Characterization of Stoichiometric ZrO2 Thin Film on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy

2016 ◽  
Vol 701 ◽  
pp. 77-82
Author(s):  
Yew Hoong Wong ◽  
Kuan Yew Cheong

Simultaneous thermal oxidation and nitridation technique was utilized to transform sputtered Zr to stoichiometric ZrO2 thin films on Si substrate. The stoichiometry of this type of oxide has high dielectric constant value of ~25 may be applied as dielectric in metal-oxide-semiconductor-based power devices. Through nitrous oxide gas environment, the oxidation/nitridation process was performed at 700°C for a set of time of 5–20 min. Chemical properties of the fabricated films have been characterized by angle-resolved x-ray photoelectron spectrometer. From the characterization, it was found that stoichiometric Zr-O (ZrO2) was formed. Nitrogen content in the samples was investigated. It was identified that sample oxidized/nitrided for 15 min gives the highest atomic percentage of nitrogen of 2.64 at% in the interfacial layer. This nitrogen content in the near interface region may help to passivate the Si dangling bonds, which may thus enhance the interface quality of oxide-semiconductor.

2013 ◽  
Vol 203-204 ◽  
pp. 81-85 ◽  
Author(s):  
Małgorzata Zienkiewicz-Strzałka ◽  
Marek Rotko ◽  
Stanislaw Pikus

This paper reports, for the first time, synthesis and characterization of new bifunctional materials containing platinum and silver ions deposited on mesoporous ordered silica SBA-15. Both types of ions were incorporated on silica surface during adsorption from water solutions containing various amounts of dissolved tetraamineplatinum(II) dichloride and diamminesilver(I) hydroxide or tetraamineplatinum(II) dichloride and diamminesilver(I) chloride complexes. The silanol groups on silica surface play important role in adsorption mechanism and one of the most commonly used technique for their characterization is photoacoustic spectroscopy. This technique provides clear evidence of successfully incorporation two types of precious metal ions (Pt and Ag) on SBA-15 surface. The decomposition process of absorbed complexes was investigated according to high temperature in helium. The products of decomposition were analyzed by mass spectrometer. Obtained results show that decomposition temperature of platinum and silver complexes are quite vary. Similarly mechanisms of decomposition of ligands from silver and platinum complexes are also different. Moreover, the structural and chemical properties of Pt,Ag-SBA-15 samples were characterized by X-ray diffraction (XRD), nitrogen adsorption-desorption, transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS).


1989 ◽  
Vol 163 ◽  
Author(s):  
S.N. Kumar ◽  
G. Chaussemy ◽  
A. Laugier ◽  
B. Canut ◽  
M. Charbonnier

AbstractAngle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.


2020 ◽  
Vol 27 (6) ◽  
pp. 1614-1617
Author(s):  
Jingtao Zhu ◽  
Jiayi Zhang ◽  
Haochuan Li ◽  
Yuchun Tu ◽  
Jinwen Chen ◽  
...  

The `water window', covering 2.4–4.4 nm, is an important wavelength range particularly essential to biology research. Cr/Ti multilayers are one of the promising reflecting elements in this region because the near-normal-incidence reflectivity is theoretically as high as 64% at 2.73 nm. However, due to multilayer imperfections, the reported reflectivity is lower than 3% for near-normal incidence. Here, B and C were intentionally incorporated into ultra-thin Cr/Ti soft X-ray multilayers by co-deposition of B4C at the interfaces. The effect on the multilayer structure and composition has been investigated using X-ray reflectometry, X-ray photoelectron spectroscopy, and cross-section electron microscopy. It is shown that B and C are mainly bonded to Ti sites, forming a nonstoichiometric TiB x C y composition, which hinders the interface diffusion, supresses the crystallization of the Cr/Ti multilayer and dramatically improves the interface quality of Cr/TiB x C y multilayers. As a result, the near-normal-incidence reflectivity of soft X-rays increases from 4.48% to 15.75% at a wavelength of 2.73 nm.


2011 ◽  
Vol 55-57 ◽  
pp. 1506-1510 ◽  
Author(s):  
Jing Wei ◽  
Xin Tan ◽  
Tao Yu ◽  
Lin Zhao

A series of Y/TiO2nanoparticles (NPs) were synthesized via sol-gel method. The crystal structures, morphologies and chemical properties were characterized using X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). We investigated the effects of different doping amounts of Y on the reaction of CO2photoreduction. The results shown that 0.1 wt.%Y/TiO2(0.1YT) performed the highest photocatalytic activity, which yielded 384.62 µmol/g∙cat. formaldehyde after 6 h of UV illumination.


2020 ◽  
Vol 2 (1) ◽  
pp. 22
Author(s):  
Irnik Dionisiev ◽  
Vera Marinova ◽  
Krastyo Buchkov ◽  
Hristosko Dikov ◽  
Ivalina Avramova ◽  
...  

Platinum diselenide (PtSe2), which belongs to the transition metals dichalcogenide (TMDCs) class of 2D materials, is characterized with a transition from semimetal to semiconductor with a thickness variation from bulk to monolayer and found in versatile applications especially in sensors and mid-infrared detectors. In this study we report the large-scale synthesis of PtSe2 layers by thermally assisted selenization of pre-deposited platinum films in a horizontal quartz-tube Chemical Vapor Deposition (CVD) reactor. Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) are used for characterization of the obtained 2D PtSe2. It is observed that the Raman spectra of PtSe2 show strong dependence on the thickness (Pt deposition time). XPS analysis was applied to examine the chemical compositions in order to assess the quality of the synthesized PtSe2 films. All the studied properties reveal great potential to obtain continuous layers with a controlled thickness and composition and further potential for integration in functional heterostructures for future nanoelectronic and optoelectronic devices.


1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.


2014 ◽  
Vol 34 (3) ◽  
pp. 841-849 ◽  
Author(s):  
M. Kanuchova ◽  
L. Kozakova ◽  
M. Drabova ◽  
M. Sisol ◽  
A. Estokova ◽  
...  

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.


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