Ternary Phase Relation on Preparation of YBa2Cu3O7-δ Films by Laser CVD

2011 ◽  
Vol 484 ◽  
pp. 183-187 ◽  
Author(s):  
Pei Zhao ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Ternary Phase ◽  
Single Phase ◽  
Continuous Wave ◽  
Ybco Film ◽  
Ternary Phase Diagram ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Evaporation Temperature ◽  
Second Phases ◽  
Laser Cvd

c-axis-oriented YBa2Cu3O7- films were prepared by laser chemical vapor deposition (laser CVD) using Y(DPM)3, Ba(DPM)2/Ba(TMOD)2 and Cu(DPM)2 as precursors with enhancement by a continuous wave Nd:YAG laser. YBa2Cu3O7- film almost in a single phase and that with different second phases of BaCuO2, CuBaO2, BaY2O4, CuYO2, Y2O3 and CuO were obtained by varying evaporation temperature of precursors. Ternary phase diagram as a function of evaporation amount of three precursors were obtained. The deposition rate of the c-axis-oriented YBCO film was 60 µmh-1, about 60–600 times higher than those of conventional CVD.

Effect of Precursor Supply on (100) and (001) Orientations of α-Al2O3 Film Prepared by Laser CVD

2012 ◽  
Vol 508 ◽  
pp. 3-6 ◽  
Author(s):  
Kadokura Hokuto ◽  
Akihiko Ito ◽  
Teiichi Kimura ◽  
Takashi Goto
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gas Flow Rate ◽  
Laser Chemical Vapor Deposition ◽  
Evaporation Temperature ◽  
Oxygen Gas ◽  
Laser Cvd ◽  
Precursor Supply

Α-Al2O3 Films Were Prepared by Laser Chemical Vapor Deposition and the Effects of Precursor Evaporation Temperature (Tvap) and Oxygen Gas Flow Rate (FRo) on Phase and Orientation of Al2o3 Films Were Investigated. at Tvap = 413 K, (100)-Oriented α-Al2O3 and θ-Al2O3 Were Codeposited. the Amount of θ-Al2O3 Increased with Increasing FRo. at Tvap = 433–443 K, α-Al2O3 Films Showed a (001) Orientation. (100)- and (001)-Oriented α-Al2O3 Films Had a Rectangular- and Hexagonal-Shaped Grains, Respectively, and Showed a Columnar in Cross Section. Grain Size of (100)- and (001)-Oriented α-Al2O3 Films Decreased from 10 to 2 μm with Increasing FRo from 0.085 to 0.85 Pa m3 s−1. Deposition Rate Increased from 100 to 300 μm h−1 with Increasing Tvap from 413 to 443 K.

Preparation of c-Axis-Oriented Y2Ba4Cu7O15-δ Films by Laser CVD with Ultrasonically Nebulized Precursor

2012 ◽  
Vol 508 ◽  
pp. 207-210
Author(s):  
Akihiko Ito ◽  
Mitsutaka Sato ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Single Phase ◽  
Chemical Vapor ◽  
Precursor Concentration ◽  
Laser Chemical Vapor Deposition ◽  
Axis Orientation ◽  
Liquid Precursor ◽  
Laser Cvd

C-Axis-Oriented Y2Ba4Cu7O15-δ (Y247) Films Were Prepared on Multilayer-Coated Hasterolly Tape Substrate by Laser Chemical Vapor Deposition with Ultrasonically Nebulized Liquid Precursor. At a Low Precursor Concentration of 0.01 mol l−1 and Deposition Temperature of 933 K, Single-Phase Y247 Film with Significant c-Axis Orientation Was Obtained. At a Precursor Concentration of 0.1 mol l−1 and Deposition Temperature 983 K, a-Axis-Oriented YBa2Cu3O7-δ (Y123) Was Codeposited with C-Axis Oriented Y247 Film.

Microstructure of LiAl5O8 and LiAlO2 Films Prepared by Laser CVD

2014 ◽  
Vol 616 ◽  
pp. 223-226
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Vapor Deposition ◽  
Total Pressure ◽  
Single Phase ◽  
Composite Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Deposition Rates ◽  
Typical Morphology ◽  
Laser Cvd

α-LiAl5O8, γ-LiAlO2, α-Al2O3and those composite films were prepared on AlN polycrystalline substrates by laser chemical vapor deposition (LCVD), and the effects of total pressure (Ptot) and the molar ratio of Li to Al (RLi/Al) on the morphology and deposition rates were investigated. The typical morphology of single-phase γ-LiAlO2films prepared atRLi/Al> 1.0 andPtot> 400 Pa was granular, whereas γ-LiAlO2films prepared atPtot< 200 Pa and γ-LiAlO2-α-LiAl5O8composite films had pyramidal grains. Single-phase α-LiAl5O8films showed polygonally faceted morphologies. Composite films of α-LiAl5O8and α-Al2O3consisted of carifllower-like and faceted grains. A single-phase γ-LiAlO2film deposited at 200 Pa showed the maximum deposition rate of 48 μm h-1.

