The Homogeneous Design of Large Area Film Hollow Cathode Plasma Graft Polymerization

2013 ◽  
Vol 567 ◽  
pp. 45-51
Author(s):  
Yi Fang Wen ◽  
Chuang Chen ◽  
Xin Chen ◽  
Yan Nian Rui ◽  
Ning Ding
Keyword(s):  
Thin Film ◽  
Hollow Cathode ◽  
Graft Polymerization ◽  
Technical Difficulty ◽  
Simulation Software ◽  
Material Surface ◽  
Optimized Design ◽  
Film Material ◽  
Large Area ◽  
Cathode Plasma

CRFHCP RF hollow cathode plasma graft polymerization has characteristics of discharge density, high discharging efficiency, good surface modification effect, discharge area and regional separation, applies to modify large area thin film material surface. The uniformity modifying large area plasma material surface is the technical difficulty related technical personnel has been concerned with, the key point restricting HCRFCP technology industrialization application too. This paper analyzes influence factors of the large area thin film materials plasma graft polymerization uniformity; applies simulation software and mathematical models; makes optimized design to the hollow cathode discharge electrodes and graft polymerization distributing pipe. The experiment proved, the uniformity processing large area battery diaphragm is better to apply the hollow cathode plasma graft polymerization, and is suitable for industrial application.

Finite Element Simulation on the Distribution of Discharge Gas in Hollow Cathode Plasma

2016 ◽  
Vol 693 ◽  
pp. 1054-1060
Author(s):  
Yi Fang Wen ◽  
Yan Nian Rui ◽  
Hong Wei Wang
Keyword(s):  
Thin Film ◽  
Finite Element ◽  
Surface Modification ◽  
Hollow Cathode ◽  
Fluid Distribution ◽  
Large Area ◽  
Cathode Plasma ◽  
Plasma Surface Modification ◽  
Plasma Surface ◽  
Discharge Gas

The graft polymerization in radio frequency hollow cathode plasma (RFHCP) is suitable for the surface modification of large-area thin film materials. The homogeneity of plasma surface modification of large-area thin film materials has always been paid close attention, and it is also the key factor affecting the industrialized applications of the technique. However, the homogeneity of plasma surface modification is thought to depend greatly on the distribution of discharge gas. In this paper, a finite element model is proposed to discuss the flow of discharge gas in hollow cathode plasma. The concentration distribution of the discharge gas has been discussed by the combination of numerical simulation of fluid distribution and pipe flow theory based on the investigation of the transport property of gas under vacuum. Comparisons between available experiments have also been performed to validate the applicability and practicability of the proposed model.

The Optimal Design of the Plasma Discharge Structure of the Far Zone of the Hollow Cathode

2013 ◽  
Vol 819 ◽  
pp. 344-349
Author(s):  
Yi Fang Wen ◽  
Yan Nian Rui ◽  
Chuang Chen ◽  
Hong Wei Wang
Keyword(s):  
Hollow Cathode ◽  
Plasma Discharge ◽  
Simulation Software ◽  
Particle Simulation ◽  
Ion Concentration ◽  
Large Area ◽  
Cathode Plasma ◽  
Plasma Surface ◽  
Discharge Structure ◽  
Nozzle Structure

The discharge of RF hollow cathode far zone plasma has advantages of high ion concentration, easy to implement the processing of a large area, given more and more attention. The characteristics of hollow cathode plasma flow have a great relationship with the hollow cathode nozzle structure. How to design the hollow cathode nozzle discharge structure accurately and conveniently is the key problem of the hollow cathode far plasma surface treatment. This article builds a hollow cathode plasma discharge self-consistent model; derive the relationship between the discharge current of the hollow cathode plasma and the hollow cathode nozzle structure. Optimize the design of the hollow cathode discharge structure using discharge particle simulation software, to achieve a fast and accurate design and the purpose of efficient plasma surface modification.

