Effect of Oxygen Flow Rate and Post Annealing on Vanadium Oxide Thin Films Prepared by DC Pulse Magnetron Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 233-236 ◽  
Author(s):  
Wantanee Hincheeranun ◽  
Montri Aiempanakit ◽  
Kamon Aiempanakit ◽  
Mati Horprathum ◽  
Viyapon Patthanasetakul ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Transmission ◽  
Film Surface ◽  
Film Deposition ◽  
Oxygen Flow ◽  
Ambient Conditions ◽  
Flow Rates ◽  
Air Atmosphere ◽  
Post Annealing

In this work, we investigated V2O5 thin films prepared by a DC pulse reactive magnetron sputtering at ambient conditions. The effects of oxygen flow rates during the film deposition and post annealing in air atmosphere were explored. The V2O5 thin films were sputtered from vanadium target onto silicon wafer and glass slide substrates at room temperature. The as-deposited V2O5 thin films were annealed at 200°C under air atmosphere. The films were then examined for their crystallinity, physical microstructures, and optical transmission. The crystallinity and morphology of the films were investigated by grazing incident x-ray diffraction, atomic force microscopy, and field-emission scanning electron microscopy. The optical transmission was determined by UV-Vis Spectrophotometer. The results showed that the as-deposited films were amorphous, whereas the post annealed films indicated V2O5 phase in all samples. The increase in the oxygen flow rates during the deposition led to the decrease in the deposition rate, film thickness, and film surface roughness. In addition, the oxygen flow can increase the average transmission of the V2O5 thin films. The effects of the annealing treatment of the optical transmission spectra will be discussed.

The Structure and Magnetic Properties of NiZn-Ferrite Films Deposited by Magnetron Sputtering at Room Temperature

2013 ◽  
Vol 690-693 ◽  
pp. 1702-1706 ◽  
Author(s):  
Shuang Jun Nie ◽  
Hao Geng ◽  
Jun Bao Wang ◽  
Lai Sen Wang ◽  
Zhen Wei Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Saturation Magnetization ◽  
Room Temperature ◽  
Oxygen Flow ◽  
Flow Ratio ◽  
Study Results ◽  
Ferrite Thin Films ◽  
Ferrite Films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing

2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Optical Transmission ◽  
Film Deposition ◽  
Transmission Measurement ◽  
Conductive Heat ◽  
Optical Transmission Measurement

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Visible Region ◽  
Film Surface ◽  
Optical Transmittance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Indium Zinc Oxide

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

Performance improvement of TiO2/CuO by increasing oxygen flow rates and substrate temperature using DC reactive magnetron sputtering method

Optik ◽  
2020 ◽  
Vol 206 ◽  
pp. 164297
Author(s):  
Paulina Sawicka-Chudy ◽  
Grzegorz Wisz ◽  
Maciej Sibiński ◽  
Zbigniew Starowicz ◽  
Łukasz Głowa ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Performance Improvement ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Flow Rates ◽  
Dc Reactive Magnetron Sputtering

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

The Influence of Bi Content on the Properties of Bismuth Ferrite Thin Films Fabricated by Magnetron Sputtering

2013 ◽  
Vol 745-746 ◽  
pp. 131-135
Author(s):  
Hu Rui Yan ◽  
Nuo Fan Ding ◽  
Gang Wu ◽  
Ping Xiong Yang ◽  
Jun Hao Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Extinction Coefficient ◽  
Energy Gap ◽  
Lattice Mismatch ◽  
Bismuth Ferrite ◽  
Film Surface ◽  
Si Substrate ◽  
Impurity Phases

In the process of BiFeO3 film preparation by magnetron sputtering, Bi element is volatile, leading to the films which often appear impurity phases. Therefore, Both Bi excessive 5% (B1.05FO) and 8% (B1.08FO) BFO film in Si substrate were prepared by magnetron sputtering. X-Ray Diffraction (XRD) results showed that the BFO thin films fabricated in the Si substrate are perovskite structure, that the B1.08FO film appeared less impurity phases than B1.05FO film, and that stress due to substrate lattice mismatch caused the shift of XRD patterns. In Raman study, it was concluded that both B1.08FO film and B1.05FO film appeared ten Raman peaks in the range from 50cm-1 to 800cm-1, and that B1.08FO Raman peaks intensity was stronger in 137.1cm-1.168.5cm-1 and 215.3cm-1. Spectroscopic ellipsometry test showed that the refractive index and the extinction coefficient of B1.05FO film were 2.25 and 0.07 respectively in 600 nm with 2.67eV of energy gap; the refractive index and the extinction coefficient of B1.08FO film were 2.14 and 0.05 in 600 nm respectively with 2.71eV of energy gap. Atomic Force Microscope (AFM) was used to characterize the film surface morphology, finding that the B1.08FO film prepared in Si substrate was denser while grain size and surface roughness were smaller.

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