Study of Optical and Electrical Properties of Ag/ITO Multi-Layer Transparent Electrodes

2013 ◽  
Vol 552 ◽  
pp. 162-167
Author(s):  
Min Rui Wang ◽  
Bin Yu ◽  
Yu Xia Wang
Keyword(s):  
Contact Resistance ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Multilayer Films ◽  
Specific Contact Resistance ◽  
Optical And Electrical Properties ◽  
Ito Film ◽  
Current Voltage ◽  
Specific Contact

The samples of Ag/ITO multilayer films with different Ag insert layer thickness (0.5, 2, 4 nm) were prepared on sapphire and p-GaN substrates. The effects of the Ag layer thickness, annealing temperature and annealing time on the transmittance, sheet resistance and specific contact resistance of Ag/ITO films were investigated. The experiment results show that the transmittance is obviously affected by Ag insert layer thickness. The Current–voltage (I–V) measurements indicate that the sheet resistance and specific contact resistance of Ag/ITO film on p-GaN are lower than those of single ITO film. The samples with Ag(0.5nm)/ITO film on p-GaN produce the low specific contact resistance of ~1.386×10-4Ω•cm2 , low sheet resistance of ~11Ω/sq and high transmittance of ~ 90% at 455nm when the samples are annealed at 600°C for 10 minutes.

Electrical Properties of (Zn, Mn) Containing Multilayer Metallizations to p-Type InGaAs/InP

1995 ◽  
Vol 382 ◽  
Author(s):  
Patrick W. Leec ◽  
Geoffrey K. Reeves ◽  
Wei Zhou
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Layer Thickness ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
A Minor ◽  
P Type ◽  
Metal Layers

ABSTRACTThe specific contact resistance, pc, of Au/Zn/Au, Ni/Zn/Ni/Au, Pd/Zn/Pt/Au and Pd/Mln/Sb/Pd/Au contacts to p-In0.47Ga0.53As/ InP has been measured as a function of layer thickness of Zn or Mn. All of the as-deposited contacts were ohmic, with pc = 1−2 × 10−5 Ω cm2. Increasing thickness of the Zn layer above 200 Å in the Au/Zn/Au contacts resulted in a minor decrease in pc while producing no change in the Ni/Zn/Ni/Au metallization. For the as-deposited Pd/Mn/Pd/Au contacts, the value of pc was independent of thickness of the Mn layer but differences in pc emerged at annealing temperatures of ≥ 250°. The analysis of these structures by RBS has shown an extensive intermixing of the metal layers at an annealing temperature of 450 °. In the Pd/Zn/Pt/Au contacts, the value of pc was reduced to a minimum value of 8 × 10−6 Ω cm2 by annealing at a temperature of 500 °. An examination of the Pd/Zn/Pt/Au configuration by RBS has shown that the Pt layer acted as a barrier for the indiffusion of the Au.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 684-690
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

Sputter-deposited W-based contacts on p-GaN (NA∼1018 cm−3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

Dependence of the Au/Ni/Si/Ni Contact Properties on the Si-layer Thickness and the Annealing Temperature in p-type GaN Epilayers

2002 ◽  
Vol 17 (5) ◽  
pp. 1019-1023 ◽  
Author(s):  
S.J. Yang ◽  
T.W. Kang ◽  
T.W. Kim ◽  
K.S. Chung
Keyword(s):  
Layer Thickness ◽  
Annealing Temperature ◽  
Electron Beam Evaporation ◽  
Nitrogen Atmosphere ◽  
Specific Contact Resistance ◽  
X Ray Diffraction ◽  
Specific Contact ◽  
Potential Applications ◽  
Increasing Temperature ◽  
P Type

The dependences of the properties of Au/Ni/Si/Ni contacts, deposited on p-GaN epilayers by using electron-beam evaporation, on the Si layer thickness and the annealing temperature were investigated with the goal of producing contacts with low specific resistances. The results of the current–voltage (I–V) curves showed that the lowest specific contact resistance obtained for the Au/Ni/Si/Ni contact with a 1200-Å- thick Si layer on p-type GaN annealed at 700 °C for 1 min in a nitrogen atmosphere was 8.49 × 10-4 Ω cm2. The x-ray diffraction (XRD) measurements on the annealed Au/Ni/Si/Ni/p-GaN/sapphire heterostructure showed that Ni3Si, GaAu, and NiGa layers were formed at the Au/Ni/Si/Ni/p-GaN interfaces. While the intensities corresponding to the Ni3Si layer decreased with increasing annealing temperature above 700 °C, those related to the GaAu and the NiGa layers increased with increasing temperature. These results indicate that the Au/Ni/Si/Ni contacts with 1200-Å-thick Si layers annealed at 700 °C hold promise for potential applications in p-GaN-based optoelectronic devices.

scholarly journals Ohmic contacts to Si-implanted and un-implanted n-type GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
J. Brown ◽  
J Ramer ◽  
K. ZHeng ◽  
L.F. Lester ◽  
S.D. Hersee ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Contact Resistivity ◽  
Contact Structures ◽  
Specific Contact Resistance ◽  
Resistance Variation ◽  
Specific Contact ◽  
Metal Layers ◽  
Nitrogen Vacancies

