Thermal Stability of Solid Aluminum Electrolytic Capacitors with Conductive Polyaniline Counter Electrode

2012 ◽  
Vol 512-515 ◽  
pp. 1018-1021
Author(s):  
Xu Fei Zhu ◽  
Long Fei Jiang ◽  
Wei Xing Qi ◽  
Chao Lu ◽  
Ye Song
Keyword(s):  
Thermal Stability ◽  
Counter Electrode ◽  
Electrolytic Capacitor ◽  
Aluminum Electrolytic Capacitor ◽  
Dodecylbenzenesulfonic Acid ◽  
Excellent Thermal Stability ◽  
High Frequencies ◽  
Solid Aluminum ◽  
Good Thermal Stability ◽  
Thermal Stability Of

To overcome the risk of electrolyte leakage and the shortcoming of higher impedance at high frequencies for the conventional aluminum electrolytic capacitor impregnated with electrolyte solutions, solid aluminum electrolytic capacitor employing conducting polyaniline (PANI) as a counter electrode was developed. The as-fabricated solid capacitors have very low impedances at high frequencies and excellent thermal stability. The superior performances can be ascribed to high conductivity and good thermal stability of the camphorsulfonic acid (CSA)-dodecylbenzenesulfonic acid (DBSA) co-doped PANI.

Finite Element Analysis and Optimization of Thermal Deformation of Resin Concrete Manufacturing Bases

2014 ◽  
Vol 543-547 ◽  
pp. 4010-4013
Author(s):  
Yao Chen ◽  
Xiu Xia Liang ◽  
Shuang Qiu
Keyword(s):  
Thermal Stability ◽  
Machine Tool ◽  
Thermal Deformation ◽  
Precision Machining ◽  
Element Analysis ◽  
Excellent Thermal Stability ◽  
Good Thermal Stability ◽  
Machining Center ◽  
Ultra Precision ◽  
Thermal Stability Of

Resin concrete generally has good mechanical properties, excellent thermal stability and great vibration resistance, the model of the ultra-precision machining center bed is established to study the thermal stability of the resin concrete using virtual reality and collaborative simulation technology based on Pro/E and ANSYS Workbench. The main factors that affect the machine tool bed thermal deformation were found through analyzing the deformation results and the materials and restrain conditions were optimized. The results proved that the optimized machine tool bed has good thermal stability and theoretical basis was provided to improve the thermal stability of the ultra-precision machining centers.

Thermally Stabilized Polyaniline With m-Xylylenedisulfonic Acid And Its Application For A Counter Electrode Of A Tantalum Capacitor

1995 ◽  
Vol 413 ◽  
Author(s):  
H. Ishikawa ◽  
H. Yageta ◽  
K. Amano ◽  
M. Satoh ◽  
E. Hasegawa
Keyword(s):  
Thermal Stability ◽  
Counter Electrode ◽  
Oxidative Polymerization ◽  
Dielectric Surface ◽  
Excellent Thermal Stability ◽  
Good Thermal Stability ◽  
Small Series ◽  
Conductive Polyaniline ◽  
Tantalum Capacitor ◽  
Improved Characteristics

ABSTRACTWe have succeeded in preparing a conductive polyaniline (PAn) with improved thermal stability from a chemical oxidative polymerization of aniline by using an oxidant and a novel protonic acid, m-xylylenedisulfonic acid (XDSA). The acid was synthesized from dibromoxylene and characterized by elemental analysis, IR and NMR spectroscopies. The polymer which is doped with XDSA shows a high conductivity of 5 S/cm. The conductivity does not change with annealing at 125°C in air for over 1000 hours. This polymer exhibits good thermal stability, and this stability is attributed to XDSA dopant, which consists of a bi-functional sulfonic group bonded to a polymer chain. By immersing an anodized tantalum pellet into a reactive solution, PAn doped with XDSA film is formed on the dielectric surface. The tantalum capacitor using PAn doped with XDSA as a counter electrode shows the improved characteristics: high apparent capacitance (90%), and small series resistance (<200mΩ at 100kHz). The capacitor demonstrates an excellent thermal stability due to because of the exceptional heat-resistance of PAn doped with XDSA formed in the capacitor.

Using CoSi2 /Polysilicon Polycide Structure as a Gate Diffusion Source in Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
W. Chen ◽  
J. Lin ◽  
S. Banerjee ◽  
J. Lee
Keyword(s):  
Thermal Stability ◽  
Gate Oxide ◽  
Oxide Interface ◽  
Excellent Thermal Stability ◽  
Good Thermal Stability ◽  
Polysilicon Gate ◽  
Gate Structure ◽  
Diffusion Source ◽  
Short Time ◽  
Thermal Stability Of

ABSTRACTIon implanted CoSi2 as a gate doping source has been studied as a compatible process to the Silicide-As Diffusion-Source (SADS) process which has been widely considered for shallow source/drain junction formation. The effects of the polysilicon gate microstructure on diffusion behavior and the thermal stability of CoSi2 has been investigated. It has been found that CoSi2 formed on reoxidized polysilicon gates has poor thermal stability but requires short time to achieve degenerate doping near the polysilicon/gate oxide interface. On the other hand, CoSi2 formed on as-deposited amorphous silicon has excellent thermal stability but requires longer time to achieve degenerate doping near the polysilicon/gate oxide interface. The trade-off between the required thermal budget to achieve degenerate doping and thermal stability of the CoSi2/polysilicon gate structure will be discussed. In optimizing the process, our results indicated that reoxidized amorphous Si gates have both good thermal stability as well requiring short time to achieve degenerate doping. The thermal degradation of CoSi2 was found to have little effect on the gate oxide breakdown voltage.

