scholarly journals Structural, electrical and optical properties of CdS thin films and the effect of annealing on photoconductivity

2019 ◽  
Vol 12 (25) ◽  
pp. 138-147
Author(s):  
Haidar Jwad Abdul-Ameer Al-Rehamey
Keyword(s):  
Thin Films ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Type Semiconductor ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the samples was determined from optical trasmittance spectra. It is observed that the direct band gap energy for as deposited and annealed films are (2.55, 2.45) eV, respectively. The effect of annealing at 250 oC for 1hr in air on optical and photoconductivity of films under various intensity of illuminations (43.81 and 115.12) mW/cm2 was studied. The dark and photocurrents of the annealed films were found to be greater than that of as deposited.

Structural and Optical Properties of CdS Thin Films Grown by Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 265-268
Author(s):  
Xue Yan Zhang ◽  
Xiao Yu Liu ◽  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Range ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Grain Sizes ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films with (111) preferential orientation were grown on glass substrates at room temperature by radio frequency (R.F.) magnetron sputtering. The structural and optical properties of CdS films have been investigated by X-ray diffraction, Scanning Electron Microscope micrographs, PL spectra and transmittance spectra. The grain sizes have been evaluated. The transmission spectra of the obtained films reveal a relatively high transmission coefficient (80%) in the visible range. All these results show that the grain sizes increased while the optical band gap decreased with increasing the thickness of CdS films.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

Chemical Bath Deposition of CdS Thin Films: Growth and Structural Studies

1996 ◽  
Vol 426 ◽  
Author(s):  
Yuming Zhu ◽  
Dull Mao ◽  
D. L. Williamson ◽  
J. U. Trefny
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Deposition Time ◽  
Layer Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thiourea Solution ◽  
Cds Thin Films ◽  
Cds Films

AbstractChemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.

Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Hiroki Ishizaki ◽  
Keiichiro Yamada ◽  
Ryouta Arai ◽  
Yasuyuki Kuromiya ◽  
Yukari Masatsugu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rietveld Analysis ◽  
Atomic Ratio ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Crystallographic Property ◽  
Chalcopyrite Compound

AbstractAgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

scholarly journals Effect some Factors on the Structural Properties of the CdS Thin Films Prepared by Chemical Bath Deposition

2016 ◽  
Vol 64 ◽  
pp. 1-10
Author(s):  
Fatma Salamon
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Temperature Deposition ◽  
Xrd Patterns

CdS thin films were prepared by chemical bath deposition technique (CBD) onto the glass substrates at different conditions of preparation. The obtained samples are studied by X-Ray diffraction (XRD). The XRD patterns of CdS samples revealed the formation with a hexagonal crystal structure P36mc, and the clear effect of the concentration of thiourea, cadmium sulfide, NaOH, time and temperature deposition, and annealing temperature, on the structure of the prepared thin films. through the study, we found that the samples have preferred orientation along [002], also the thickness of thin films decrease with deposition time after certain value, with the appearance of free cadmium. It has been found that the 200°C is the best temperature for annealing to improve the other structural and physical properties of films.

STRUCTURAL, OPTICAL, AND ELECTRICAL CHARACTERIZATION OF SPRAY PYROLYSED INDIUM SULFIDE THIN FILMS

2013 ◽  
Vol 20 (02) ◽  
pp. 1350014 ◽  
Author(s):  
F. RAHMAN ◽  
J. PODDER ◽  
M. ICHIMURA
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Low Cost ◽  
Electrical Characterization ◽  
Optical Transmittance ◽  
Band Gap Energy ◽  
Indium Sulfide ◽  
X Ray Diffraction ◽  
Indium Chloride ◽  
Glass Substrates

Indium sulfide (In2S3) thin films were deposited onto the glass substrates by a low cost simple spray pyrolysis technique at 300°C temperature. Aqueous solution of indium chloride and thiourea were used to deposit the binary In-S film. The deposited thin films were annealed at 400° and 500°C temperatures and characterized structurally, optically and electrically using EDX, X-ray diffraction, UV-visible spectroscopy and four probe van der Pauw methods. The optical constants such as refractive index and extinction coefficient are calculated from absorbance and transmittance data from 300 to 1100 nm wavelength. The optical transmittance increased after annealing at 400° and 500°C. The band gap energy was reduced from 2.90 to 2.50 eV after annealing the as deposited films. The electrical conductivity as well as the activation energy was increased after annealing the samples.

scholarly journals Copper Incorporation into CdS Thin Films by Ionic Exchange in an Aqueous Solution Process at Room Temperature

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
E. Flores-García ◽  
M. A. Hernández-Landaverde ◽  
P. González-García ◽  
R. Ramírez-Bon
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Solution Process ◽  
Deposition Process ◽  
Hexagonal Structure ◽  
Ionic Exchange ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Cds Films

Cadmium sulfide (CdS) thin films were deposited, on glass substrates, at 70°C for 120 min using an ammonium-free chemical bath deposition process. After deposition, the films were placed in a CuCl2 solution for 45, 60, 75, and 90 min, respectively, for their ion exchange, generating CdxCu1-xS films. The obtained films were analyzed by X-ray diffraction, Raman spectroscopy, X-ray wavelength dispersion spectrometry, and scanning electron microscopy. The reference CdS films showed a homogeneous appearance and a yellowish color; elapsing the immersion time, the films changed their color showing a greenish appearance. The X-ray analysis indicated that the CdS films developed a hexagonal structure with preferential orientation along the plane (002). During the ion exchange, a decrease in the intensity of the reflection (002) was observed as well as a slight displacement of this reflection towards higher values of 2θ derived from the substitution of Cd atoms by Cu atoms. The WDS analysis revealed that approximately 10% of the cadmium atoms were replaced by copper ones after 90 min of immersion.

Effects of Vapor CdCl2 Treatment on the Properties of CdS Thin Films Prepared by R.F. Magnetron Sputtering

2011 ◽  
Vol 347-353 ◽  
pp. 3477-3480
Author(s):  
Liang Min Cai ◽  
Jian Huang ◽  
Jia Wei Jiang ◽  
Jun Le ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Solar Cell Application ◽  
X Ray ◽  
Cds Thin Films ◽  
Cds Films

CdS films were prepared by R.F. magnetron sputtering method. The effects of vapor CdCl2treatment on the properties of CdS films were studied. The vapor CdCl2thermal treatment at different temperature was employed in a CSS device, using CdCl2powder as evaporant. The structural and optical properties of CdS films were investigated by x-ray diffraction (XRD), PL spectra, and transmittance spectra, respectively. The results revealed that the CdS films had a structure of hexagonal wurtzite with a preferential orientation of the (002) plane. A better crystal quality and larger grain size, which are good for the solar cell application, were observed in the CdS samples annealed with CdCl2Subscript text.

scholarly journals Structural, Optical and Electrical Properties of Thin Films Using Nebulizer Spray Pyrolysis Technique

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
R. Mariappan ◽  
V. Ponnuswamy ◽  
P. Jayamurugan ◽  
R. N. Jayaprakash ◽  
R. Suresh
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Optical Transmittance ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
X Ray ◽  
Average Grain Size ◽  
Nebulizer Spray Pyrolysis ◽  
Nebulizer Spray

thin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD) analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM) studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX) reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.

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