Controlled Fabrication of the CdS Nanocrystals Films and its Application in Hybrid Solar Cells

2013 ◽  
Vol 742 ◽  
pp. 139-142
Author(s):  
Wei Wei He ◽  
Hui Min Jia ◽  
Yan Lei
Keyword(s):  
Indium Tin Oxide ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Glass Substrates ◽  
Cds Nanocrystals ◽  
Ito Glass ◽  
One Step ◽  
Cds Film

In this paper, we fabricated the CdS nanocrystals film on indium-tin oxide (ITO) glass substrates through one-step solvothermal treatment of cadmium nanocrystals layer and sulfur powder in the presence of absolute ethanol. And then we spin-coated a poly (3-hexylthiophene) (P3HT) layer in the CdS film, and finally evaporated an Au electrode through a shadow mask. The resulting products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscope (AFM). A photovoltaic performance measurement of the fabricated device (ITO/CdS:P3HT/Au) shows a short circuit current density (Jsc) of 0.82 mA cm2, and a power conversion efficiency (η) of 0.03% under an illumination of 100 mW/cm2.

Optically-Enhanced Polymer Bulk Heterojunction Solar Cells by Addition of Gold Nanostructures

2015 ◽  
Vol 1094 ◽  
pp. 214-217
Author(s):  
Li Xin Zhang ◽  
Pan Pan Zhang ◽  
Da Ma ◽  
Yang Dang ◽  
Xin Chen ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Performance Enhancement ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Acid Methyl Ester ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Au Nps ◽  
Heterojunction Solar Cells ◽  
Ito Glass

We investigate the effects of Au nanoparticles (Au NPs) on poly [N-9′′-hepta-decanyl-2,14-carbazole-alt-5,5-(4′,14′-di-2-thienyl-2′,1,3′-benzothiadiazole)]:ph-enyl-C61-butyric acid methyl ester (PCDTBT:PCBM) based organic photovoltaic (OPV) devices by thermal evaporating Au NPs onto polytetrafluoroethylene (PTFE) layer which is based on indium-tin-oxide (ITO) glass substrate.Significant improvement in terms of short-circuit current density (Jsc) by 33.6%, fill factor (FF) by 0.9%, and thereby commensurate power conversion efficiency (PCE) by 40.7% were achieved compared to devices without Au NPs. The OPVs performance enhancement is attributed to the formation of Au NPs-induced surface plasmons that increases the rate of exciton generation, and the probability of exciton dissociation.

scholarly journals The Influence of the Thickness of Compact TiO2 Electron Transport Layer on the Performance of Planar CH3NH3PbI3 Perovskite Solar Cells

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3295
Author(s):  
Andrzej Sławek ◽  
Zbigniew Starowicz ◽  
Marek Lipiński
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Transport Layer ◽  
Electron Transport Layer

In recent years, lead halide perovskites have attracted considerable attention from the scientific community due to their exceptional properties and fast-growing enhancement for solar energy harvesting efficiency. One of the fundamental aspects of the architecture of perovskite-based solar cells (PSCs) is the electron transport layer (ETL), which also acts as a barrier for holes. In this work, the influence of compact TiO2 ETL on the performance of planar heterojunction solar cells based on CH3NH3PbI3 perovskite was investigated. ETLs were deposited on fluorine-doped tin oxide (FTO) substrates from a titanium diisopropoxide bis(acetylacetonate) precursor solution using the spin-coating method with changing precursor concentration and centrifugation speed. It was found that the thickness and continuity of ETLs, investigated between 0 and 124 nm, strongly affect the photovoltaic performance of PSCs, in particular short-circuit current density (JSC). Optical and topographic properties of the compact TiO2 layers were investigated as well.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Bandgap Energy ◽  
Single Junction

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

scholarly journals Benzothiadiazole Based Cascade Material to Boost the Performance of Inverted Ternary Organic Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 450 ◽  
Author(s):  
Miron Krassas ◽  
Christos Polyzoidis ◽  
Pavlos Tzourmpakis ◽  
Dimitriοs M. Kosmidis ◽  
George Viskadouros ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Fused Ring ◽  
Electron Cascade ◽  
First Time