Ba2TiO4 and Ba4Ti13O30 Thick Films Prepared by Laser Chemical Vapor Deposition and their Microstructure

2012 ◽  
Vol 508 ◽  
pp. 199-202
Author(s):  
Dong Yun Guo ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Thick Films ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Columnar Growth ◽  
Deposition Rates

Ba2TiO4 and Ba4Ti13O30 Thick Films Were Prepared by Laser Chemical Vapor Deposition Using Ba- and Ti-Dipivaloylmethanate Precursors. Single-Phase Ba2TiO4 Thick Films Were Obtained at 845–946 K and Ba/Ti Source Molar Ratio 2.4. Single-Phase Ba4Ti13O30 Films Were Obtained at 944–1011 K and Ba/Ti Source Molar Ratio 0.38. Ba2TiO4 Thick Films Consisted of Truncated Grains, while Ba4ti13o30 Thick Films Had Shellfish-Like Grains. Ba2TiO4 and Ba4Ti13O30 Thick Films Showed a Columnar Growth and their Deposition Rates Were 72 and 132 μm h−1, Respectively.

Preparation of Stoichiometric TiNx Films by Laser CVD with Metalorganic Precursor

2011 ◽  
Vol 239-242 ◽  
pp. 318-321
Author(s):  
Yan Sheng Gong ◽  
Wei Zhou ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Section ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Laser Power ◽  
Single Phase ◽  
Heating Temperature ◽  
Chemical Vapor ◽  
Laser Cvd ◽  
Source Materials

Nearly stoichiometric TiNxfilms were deposited on Al2O3substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power (PL) and pre-heating temperature (Tpre) on the composition and deposition rate of TiNxfilms. Single phase of TiNxfilms with columnar cross section were obtained. The ratio of N to Ti in TiNxfilms increased with increasingPLand was close to stoichiometric atPL> 150 W. The deposition rate of TiNxfilms with a depositing area of 300 mm2was about 18-90 µm/h, which decreased with increasingPLandTpre.

Laser-Induced Chemical Vapor Deposition of Silicon Nitride Films

1983 ◽  
Vol 29 ◽  
Author(s):  
Gary A. West ◽  
Arunava Gupta
Keyword(s):  
Silicon Nitride ◽  
Gas Flow ◽  
Silicon Oxide ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Gaseous Mixtures ◽  
Silicon Nitride Films ◽  
Film Content ◽  
Gas Flow Ratio ◽  
Laser Cvd

ABSTRACTFilms of silicon nitride have been deposited using a continuous wave CO2 laser to excite gaseous mixtures of silane and ammonia. A typical deposition rate is 150Å/min. The hydrogen film content and its dependence on the substrate deposition temperature are similar to that observed for plasma CVD silicon nitride. The CO2 laser CVD films are silicon rich with a Si/N ratio = 1.2 at a NH3/SiH4 gas flow ratio of 1000. Conformal step coverage is observed on patterned silicon oxide features.

Preparation of The Double-Sided YBa2Cu3O7-δ Thin Film by Hot-Wall Type Mocvd

1997 ◽  
Vol 474 ◽  
Author(s):  
Y. Ito ◽  
M. Iwata ◽  
Y. Yoshida ◽  
Y. Takai ◽  
I. Hirabayashi
Keyword(s):  
Gas Flow ◽  
Single Phase ◽  
Ybco Film ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Ybco Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Source Materials

ABSTRACTA hot-wall type metal organic chemical vapor deposition (MOCVD) apparatus has been developed for the deposition of the YBa2Cu3O7-δ (YBCO) films using liquid metal organic sources on arbitrary shaped substrates. By improving the reactor shape and gas flow of the source materials, we succeeded in fabricating the double-sided YBCO films for electronic and microwave devices and the YBCO-coated conductor on oxide fiber for power applications. Tc(zero)'s of the YBCO film on both sides of the LaAlO3 (100) substrate were 90K and 86K, respectively. The films on the facet of the single crystalline SrTiO3 fiber showed the single phase c-axis orientation with biaxially alignment in the a / b plane.

Isothermal Section of the Sn-Fe-Zn Ternary System at 270°C

2013 ◽  
Vol 284-287 ◽  
pp. 152-157
Author(s):  
Yee Wen Yen ◽  
Yu Pin Hsieh ◽  
Wan Ching Chen ◽  
Chien Chung Jao
Keyword(s):  
Isothermal Section ◽  
Ternary System ◽  
Ternary Phase ◽  
Single Phase ◽  
Ternary Phase Diagram ◽  
Electronic Industry ◽  
Two Phase ◽  
Rich Alloy ◽  
Ternary Intermetallic Compound ◽  
Zn Alloy

With a relatively low liquidus temperature, the eutectic Sn-Zn alloy is suitable replacement for conventional eutectic Sn-Pb solder in the electronic industry. One of the most important materials as a lead-frame is Fe-42Ni alloy (Alloy 42) in the microelectronic packaging. The Sn-Fe-Zn ternary phase diagram is a powerful and useful tool to understand the interfacial reactions between Sn-Zn alloy and Alloy 42 substrate (Fe-rich alloy). The isothermal section of the Sn-Fe-Zn ternary system was experimentally investigated at 270oC in this study. Ternary Sn-Fe-Zn alloys were prepared and annealed at 270 oC to determine the isothermal section of the Sn-Fe-Zn ternary system. The experimental results revealed that no ternary intermetallic compound was formed, and noticeable Zn solubility was observed in the FeSn2 phase. The isothermal section of the Sn-Fe-Zn ternary system consists of nine single-phase areas, thirteen two-phase areas, and seven tie-triangles at 270 oC

scholarly journals Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 155 ◽  
Author(s):  
Hang Wang ◽  
Ying Wang ◽  
Shuyan Gong ◽  
Xinyuan Zhou ◽  
Zaixing Yang ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Ternary Phase ◽  
Ternary Phase Diagram ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Visible Absorption ◽  
Residual Oxygen ◽  
Cmos Compatible

Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.

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