Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 506-509
Author(s):  
Chia Cheng Huang ◽  
Fang Hsing Wang ◽  
Cheng Fu Yang ◽  
Hong Hsin Huang ◽  
Cheng Yi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Structure Morphology ◽  
Layer Thin Film

W-TiO2 (W, tungsten) dual-layer thin films are deposited by RF magnetron sputtering onto glass substrates and annealed at 150oC~400oC for 4hrs. The crystal structure, morphology, and trans- mittance of annealed W-TiO2 dual-layer thin films are investigated by X-ray diffraction, FESEM, and UV-Vis spectrometer, respectively. The annealing temperatures have large effect on the properties of W-TiO2 dual-layer thin films. The band gap energy values of W-TiO2 dual-layer thin films are evaluated from (h)1/2 versus energy plots. The energy gap for un-annealed W-TiO2 dual-layer thin film is 3.16 eV. As the annealing temperature increases from 150oC to 400oC, the energy gap decreases from 3.16 eV to 3.10 eV.

Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Hiroki Ishizaki ◽  
Keiichiro Yamada ◽  
Ryouta Arai ◽  
Yasuyuki Kuromiya ◽  
Yukari Masatsugu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rietveld Analysis ◽  
Atomic Ratio ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Crystallographic Property ◽  
Chalcopyrite Compound

AbstractAgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

scholarly journals Impact of ZnO Atomic Ratio on Structural, Morphological and Some Optical Properties of (SnO2)1-x (ZnO)x Thin Films

2020 ◽  
pp. 333-340
Author(s):  
Donia Yas Khudair ◽  
Ramiz Ahmed Al Ansari
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Atomic Force ◽  
Uv Visible ◽  
Longitudinal Structures

In this work, SnO2 and (SnO2)1-x(ZnO)x composite thin films with different ZnO atomic ratios (x=0, 5, 10, 15 and 20%) were prepared by pulsed laser deposition technique on clean glass substrates at room temperature without any treatment. The deposited thin films were characterized by x-ray diffraction atomic force microscope  and UV-visible spectrophotometer to study the effect of the ZnO atomic ratio on their structural, morphological and optical properties. It was found that the crystallinety and the crystalline size vary according to ZnO atomic ratio. The surface appeared as longitudinal structures which was convert to spherical shapes with increasing ZnO atomic ratio. The optical transmission and energy gap increased with increasing ZnO atomic ratio. 

SPECTROSCOPIC ELLIPSOMETRIC STUDIES ON THE OPTICAL PROPERTIES OF PHOSPHORUS DOPED NANOCRYSTALLINE NiO THIN FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 985-988 ◽  
Author(s):  
N. S. DAS ◽  
K. K. CHATTOPADHYAY ◽  
B. SAHA ◽  
R. THAPA
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Rf Magnetron Sputtering ◽  
Suitable Model ◽  
X Ray Diffraction ◽  
Phosphorus Doping ◽  
X Ray ◽  
Glass Substrates ◽  
Increase With Increase ◽  
Phosphorus Doped

Undoped and phosphorus doped nanocrystalline nickel oxide thin films have been synthesized on silicon and glass substrates by RF magnetron sputtering technique in pure Ar atmosphere. Proper phase formation was confirmed by X-ray diffraction analysis. Energy band gaps were determined using UV-Vis spectra. Formation of NiO nanoparticle of dimension ~15 nm was confirmed using HRTEM. Doping of phosphorus as an impurity was confirmed from EDX spectra and XPS studies. Spectroscopic ellipsometric studies were performed on such films and the spectra were analyzed with a suitable model. Optical constants were determined and refractive indices were found to increase with increase of phosphorus doping percentages.

INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OF In/Se LAYERED STRUCTURE

2013 ◽  
Vol 20 (06) ◽  
pp. 1350058 ◽  
Author(s):  
R. E. ORNELAS-ACOSTA ◽  
S. SHAJI ◽  
D. AVELLANEDA ◽  
G. A. CASTILLO ◽  
T. K. DAS ROY ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Irradiation ◽  
Layered Structure ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structure Morphology ◽  
532 Nm

In this work, we report the formation of In 6 Se 7 thin films by laser irradiation of In / Se layered structure. Indium layer was deposited on glass substrates by thermal evaporation on which selenium thin film was grown by chemical bath deposition from an aqueous solution containing 10 ml of sodium selenosulphate (0.1 M), 1.0 ml acetic acid (25%) and 70 ml distilled water during 5 min. The In / Se coated glass substrates were irradiated using a 532 nm continuous laser for 3–5 min. Structure, morphology, optical and electrical properties of the irradiated thin films were analyzed using various techniques. X-ray diffraction analysis showed that the irradiated thin films were In 6 Se 7 of monoclinic structure. X-ray photoelectron spectroscopic study on the laser irradiated samples provided uniform relative composition of In and Se in the thin films formed after laser irradiation. The morphology, optical and electrical properties of the irradiated samples were investigated. The optical band gap of the In 6 Se 7 thin films was 2.2 eV and also, the thin films were photoconductive.

