Co-Electrodeposition and Characterization of Ag-Ag2S-PbS Thin Films on Indium-Tin-Oxide Coated Glass

2014 ◽  
Vol 900 ◽  
pp. 397-400 ◽  
Author(s):  
Yuan Ming Zhang ◽  
Lin Chen ◽  
Hong Cheng Pan

The Ag-Ag2S-PbS thin films were co-electrodeposited on indium-tin-oxide (ITO) coated glass substrates from aqueous solutions containing 0.01 M AgNO3, 0.01 M Pb (NO3)2, 0.1 M Na2S2O3, 0.02 M ethylenediaminetetraacetic acid disodium salt, and 0.5 M Na2SO4. X-ray diffraction (XRD), scanning electron microscopy (SEM), and cyclic voltammetry (CV) were used to investigate the Ag-Ag2S-PbS thin films. The X-ray diffraction analysis demonstrated the presence of cubic structure of metallic silver, acanthite Ag2S, and cubic PbS, which is consistent with the CV analysis. The effect of different Ag+/Pb2+ratios on the morphology and composition of the Ag-Ag2S-PbS thin films were also studied.

2013 ◽  
Vol 721 ◽  
pp. 33-36 ◽  
Author(s):  
Hong Cheng Pan ◽  
Xue Peng Li ◽  
Wei Hong Liu ◽  
Yan Bin Ren

ZnS thin films were deposited on indium–tin-oxide (ITO) coated glass substrates by a chemical bath deposition method. Then the ZnS/ITO slides were immersed in the solution containing 6 mM phosphate buffer solution (pH 7.4), sodium polyacrylate (0.01% w/w), and 0.24 mM AgNO3 at 37°C for 3 h to growth Ag2S films on the surface of ZnS/ITO slides. The absorption band of Ag2S/ZnS/ITO slide displays a considerably blue-shifted. The X-ray diffraction analysis demonstrated the presence of acanthite Ag2S on the surface of ZnS/ITO slides, which is consistent with the cyclic voltammetic data.


2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.


Author(s):  
T. Joseph Sahaya Anand ◽  
Rajes K. M. Rajan ◽  
Md Radzai Said ◽  
Lau Kok Tee

Thin films of nickel chalcogenide, NiX2 (X= Te, Se) have been electrosynthesized on indium-tin-oxide (ITO) coated glass substrates. The films were characterized for their structural, morphological and compositional characteristics. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between -0.9-(-1.1) V. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals that the films were adherent to the substrate with uniform and pin-hole free. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Ni, Te, and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of p-type material.


2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


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