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

High partial thermal conductivity of luminescence sites: a crucial factor for reducing the heat-induced lowering of the luminescence efficiency

2021 ◽  
Author(s):  
Ni Luo ◽  
Jing Xu ◽  
Xiyue Cheng ◽  
ZhenHua Li ◽  
Yidong Huang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermal Stability ◽  
Practical Applications ◽  
Good Thermal Stability ◽  
The Past ◽  
Luminescence Efficiency ◽  
Thermal Stability Of

The good thermal stability of a phosphor is crucial for its practical applications. Unfortunately, in the past decades, only Gurney-Mott equation was available to describe the relation between the luminescence...

Thermal stability of WAlN/WAlON/Al2O3-based solar selective absorber coating

MRS Advances ◽  
2016 ◽  
Vol 1 (41) ◽  
pp. 2807-2813 ◽  
Author(s):  
Atasi Dan ◽  
Kamanio Chattopadhyay ◽  
Harish C. Barshilia ◽  
Bikramjit Basu
Keyword(s):  
Thermal Stability ◽  
Stainless Steel ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Rf Magnetron Sputtering ◽  
Thermal Conversion ◽  
Solar Absorptance ◽  
Excellent Thermal Stability ◽  
Oxidation In Air ◽  
Thermal Stability Of

AbstractThe solar absorptance property of W/WAlN/WAlON/Al2O3-based coatings, deposited by DC/RF magnetron sputtering on stainless steel substrate was studied by measuring the reflectance spectra in the wavelength range of 250 - 2500 nm. The effect of thermal annealing on the optical properties of the solar selective absorber coatings was investigated. Annealing the coatings at 450°C for 150 hrs in air did not show any significant change in the spectral properties of the absorber coating indicating the excellent thermal stability of the coating. The W layer acts as infrared reflective layer and diffusion barrier on stainless steel substrate. The top Al2O3 layer serves as dense shield to protect the under layers from oxidation in air. In summary, the present study indicates the potential application of W/WAlN/WAlON/Al2O3-based selective coatings in high temperature photo thermal conversion systems.

Synthesis and Application of a Novel Intumescent Flame Retardant Containing Ferrocenyl

2014 ◽  
Vol 1033-1034 ◽  
pp. 931-936
Author(s):  
Cong Yan Chen ◽  
Rui Lan Fan ◽  
Guan Qun Yun
Keyword(s):  
Thermal Stability ◽  
Flame Retardant ◽  
Flame Retardants ◽  
Intumescent Flame Retardant ◽  
Limiting Oxygen Index ◽  
Good Thermal Stability ◽  
H Nmr ◽  
Positive Effect ◽  
Thermal Stability Of ◽  
Phosphate Groups

A novel intumescent flame retardant (IFR) containing ferrocene and caged bicyclic phosphate groups, 1-oxo-4-[4'-(ferrocene carboxylic acid phenyl ester)] amide-2, 6, 7-trioxa-1-phosphabicyclo- [2.2.2] octane (PFAM), was successfully synthesized. The synthesized PFAM were added to flammable polyurethane (PU) as flame retardants and smoke suppressants. The structure of PFAM was characterized by Fourier transform infrared spectroscopy (FTIR), nuclear magnetic resonance (1H NMR) and elemental analysis. Thermal stability of PFAM was tested by themogravimetric analysis (TGA). The results revealed that PFAM had good thermal stability and high char weight, the char weight up to 54% at 600 °C. Flammability properties of PU/PFAM composites were investigated by limiting oxygen index (LOI) test and UL-94 test, respectively. The results of LOI tests showed that the addition of PFAM enhanced flame retardancy of PU. When the content of PFAM reaches to 3%, the LOI value is 22.2. The morphologies of the char for PU and PU/3% PFAM composite can be obtained after LOI testing were examined by SEM. The results demonstrated that PFAM could promote to form the compact and dense intumescent char layer. Experiments showed that, the PFAM application of polyurethane showed positive effect.

Janus molecules: large second-order nonlinear optical performance, good temporal stability, excellent thermal stability and spherical structure with optimized dendrimer structure

2018 ◽  
Vol 2 (7) ◽  
pp. 1374-1382 ◽  
Author(s):  
Pengyu Chen ◽  
Huanyu Zhang ◽  
Mengmeng Han ◽  
Ziyao Cheng ◽  
Qian Peng ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Nonlinear Optical ◽  
Temporal Stability ◽  
Second Order ◽  
Optical Performance ◽  
Excellent Thermal Stability ◽  
Good Thermal Stability ◽  
Spherical Structure ