Estimation of Li-Ion Diffusion Coefficients in C60 Coated Si Thin Film Anodes Using Electrochemical Techniques

2012 ◽  
Vol 326-328 ◽  
pp. 87-92 ◽  
Author(s):  
Arenst Andreas Arie ◽  
Joong Kee Lee
Keyword(s):  
Thin Films ◽  
Diffusion Coefficients ◽  
Electrochemical Impedance ◽  
Silicon Film ◽  
Electrochemical Techniques ◽  
Lithium Ion ◽  
Chemical Vapor ◽  
Film Coating ◽  
Kinetic Properties ◽  
Silicon Thin Films

C60coated Si thin films were prepared sequentially by a plasma enhanced chemical vapor deposition and a plasma assisted thermal evaporation technique. The films were then utilized as anode materials for lithium ion batteries. The diffusion coefficients of Li-ions in the film electrodes were then estimated by typical electrochemical techniques such as cyclic voltammetry and electrochemical impedance spectroscopy. The diffusion coefficients determined by both methods were found to be consistent each other. The diffusion coefficient of coated samples was obviously higher than that of bare silicon thin films, indicated that the kinetic properties of lithium ion transport in silicon film electrodes were enhanced by the C60film coating on its surface.

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

scholarly journals PEO Infiltration of Porous Garnet-Type Lithium-Conducting Solid Electrolyte Thin Films

Ceramics ◽  
2021 ◽  
Vol 4 (3) ◽  
pp. 421-436
Author(s):  
Aamir Iqbal Waidha ◽  
Vanita Vanita ◽  
Oliver Clemens
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Ionic Conductivity ◽  
Electrochemical Impedance ◽  
Three Dimensional ◽  
Lithium Ion ◽  
Interfacial Resistance ◽  
Composite Electrolytes ◽  
Ion Conducting ◽  
Polymer Infiltration

Composite electrolytes containing lithium ion conducting polymer matrix and ceramic filler are promising solid-state electrolytes for all solid-state lithium ion batteries due to their wide electrochemical stability window, high lithium ion conductivity and low electrode/electrolyte interfacial resistance. In this study, we report on the polymer infiltration of porous thin films of aluminum-doped cubic garnet fabricated via a combination of nebulized spray pyrolysis and spin coating with subsequent post annealing at 1173 K. This method offers a simple and easy route for the fabrication of a three-dimensional porous garnet network with a thickness in the range of 50 to 100 µm, which could be used as the ceramic backbone providing a continuous pathway for lithium ion transport in composite electrolytes. The porous microstructure of the fabricated thin films is confirmed via scanning electron microscopy. Ionic conductivity of the pristine films is determined via electrochemical impedance spectroscopy. We show that annealing times have a significant impact on the ionic conductivity of the films. The subsequent polymer infiltration of the porous garnet films shows a maximum ionic conductivity of 5.3 × 10−7 S cm−1 at 298 K, which is six orders of magnitude higher than the pristine porous garnet film.

Internal Stress Change of Phosphorus-Doped Amorphous Silicon Thin Films During Crystallization

1994 ◽  
Vol 343 ◽  
Author(s):  
Hideo Miura ◽  
Asao Nishimura
Keyword(s):  
Thin Films ◽  
Tensile Stress ◽  
Internal Stress ◽  
Crystallization Process ◽  
Chemical Vapor ◽  
Stress Change ◽  
Silicon Thin Films ◽  
Stress Changes ◽  
Phosphorus Doped ◽  
Deposited Films

ABSTRACTInternal stress change of phosphorus-doped silicon thin films during crystallization is measured by detecting substrate curvature change using a scanning laser microscope. The films are deposited in an amorphous phase by chemical vapor deposition using Si2H6 gas. The deposited films have compressive stress of about 200 MPa. The internal stress changes significantly to a tensile stress of about 800 MPa at about 600 °C due to shrinkage of the films during crystallization. The high tensile stress can be relaxed by annealing above 800 °C. The phosphorus doping changes the crystallization process of the films and their final residual stress.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

Porous silicon thin films as anodes for lithium ion batteries deposited by co-evaporation of silicon and zinc

2019 ◽  
Vol 358 ◽  
pp. 586-593 ◽  
Author(s):  
Stefan Saager ◽  
Bert Scheffel ◽  
Olaf Zywitzki ◽  
Thomas Modes ◽  
Markus Piwko ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Lithium Ion Batteries ◽  
Lithium Ion ◽  
Silicon Thin Films

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

2009 ◽  
Vol 1153 ◽  
Author(s):  
Yuri Vygranenko ◽  
Ehsanollah Fathi ◽  
Andrei Sazonov ◽  
Manuela Vieira ◽  
Gregory Heiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Percolation Cluster ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Silicon Thin Films ◽  
Low Leakage ◽  
In Doping ◽  
P Type

AbstractWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhanced p-i-n photodiode with an nc-Si p-layer was also fabricated and characterized.

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