Self-Lubricating Composite Coating on Air Foil Bearing Shaft by Hollow Cathode Plasma Jet

2005 ◽  
Vol 486-487 ◽  
pp. 157-160
Author(s):  
Min Kyu Yang ◽  
Hyu Seung Yang ◽  
Jong Ku Park ◽  
Keun Ryu ◽  
Yong Bok Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Hollow Cathode ◽  
Composite Films ◽  
Plasma Jet ◽  
Solid Lubricants ◽  
The Self ◽  
Cathode Plasma ◽  
Alloy Matrix ◽  
Foil Bearing ◽  
Planar Magnetron

The self-lubricating composite films were deposited on Inconel 718 by Hollow Cathode Plasma Jet (HCPJ). These composite materials consist of chrome nickel alloy matrix and Ag, BaF2/CaF2 solid lubricants. The Cr2O3-NiCr-Ag composite thin film was crystallized and had the main peaks of Cr2O3 (012) and Ag (111). The deposition rate of 200 nm /min by HCPJ was much faster than the ordinary R.F planar magnetron sputtering. The surface roughness of coated shaft was 30 nm.

The Bakerian Lecture, 1988 - Amorphous semiconductors: a new generation of electronic materials

1988 ◽  
Vol 420 (1859) ◽  
pp. 201-218 ◽  
Keyword(s):  
Thin Film ◽  
Electronic Properties ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Consumer Products ◽  
Amorphous Semiconductors ◽  
Film Material ◽  
Large Area ◽  
Wide Range ◽  
New Generation

The review deals with the electronic properties and recent applications of amorphous silicon (a-Si), which can be regarded as the first member of a new generation of electronically viable thin-film materials. After a brief introduction to the structure and the distribution of electronic states in a-Si the preparation of the material by the decomposition of silane in a radio-frequency glow discharge is discussed. The presence of hydrogen in the deposition process is of crucial importance; saturation of defect states, particularly of dangling bonds in the growing structure, leads to a material with a remarkably low density of gap states. Effective substitutional doping from the gas phase now becomes possible with wide-ranging control of the electronic properties. A brief discussion of the doping mechanism in amorphous solids is followed by a summary of carrier transport mechanisms in a-Si, investigated by fast transient techniques. The possibility of doping in a-Si has removed a major limitation in the a-semiconductor field and has, during the past 10 years, led to an upsurge in applied interest in this electronically controllable thin film material. A summary of the present state of applied developments, many already in industrial production, is given. Two groups are discussed in some detail. The first, the photovoltaic development, is based on the a-Si p–i–n junction, and forms part of a wide range of consumer products, but larger area photovoltaic panels are now in production. In the second major development a-Si field effect transistors are used as the addressable elements in large area liquid crystal displays. Remarkable progress has been made with thin film colour displays for small portable television sets. The use of a-Si elements in addressable linear image sensing arrays for telefax applications, coupled with a-Si high-voltage transistor arrays in the associated printers, represents an important step towards an integrated a-Si technology in large-area applications.

Hollow cathode discharge sputtering device for uniform large area thin film deposition

1991 ◽  
Vol 9 (4) ◽  
pp. 2374-2377 ◽  
Author(s):  
H. Koch ◽  
L. J. Friedrich ◽  
V. Hinkel ◽  
F. Ludwig ◽  
B. Politt ◽  
...  
Keyword(s):  
Thin Film ◽  
Hollow Cathode ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Hollow Cathode Discharge ◽  
Large Area

High density large area hydrogen plasma by hollow cathode plasma array

2010 ◽  
Vol 205 (5) ◽  
pp. 1532-1535 ◽  
Author(s):  
Jeonghee Cho ◽  
Jack Yang ◽  
Haejung Park ◽  
Se-Geun Park
Keyword(s):  
Hollow Cathode ◽  
Hydrogen Plasma ◽  
High Density ◽  
Large Area ◽  
Cathode Plasma

Large-area YBCO thin film deposition using linear hollow cathode discharge sputtering

1996 ◽  
Vol 262 (1-2) ◽  
pp. 89-97 ◽  
Author(s):  
Th. Schurig ◽  
S. Menkel ◽  
Z. Quan ◽  
J. Beyer ◽  
B. Güttler ◽  
...  
Keyword(s):  
Thin Film ◽  
Hollow Cathode ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Hollow Cathode Discharge ◽  
Ybco Thin Film ◽  
Large Area

scholarly journals Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics

2020 ◽  
Vol 9 (5) ◽  
pp. 270-273
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Thin Film Transistor ◽  
Simulation Software ◽  
Active Components ◽  
Large Area ◽  
Silicon Thin Film ◽  
Flexible Display ◽  
Active Matrix

The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.

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