A conjugated, ladder-type multi-fused ring 4,7-dithienbenzothiadiazole:thiophene derivative, named as compound ‘T’, was for the first time incorporated, within the PTB7:PC71BM photoactive layer for inverted ternary organic solar cells (TOSCs) realization. The effective energy level offset caused by compound T between the polymeric donor and fullerene acceptor materials, as well as its resulting potential as electron cascade material contribute to an enhanced exciton dissociation, electron transfer facilitator and thus improved overall photovoltaic performance. The engineering optimization of the inverted TOSC, ITO/PFN/PTB7:Compound T(5% v/v):PC71BM/MoO3/Al, resulted in an overall power conversion efficiency (PCE) of 8.34%, with a short-circuit current density (Jsc) of 16.75 mA cm−2, open-circuit voltage (Voc) of 0.74 V and a fill factor (FF) of 68.1%, under AM1.5G illumination. This photovoltaic performance was improved by approximately 12% with respect to the control binary device.

Plasmon-Enhanced Cell Efficiency in Hybrid Solar Cell Based on CdS Nanorod and Poly (3-Hexythiophene)

2013 ◽  
Vol 774-776 ◽  
pp. 753-756
Author(s):  
Xin Mei Liu ◽  
Feng Ming Fu ◽  
Wei Min Guo
Keyword(s):  
Solar Cell ◽  
Silver Nanoparticle ◽  
Indium Tin Oxide ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Hybrid Solar Cell ◽  
Thin Layers ◽  
Semiconductor Surface ◽  
Cds Nanorods

A bulk-heterjunction hybrid solar cell based on CdS nanorods as electron acceptor and conjugated polymers P3HT (Poly (3-Hexylthiophene)) as donor was fabricated through solution processing. Plasmon-active silver nanoparticle layers were introduced in the hybrid solar cell. Silver nanoparticle layers were fabricated using thermal evaporation deposition of 10 nm of silver thin layers on indium tin oxide (ITO) substrate followed by annealing. Under the surface plasmon excitation in Ag nanoparticles deposited on a semiconductor surface, increasing optical electrical field inside the photoactive layer led to an increased short circuit current density (Jsc) and improved fill factor (FF) of the cell. Consequently, under AM1.5G illumination (100 mW.cm-2), the plasmon-decorated cell based on CdS-nanorods/P3HT showed a four-times increase of the power conversion efficiency (PCE) compared with the undecorated one.

HYBRID ORGANIC SOLAR CELLS BLENDED WITH CNTs

2015 ◽  
Vol 22 (06) ◽  
pp. 1550072
Author(s):  
SUDIP ADHIKARI ◽  
HIDEO UCHIDA ◽  
MASAYOSHI UMENO
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photovoltaic Device ◽  
Device Fabrication ◽  
Walled Cnts

In this paper, composite carbon nanotubes (C-CNTs); single-walled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs) are synthesized using an ultrasonic nebulizer in a large quartz tube for photovoltaic device fabrication in poly-3-octyl-thiophene (P3OT)/ n - Si heterojunction solar cells. We found that the device fabricated with C-CNTs shows much better photovoltaic performance than that of a device without C-CNTs. The device with C-CNTs shows open-circuit voltage (Voc) of 0.454 V, a short circuit current density (Jsc) of 12.792 mA/cm2, fill factor (FF) of 0.361 and power conversion efficiency of 2.098 %. Here, we proposed that SWCNTs and MWCNTs provide efficient percolation paths for both electron and hole transportation to opposite electrodes and leading to the suppression of charge carrier recombination, thereby increasing the photovoltaic device performance.

