Vol 387 (1-2) ◽  
pp. 239-244 ◽  
Author(s):  
Mehmet Enver Aydin ◽  
Fahrettin Yakuphanoglu ◽  
Jae-Hoon Eom ◽  
Do-Hoon Hwang
Keyword(s):  
Schottky Diode ◽  
Electrical Characterization ◽  
Current Voltage ◽  
Capacitance Voltage
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