InSe Nanothin Film with Ar-Gas Low Vacuum Pressure

2014 ◽  
Vol 606 ◽  
pp. 15-18
Author(s):  
Falah I. Mustafa ◽  
Mooroj Ali
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Room Temperature ◽  
Energy Gap ◽  
X Ray Diffraction ◽  
Argon Gas ◽  
X Ray ◽  
Glass Substrates ◽  
Deposited Film ◽  
Deposited Films

InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In2Se3and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In3Se2is polycrystalline and the values of energy gap are Eg=1.44eV for In2Se3, Eg=1.16eV for InSe and Eg=0.78eV for In3Se2. The same technique used with insert Argon gas at pressure 0.1 mbar where InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In2Se3are amorphous in nature while the as-deposited film InSe and In3Se2are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are Eg=1.55eV for InSe and Eg=1.28eV for In3Se2. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

scholarly journals Temperature effect on structural and optical properties of V2O5 thin films prepared by spray pyrolysis technique

2020 ◽  
Vol 307 ◽  
pp. 01033
Author(s):  
Asmaa Mrigal ◽  
Lahocine El Gana ◽  
Mouhamed Addou ◽  
Khadija Bahedi ◽  
Rajae Temsamani ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Energy Gap ◽  
Spray Pyrolysis Technique ◽  
Three Dimensional ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Optical Dielectric Constant

In this work, the effect of substrate temperature on structural and optical properties of V2O5 thin films has been characterized by X-ray diffraction (XRD); SEM and transmission. The films mince has been prepared by Reactive Chemical Spraying technology in Liquid Phase (RCSLP) on glass substrates preheated at (350, 400, 450 and 500 °C). The X-ray diffraction analysis confirms that all layers are polycrystalline, and the preferred orientation of V2O5 is the (001) plane. The morphology of V2O5 thin films are porous nature and their particle’s shape is three-dimensional. The transmittance and absorbance of thin film were measured from which the optical constants (Energy gap, Refractive index, Absorption coefficient, Extinction coefficient and Optical dielectric constant) were determined.

Effects of Annealing Temperature on Optical Properties of Bi3.4Nd0.6Ti3O12 Films by RF Magnetron Sputtering Method

2012 ◽  
Vol 503-504 ◽  
pp. 620-624
Author(s):  
Yan Zou ◽  
Qiu Xiang Liu ◽  
Yan Ping Jiang ◽  
Xin Gui Tang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures

Bi3.4Nd0.6Ti3O12 (BNT) thin films have been prepared on Si (100) substrate by RF magnetron sputtering method. The crystalline structures were studied by X-ray diffraction. The surface of the films have been observed by SEM. The reflectivity was measured by n & k Analyzer 2000 with the wavelength from 190 to 900 nm. The optical constant, thickness and the forbidden band gap were fitted. The results showed that with the annealing temperatures raised from 600 to 750 °C, the reflectivity index decreased from 2.224 to 2.039, and the forbidden band gap decreased from 3.19 to 2.99 eV. The possible mechanism of the effect of annealing temperature on the optical properties was discussed.

scholarly journals INFLUENCE OF ANNEALING TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF COPPER IODIDE THIN FILMS

2021 ◽  
Vol 03 (02) ◽  
pp. 100-108
Author(s):  
Zuheer. N MAJEED ◽  
Nadia Naeema DAHAHER ◽  
Ebtisam K ALWAN
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Target Surface ◽  
Optical Measurements ◽  
Cubic Phase ◽  
Copper Iodide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures

Copper Iodide (CuI) nanoparticles with (250 nm) thickness have been prepared at RT on glass substrate using PLD technique with focused Nd:YAG laser beam at (800 mJ) with a frequency second radiation at (1064 nm) (pulse width 9 ns) repetition frequency (6 Hz), for 500 laser pulses incident on the target surface . The films annealed to different annealing temperatures (423K )and(523K). The structural and surface morphology properties of the deposited CuI thin films were examined by X-ray diffraction analysis (XRD) and Atomic force microscope (AFM). The X-ray diffraction show that structure is a cubic phase with (111) plane preferential orientation direction. AFM was used to examine and measure the morphology and average diameter for CuI thin films respectively. It is observed that the average nanoparticles size increases with increasing of annealing temperature. The optical measurements showed that CuI thin films have direct allowed energy gap transition and the energy gap (Eg) decreases from (3.2eV) to (2.8 eV) with increasing annealing temperatures from RT to (532 K) for all samples.

scholarly journals Structural, electrical and optical properties of CdS thin films and the effect of annealing on photoconductivity

2019 ◽  
Vol 12 (25) ◽  
pp. 138-147
Author(s):  
Haidar Jwad Abdul-Ameer Al-Rehamey
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Semiconductor ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the samples was determined from optical trasmittance spectra. It is observed that the direct band gap energy for as deposited and annealed films are (2.55, 2.45) eV, respectively. The effect of annealing at 250 oC for 1hr in air on optical and photoconductivity of films under various intensity of illuminations (43.81 and 115.12) mW/cm2 was studied. The dark and photocurrents of the annealed films were found to be greater than that of as deposited.

scholarly journals Study of the optical proprieties of copper oxide nanoparticles prepared by PLD method

2019 ◽  
Vol 23 (10) ◽  
pp. 72
Author(s):  
Rasha H. Ahmed1 ◽  
, Abdul Majeed E. Ibrahim1 ◽  
Kadhim A. Aadem2
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Optical Transmittance ◽  
Copper Oxide Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Thin Flims ◽  
Optical Proprieties ◽  
Absorption Measurements

Nano CuO thin films on glass substrates were prepared at a constant temperature of (300°C), by pulsed laser deposition (PLD) using Nd:YAG laser at 1064 nm wavelength and five deposition energies (400, 500, 600, 700 and 800 mJ) with fixed pulses (300 pulse and 6 Hz) was used on the properties of CuO films. CuO nanoparticles were deposited on glass substrates to study optical properties and formed thin films of thickness (200 nm).CuO thin flims were characterized by X-ray diffraction (XRD) measurements have shown that the polycrystalline CuO prepared at laser energies , includes optical transmittance and absorption measurements and energy gap of these films.   http://dx.doi.org/10.25130/tjps.23.2018.172    

Sign in / Sign up

Export Citation Format

Share Document