Comparative Photocatalytic Properties of Cu2O from Octahedron to Sphere Structures

2014 ◽  
Vol 609-610 ◽  
pp. 45-50 ◽  
Author(s):  
Li Min Qian ◽  
Jie Zhou ◽  
Chu Zheng ◽  
Di Chen ◽  
Bi Shen ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Surface Characteristics ◽  
Morphology Evolution ◽  
Simple Method ◽  
Visible Light Photocatalyst ◽  
Absorption Intensity ◽  
Potential Applications ◽  
Type Semiconductor ◽  
P Type ◽  
Controllable Preparation

Cu2O, a p-type semiconductor, has broad potential applications, especially as a visible-light photocatalyst. This paper presents a simple water-bath reflux to prepare Cu2O micro/nanoparticles. The morphology evolution from intact octahedrons to surface-pitted spheres was obtained by adjusting reducing agent and additive. Reflectance spectra show similar photo-absorption intensity and the same range from 250 nm to 650 nm. However, they perform different photocatalytic activity. Intact octahedron has the best photodegradation ability and next is vertex-and edge-damaged octahedron, the lowest for vertex-free polyhedrons and surface-pitted spheres. The enhanced photocatalytic activity for intact octahedrons should to be attributed to its surface characteristics of high index. Our study not only provides a simple method for controllable preparation of Cu2O micro/nanoparticles with different morphologies but also confirms the effect of morphologies on photocatalytic activity.

scholarly journals A Bi7.38Cr0.62O12+x crystal as a novel visible-light-active photocatalyst up to ∼650 nm

RSC Advances ◽  
2017 ◽  
Vol 7 (46) ◽  
pp. 28797-28801 ◽  
Author(s):  
W. X. Liao ◽  
X. L. Zhao ◽  
T. S. Wang
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Photoelectric Response ◽  
Excellent Photocatalytic Activity ◽  
Visible Light Active ◽  
Type Semiconductor ◽  
New Type ◽  
P Type

A new type of Bi-based p-type semiconductor, Bi7.38Cr0.62O12+x, has a strong photoelectric response until 647.4 nm and an excellent photocatalytic activity for decomposition and O2 production.

scholarly journals A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
Megersa Wodajo Shura
Keyword(s):  
Energy Levels ◽  
Localized States ◽  
Recombination Rates ◽  
Simple Method ◽  
Free Carriers ◽  
Excess Carrier ◽  
Carrier Lifetimes ◽  
Localized State ◽  
Type Semiconductor ◽  
P Type

In this research, the ranges of the localized states in which the recombination and the trapping rates of free carriers dominate the entire transition rates of free carriers in the bandgap of the p-type semiconductor are described. Applying the Shockley–Read–Hall model to a p-type material under a low injection level, the expressions for the recombination rates, the trapping rates, and the excess carrier lifetimes (recombination and trapping) were described as functions of the localized state energies. Next, the very important quantities called the excess carriers’ trapping ratios were described as functions of the localized state energies. Variations of the magnitudes of the excess carriers’ trapping ratios with the localized state energies enable us to categorize the localized states in the bandgap as the recombination, the trapping, the acceptor, and the donor levels. Effects of the majority and the minority carriers’ trapping on the excess carrier lifetimes are also evaluated at different localized energy levels. The obtained results reveal that only excess minority trapping affects the excess carrier lifetimes, and excess majority carrier trapping has no effect.

Photocatalytic activity of TiO2 synthesized by anodization and anodic spark deposition

MRS Advances ◽  
2020 ◽  
Vol 5 (61) ◽  
pp. 3141-3152
Author(s):  
Alma C. Chávez-Mejía ◽  
Génesis Villegas-Suárez ◽  
Paloma I. Zaragoza-Sánchez ◽  
Rafael Magaña-López ◽  
Julio C. Morales-Mejía ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photocatalytic Activity ◽  
Surface Characteristics ◽  
Amorphous Solids ◽  
X Ray Diffraction ◽  
X Ray ◽  
Catalytic Activities ◽  
Anodic Spark Oxidation ◽  
Porous Surfaces ◽  
Scanning Electron

AbstractSeveral photocatalysts, based on titanium dioxide, were synthesized by spark anodization techniques and anodic spark oxidation. Photocatalytic activity was determined by methylene blue oxidation and the catalytic activities of the catalysts were evaluated after 70 hours of reaction. Scanning Electron Microscopy and X Ray Diffraction analysis were used to characterize the catalysts. The photocatalyst prepared with a solution of sulfuric acid and 100 V presented the best performance in terms of oxidation of the dye (62%). The electric potential during the synthesis (10 V, low potential; 100 V, high potential) affected the surface characteristics: under low potential, catalyst presented smooth and homogeneous surfaces with spots (high TiO2 concentration) of amorphous solids; under low potential, catalyst presented porous surfaces with crystalline solids homogeneously distributed.

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

Preparation of Visible-Light-Responsive TiO2-xNx Photocatalyst by a Very Simple Method

2011 ◽  
Vol 383-390 ◽  
pp. 3188-3191
Author(s):  
Han Jie Huang ◽  
Wen Long She ◽  
Ling Wen Yang ◽  
Hai Peng Huang
Keyword(s):  
Photocatalytic Activity ◽  
Visible Light ◽  
Photoelectron Spectroscopy ◽  
Diffuse Reflection ◽  
Ammonia Solution ◽  
Reflection Spectra ◽  
X Ray Diffraction ◽  
Simple Method ◽  
X Ray ◽  
Light Excitation

A visible-light-responsive TiO2-xNx photocatalyst was prepared by a very simple method. Ammonia solution was used as nitrogen resource in this paper. The TiO2-xNx photocatalyst was characterized by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), UV-Vis diffuse reflection spectra (DRS), and X-ray photoelectron spectroscopy (XPS). The ethylene was selected as a target pollutant under visible light excitation to evaluate the activity of this photocatalyst. The new prepared TiO2-xNx photocatalyst with strong photocatalytic activity under visible light irradiation was demonstrated in the experiment.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

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