ABSTRACTWe report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N2 at temperatures of 700, 800, and 900°C, A minimum specific contact resistance (rc) of 1.4×10−5 Ω-cm2 was measured for Ti/Al at an annealing temperature of 800°C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured within a 500 µm distance on the wafer. These results are most likely caused by the presence of compensating hydrogen. Specific contact resistance variation was reduced from 95% to 10% by annealing at 900°C prior to metalization. On Si-implanted GaN, un-annealed ohmic contacts were formed with Ti/Al metalization. The implant activation anneal of 1120°C generates nitrogen vacancies that leave the surface heavily n-type, which makes un-annealed ohmic contacts with low contact resistivity possible.

scholarly journals Behavior of W and WSix Contact Metallization on n- and p- Type GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
X. A. Cao ◽  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Specific Contact Resistance ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Specific Contact ◽  
Heavily Doped ◽  
Sputter Deposited ◽  
Optimum Annealing Temperature ◽  
P Type

AbstractSputter-deposited W-based contacts on p-GaN (NA∼1018cm-3) display non-ohmic behavior independent of annealing temperature when measured at 25°C. The transition to ohmic behavior occurs above ∼250°C as more of the acceptors become ionized. The optimum annealing temperature is ∼700°C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700°C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to ∼900°C.

scholarly journals Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

2013 ◽  
Vol 4 ◽  
pp. 234-242 ◽  
Author(s):  
Gabriele Fisichella ◽  
Salvatore Di Franco ◽  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Flexible Electronics ◽  
Structural Integrity ◽  
Chemical Vapour ◽  
Specific Contact Resistance ◽  
Large Area ◽  
Conductive Atomic Force Microscopy ◽  
Specific Contact

Chemical vapour deposition (CVD) on catalytic metals is one of main approaches for high-quality graphene growth over large areas. However, a subsequent transfer step to an insulating substrate is required in order to use the graphene for electronic applications. This step can severely affect both the structural integrity and the electronic properties of the graphene membrane. In this paper, we investigated the morphological and electrical properties of CVD graphene transferred onto SiO2 and on a polymeric substrate (poly(ethylene-2,6-naphthalene dicarboxylate), briefly PEN), suitable for microelectronics and flexible electronics applications, respectively. The electrical properties (sheet resistance, mobility, carrier density) of the transferred graphene as well as the specific contact resistance of metal contacts onto graphene were investigated by using properly designed test patterns. While a sheet resistance R sh ≈ 1.7 kΩ/sq and a specific contact resistance ρc ≈ 15 kΩ·μm have been measured for graphene transferred onto SiO2, about 2.3× higher R sh and about 8× higher ρc values were obtained for graphene on PEN. High-resolution current mapping by torsion resonant conductive atomic force microscopy (TRCAFM) provided an insight into the nanoscale mechanisms responsible for the very high ρc in the case of graphene on PEN, showing a ca. 10× smaller “effective” area for current injection than in the case of graphene on SiO2.

Characterization of the Al/RuO2 Interface Upon Thermal Annealing

1990 ◽  
Vol 181 ◽  
Author(s):  
Quat T. Vu ◽  
E. Kolawa ◽  
M-A. Nicolet
Keyword(s):  
Contact Resistance ◽  
Annealing Temperature ◽  
Electrical Measurement ◽  
Specific Contact Resistance ◽  
Annealing Duration ◽  
Type Model ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Specific Contact

ABSTRACTWe have characterized the Al/RuO2 interface after annealing at temperatures in the range 450° C-550° C for durations up to several hours by backscattering spectrometry, cross-sectional transmission electron microscopy, and electrical four point probe measurement of specially designed structures. The electrical measurement yields the specific contact resistance of the interface by applying a transmission line type model developped for this purpose. An interfacial aluminum-oxygen polycrystalline compound is shown to grow with annealing temperature and duration, with a concurrent reduction of a thin layer of RuO2. However, the specific contact resistance between Al and RuO2 is found to decrease with annealing duration at 500°C. This last result indicates that the interfacial reaction does not lead to an insulating interface as could have been expected if the growth were pure and dense A12O3.

scholarly journals Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 470
Author(s):  
Xiaolu Yuan ◽  
Jiangwei Liu ◽  
Jinlong Liu ◽  
Junjun Wei ◽  
Bo Da ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Annealing Temperature ◽  
Electronic Devices ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Specific Contact ◽  
Contact Electrode

Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic contact characteristics of Ni/H-diamond at annealing temperatures up to 900 °C are investigated. The measured current–voltage curves and deduced specific contact resistance (ρC) are used to evaluate the quality of the contact properties. Schottky contacts are formed for the as-received and 300 °C-annealed Ni/H-diamonds. When the annealing temperature is increased to 500 °C, the ohmic contact properties are formed with the ρC of 1.5 × 10−3 Ω·cm2 for the Ni/H-diamond. As the annealing temperature rises to 900 °C, the ρC is determined to be as low as 6.0 × 10−5 Ω·cm2. It is believed that the formation of Ni-related carbides at the Ni/H-diamond interface promotes the decrease in ρC. The Ni metal is extremely promising to be used as the ohmic contact electrode for the H-diamond-based electronic devices at temperature up to 900 °C.

Sign in / Sign up

Export Citation Format

Share Document