A Novel Comprehensive Draw-Out Power Circuit of High Voltage Thyristor

2014 ◽  
Vol 986-987 ◽  
pp. 1901-1905
Author(s):  
Yu Tian ◽  
Zhong Dong Yin
Keyword(s):  
Working Conditions ◽  
High Voltage ◽  
High Heat ◽  
Coordination Control ◽  
Power Module ◽  
Power Circuit ◽  
Self Energy ◽  
Variation Range ◽  
Almost All ◽  
Thyristor Device

The method of self-energy extracting has been adopted in high voltage thyristor device more and more widely. In consequence of the existing insufficient of high heat loss and large variation range of storage voltage value, this paper designs a novel comprehensive draw-out power circuit which is suitable for almost all kinds of working conditions of thyristor. The circuit includes voltage draw-out power module, current draw-out power module and the coordination control module between them. The principle of each module has been detailed analyzed and the calculation formulas of the corresponding parameters have been concisely given. At last, every conclusion drawn in this paper has been verified in simulation.

An Analysis of On-Bord High-Voltage Converters of Single-Phase Alternating Current with Increased Miroelectric Power Factor

2020 ◽  
Vol 10 (10) ◽  
pp. 44-51
Author(s):  
Yury Yu. SKOROKHOD ◽  
◽  
Sehgey I. VOL’SKIY ◽  
Keyword(s):  
High Voltage ◽  
Single Phase ◽  
Input Current ◽  
Voltage Converter ◽  
Input Unit ◽  
Power Circuit ◽  
Electrical Systems ◽  
Static Converters ◽  
Technical Requirements

The power circuit arrangements of on-board high-voltage static converters fed from a 3000 V AC single-phase network that in the general case produce multi-channel AC and DC output voltages are considered. The basic technical requirements posed to such converters are formulated. The general structural diagram of high-voltage converters with improved electric power consumption quality is given. Possible power circuit arrangements for the high-voltage converter input unit based on single-phase input current correction devices are considered. A classification and criteria for comparative evaluation of the possible power circuit arrangements of these devices are proposed. The information presented in the article will be of interest for specialists engaged in designing on-board electrical systems involving high-voltage converters that must comply with strict requirements for the quality of consumed single-phase input current.

Original design of field grading materials for high voltage power module applications

2020 ◽  
Author(s):  
Trong Trung Le ◽  
Zarel Valdez-Nava ◽  
Guillaume Belijar ◽  
Sombel Diaham ◽  
Lionel Laudebat ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Module ◽  
Original Design

Space High Voltage Power Module Design

2020 ◽  
Author(s):  
Zhao Wen-jie ◽  
Wan Cheng-an ◽  
Gao Yi-fei ◽  
Zhang Guo-shuai ◽  
Zheng Yan ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Module ◽  
Module Design

Selecting the Switching Frequency of the 6500 V IGBT High Voltage DC Converter

2021 ◽  
pp. 21-27
Author(s):  
Sergey I. Volskiy ◽  
◽  
Yuri Yu. SKOROKHOD ◽  
Nikolay Echkilev ◽  
◽  
...  
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Electrical Energy ◽  
Input Voltage ◽  
Switching Frequency ◽  
Energy Transformation ◽  
Power Losses ◽  
Voltage Converter ◽  
Passenger Cars ◽  
Power Circuit

The high-voltage converter with the input voltage of 3000 V DC is considered for use as a power supply for auxiliary circuits of commuter electric trains and passenger cars that are used on Russian railways. The limitations on the use of semiconductor devices in converters with an input voltage of 3000 V are shown. The power electrical circuits of the input units of the considered high-voltage converters are shown when using of 1700 and 6500 V IGBT. The expressions for calculating the power losses and the algorithm for selecting the switching frequency of 6500 in IGBT are given. This article is of interest to developers of high-voltage DC converters with an input voltage of 3000 V and higher, which choose IGBT for the power circuit of input units with using the high frequency principle of the electrical energy transformation.

A Robust, Composite Packaging Approach for a High Voltage 6.5kV IGBT and Series Diode

2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  
Keyword(s):  
High Voltage ◽  
Thermal Stresses ◽  
Wide Bandgap ◽  
Power Module ◽  
Cost Performance ◽  
Power Semiconductor ◽  
Current Switch ◽  
Power Modules ◽  
Voltage Stress ◽  
3D Printed

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.

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