Investigation of Photoinduced Electrical Properties in the Heterojunction TiO2/SnO2

2014 ◽  
Vol 975 ◽  
pp. 201-206
Author(s):  
Diego Henrique de Oliveira Machado ◽  
Emerson Aparecido Floriano ◽  
Luis Vicente de Andrade Scalvi ◽  
Margarida Juri Saeki
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Deep Level ◽  
Quartz Substrate ◽  
Dominant Role ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
External Layer ◽  
Electrical Transport Properties ◽  
Rutile Structure

TiO2/SnO2 thin films heterostructures are grown by the sol-gel-dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550°C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100°C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. Electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65eV) seems to excite the most external layer whereas a InGaN LED (2.75eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

Effect of Sintering on Structural and Transport Properties on Nanosized Pr0.85Na0.15MnO3

2015 ◽  
Vol 1107 ◽  
pp. 272-277 ◽  
Author(s):  
Siau Wei Ng ◽  
Kean Pah Lim ◽  
S.A. Halim ◽  
Hassan Jumiah ◽  
Albert H.M. Gan ◽  
...  
Keyword(s):  
Grain Size ◽  
Transport Properties ◽  
Electrical Transport ◽  
Boundary Effect ◽  
Sol Gel ◽  
Magnetic Layer ◽  
Electrical Transport Properties ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Semiconductor Behavior

We have investigated the structural, microstructure and electrical transport properties of nanosized Pr0.85Na0.15MnO3 (PNMO) synthesized by sol-gel technique and sinter from 600°C to 1000°C. The grain size increases from 67 nm (S600) up to 284 nm (S1000) due to the grain growth during heat treatment. XRD showed that single phase orthorhombic crystal structure of PNMO is fully forms started at 600°C. The resistivity decreased with the increased of grain size and crystallite size due to the reduction of grain boundary effect (dead magnetic layer) which improved their grain conductivity.All samples showed semiconductor behavior where their metal insulator transition temperatures (TMIT) were estimated to be lower than 80K.

Structural and electrical properties of ZnO/Zn0.85Mg0.15O thin film prepared by pulsed laser deposition

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744056 ◽  
Author(s):  
Jing-Jing Yang ◽  
Gang Wang ◽  
Wen-Han Du ◽  
Chao Xiong
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Lattice Structure ◽  
Quantum Effect ◽  
Impurity Scattering ◽  
Hexagonal Wurtzite Structure ◽  
Electrical Transport Properties ◽  
Typical Material ◽  
Structural And Electrical Properties ◽  
Dimensional Electron Gas

The electrical transport properties are the key factors to determine the performance of ZnO-based quantum effect device. ZnMgO is a typical material to regulate the band of ZnO. In order to investigate the electrical properties of the interface of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films, three kinds of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films have been fabricated with different thickness. After comparing the structural and electrical properties of the samples, we found that the independent Zn[Formula: see text]Mg[Formula: see text]O hexagonal wurtzite structure (002) peak can be detected in XRD spectra. Hall-effect test data confirmed that the two-dimensional electron gas (2DEG) became lower because of the decrease of thickness of Zn[Formula: see text]Mg[Formula: see text]O films, increase of impurity scattering and lattice structure distortion caused by the increase of Mg content.

scholarly journals Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 254 ◽  
Author(s):  
Changmin Lee ◽  
Won-Yong Lee ◽  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Electrical Transport ◽  
Thin Film Transistors ◽  
Vacancy Concentration ◽  
Operation Mode ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Oxygen Vacancy Concentration ◽  
Electrical Transport Properties

Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive Vth shift.

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Hole Concentration ◽  
Electrical Transport Properties ◽  
Capacitance Voltage ◽  
Experimental Values ◽  
Cv Measurements ◽  
P Type ◽  
Secondary Ion

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

Magnetic and electrical transport properties of Sr2Ti1−xCoxO4 ceramics by sol–gel

2017 ◽  
Vol 31 (17) ◽  
pp. 1750195
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Sol Gel ◽  
Variable Range Hopping ◽  
Electrical Transport Properties ◽  
Co Doping ◽  
Hopping Model ◽  
Variable Range Hopping Model ◽  
Co Doped

Microstructures, electrical transport and magnetic properties of Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics are investigated. With Co doping, the Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics remain tetragonal structure while the grain size is decreased with doping. Magnetic moment is enhanced with Co doping and ferromagnetism is observed at low temperatures for Co-doped Sr[Formula: see text]TiO[Formula: see text]. The Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] and Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] show semiconductor-like transport properties, which can be well fitted by Mott variable range hopping model. The results will provide an effective route to synthesize Sr[Formula: see text]Ti[Formula: see text]Co[Formula: see text]O[Formula: see text] ceramics as well as to investigate the physical properties.

