Al2O3 Obtained through Resistive Evaporation for Use as Insulating Layer in Transparent Field Effect Transistor

2014 ◽  
Vol 975 ◽  
pp. 248-253 ◽  
Author(s):  
Miguel Henrique Boratto ◽  
Luis Vicente de Andrade Scalvi ◽  
Diego Henrique de Oliveira Machado
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Insulating Layer ◽  
X Ray ◽  
Effect Transistor ◽  
Good Agreement

Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

scholarly journals Morphology and Field-Effect-Transistor Mobility in Tetracene Thin Films

2005 ◽  
Vol 15 (3) ◽  
pp. 375-380 ◽  
Author(s):  
F. Cicoira ◽  
C. Santato ◽  
F. Dinelli ◽  
M. Murgia ◽  
M. A. Loi ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

scholarly journals Piezoelectric Pb(Zr0.52Ti0.48)O3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

2010 ◽  
Vol 107 (2) ◽  
pp. 024101 ◽  
Author(s):  
Meiyong Liao ◽  
Yasuhito Gotoh ◽  
Hiroshi Tsuji ◽  
Kiyomi Nakajima ◽  
Masataka Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Crystal Diamond ◽  
Effect Transistor

Sub-micron field-effect transistor using granular NbN thin films

1993 ◽  
Vol 3 (1) ◽  
pp. 1987-1990 ◽  
Author(s):  
L. Zhang ◽  
N. Yoshikawa ◽  
M. Sugahara
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Influence of Deposition Time and Source-Substrate Distance on Properties of CdTe Thin Films Using Close-Spaced Sublimation at Higher Source Temperature

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Near Infrared ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray ◽  
Source Temperature ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Cdte Thin Films

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.

Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

2013 ◽  
Vol 15 (47) ◽  
pp. 20611 ◽  
Author(s):  
Ritsuko Eguchi ◽  
Xuexia He ◽  
Shino Hamao ◽  
Hidenori Goto ◽  
Hideki Okamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Effect Transistor
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