Effect of CdCl2 Treatment of CdS Films on CdTe/CdS Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
W. Song ◽  
D. Mao ◽  
L. Feng ◽  
Y. Zhu ◽  
M. H. Aslan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
X Ray Diffraction ◽  
Cdcl2 Treatment ◽  
The Difference ◽  
Cds Films

AbstractWe investigated the effect of CdCl2 treatment of CdS films on the photovoltaic performance of polycrystalline CdTe/CdS solar cells. X-ray diffraction studies indicated that the diffusion of S into CdTe is qualitatively the same for CdTe/CdS films fabricated with both as-deposited and CdCl2-treated CdS. A major difference was observed in the extent of Te diffusion into CdS for the two types of CdS films. Full conversion of CdS into CdS1-yTey; was observed for films prepared with asdeposited CdS, while the formation of the ternary phase was below the detection limit for films prepared with CdCl2-treated CdS. Photoluminescence measurements confirmed this result. The difference in interdiffusion leads to differences in optical transmission of CdS films and spectral response of CdTe/CdS solar cells. An increase of 2.7 mA/cm2 in short-circuit current density was observed as a result of improved spectral response in the wavelength range of 500–600 nm for the CdCl2-treated CdS.

scholarly journals Synthesis of ZnxCd1-xSe@ZnO Hollow Spheres in Different Sizes for Quantum Dots Sensitized Solar Cells Application

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 132 ◽  
Author(s):  
Libo Yu ◽  
Zhen Li
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Exchange Process ◽  
Photovoltaic Performance ◽  
Hollow Spheres ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Composition Gradient ◽  
Sensitized Solar Cells ◽  
Zno Hollow Spheres

ZnxCd1-xSe@ZnO hollow spheres (HS) were successfully fabricated for application in quantum dot sensitized solar cells (QDSSCs) based on ZnO HS through the ion-exchange process. The sizes of the ZnxCd1-xSe@ZnO HS could be tuned from ~300 nm to ~800 nm using ZnO HS pre-synthesized by different sizes of carbonaceous spheres as templates. The photovoltaic performance of QDSSCs, especially the short-circuit current density (Jsc), experienced an obvious change when different sizes of ZnxCd1-xSe@ZnO HS are employed. The ZnxCd1-xSe@ZnO HS with an average size distribution of ~500 nm presented a better performance than the QDSSCs based on other sizes of ZnxCd1-xSe@ZnO HS. When using the mixture of ZnxCd1-xSe@ZnO HS with different sizes, the power conversion efficiency can be further improved. The size effect of the hollow spheres, light scattering, and composition gradient structure ZnxCd1-xSe@ZnO HS are responsible for the enhancement of the photovoltaic performance.

Preparation and Characterization of Cu-Ga-Se Films of Ordered Vacancy Compound

2003 ◽  
Vol 763 ◽  
Author(s):  
S. Nishiwaki ◽  
S. Siebentritt ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Short Circuit ◽  
Short Circuit Current ◽  
Bottom Layer ◽  
Soda Lime ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Chalcopyrite Structure ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates

AbstractCu-Ga-Se films with an orderd vacancy compound (OVC) structure were prepared at substrate temperature about 500 °C by thermal co-deposition. With a preparation under extremely Se excess condition, films of the OVC were synthesized within the compositional ratio of 0.73 ≤ [Ga]/([Cu]+[Ga]) ≤ 0.86 along Cu2Se-Ga2Se3 pseudo binary system. The growth on soda-lime glass substrates improves the crystallinity compared to that on alkali-free glass. An increase in the optical bandgaps of OVC films from 1.85 eV to 1.94 eV was observed with an increase in the Ga content of the films. The deposition of Cu and Se onto Ga2Se3 films resulted in a vertically inhomogeneous film: the bottom layer with the OVC structure and the top layer with the chalcopyrite structure. A solar cell using the CuGa5.0Se8.1 film within a ZnO/CdS/CuGa-Se/Mo/soda-lime glass substrate structure showed an open circuit voltage of 947 mV, an efficiency of 2.2 %, a short circuit current density of 4.5 mA/cm2, and a fill factor of 0.52 (Air Mass 1.5, 0.5 cm2, total area).

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