Oxygen Diffusivity and Defect Transport in Pure and Yb Doped Nano-crystalline Ceria

2003 ◽  
Vol 788 ◽  
Author(s):  
Laxmikant Saraf ◽  
V. Shutthanandan ◽  
S. Thevuthasan ◽  
C. M. Wang ◽  
K. T. Koch ◽  
...  
Keyword(s):  
Grain Size ◽  
Electrical Transport ◽  
Oxygen Diffusion ◽  
Defect Density ◽  
Sol Gel ◽  
Ionic Transport ◽  
Nuclear Reaction Analysis ◽  
Electrical Transport Properties ◽  
Nano Crystalline ◽  
Average Grain Size

ABSTRACTOxygen (18O) diffusivity in sol-gel synthesized nano-crystalline ceria films of average grain size of 3 nm and 7 nm, annealed at 300 °C and 450 °C for one hour respectively is examined by nuclear reaction analysis (NRA). Diffusivity and electrical transport properties measured by a. c. impedance spectroscopy were compared with microcrystalline ceria film of average grain size 38 nm annealed at 900 °C for one hour. Effect of enhanced oxygen diffusion along with reduced ionic transport in nano-crystalline ceria and reduced oxygen diffusion along with enhanced ionic transport in microcrystalline ceria are correlated to long range ordering, grain boundary scattering and defect density. Enhancement in the conductivity with reduction in activation energy from 1 eV to 0.5 eV in the case 4 atom% ytterbium (Yb) doped ceria compared to pure ceria is a result of increased oxygen vacancies taking part in the defect transport.

Structural and electrical properties of Nd1.7Ba0.3Ni0.9Cr0.1O4+δ compound

2012 ◽  
Vol 27 (3) ◽  
pp. 184-188 ◽  
Author(s):  
Manel Jammali ◽  
Rached Ben Hassen ◽  
Jan Rohlicek
Keyword(s):  
Electrical Transport ◽  
Small Polaron ◽  
Sol Gel ◽  
Polycrystalline Sample ◽  
Xrd Analysis ◽  
Electrical Transport Properties ◽  
Polaron Hopping ◽  
X Ray ◽  
Cell Parameters ◽  
Structural And Electrical Properties

The Nd1.7Ba0.3Ni0.9Cr0.1O4+δ polycrystalline sample was synthesized by the sol–gel process and a subsequent annealing at 1523 K in 1 atm of flowing argon. X-ray diffraction (XRD) analysis and electrical transport properties have been investigated as well. The oxygen non-stoichiometry was determined by iodometric titration. The sample shows adoption of the K2NiF4-type structure based on a tolerance factor calculation. Rietveld refinement of the crystal structure from X-ray powder diffraction data confirmed that Nd1.7Ba0.3Ni0.9Cr0.1O4+δ adopts the tetragonal structure (space group I4/mmm, Z = 2). The room temperature unit-cell parameters are determined to be a = 3.82515(2) and c = 12.47528(6) Å. The reliability factors are: RB = 0.043, Rwp = 0.012 and χ2 = 3.00. The Nd1.7Ba0.3Ni0.9Cr0.1O4+δ compound exhibits a semi-conductive behaviour. The electrical transport mechanism has been investigated and it agrees with the adiabatic small polaron hopping model in the temperature range 313 K ≤ T ≤ 708 K.

Influence of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Sol-Gel SnO2 Thin Films

2018 ◽  
Vol 52 ◽  
pp. 15-20 ◽  
Author(s):  
Ji Tao Li ◽  
Ding Yu Yang ◽  
Xing Hua Zhu ◽  
Xu Li ◽  
Shu Qi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Raw Materials ◽  
Sol Gel ◽  
Optical Energy Gap ◽  
Sem Images ◽  
Rutile Structure ◽  
Chloride Dihydrate

SnO2 thin films were prepared on glass substrates by sol-gel spin coating method using stannous chloride dihydrate and ethyl alcohol absolute as raw materials at annealing temperature 450-550 °C. The crystal phase was measured by X-ray diffraction (XRD) and showed tetragonal rutile structure with a preferential orientation of (110). Atomic force microscope (AFM) and Scanning Electron Microscope (SEM) images revealed the homogeneous grains distribution, and SEM images showed the obvious rectangular objects corresponding to tetragonal structure. Optical properties were observed by the transmittance in ultraviolet-visible (UV-Vis) region and optical energy gap, which revealed the transmittance over 75% and energy gap between 3.84 eV and 3.89 eV. Finally, I-V characteristics were tested to research electrical properties, and found the gradual non-linear property and the increase of resistance.

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