Thermal Stability of Nickel Silicide Films
Keyword(s):
Ex Situ
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AbstractIn view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness.
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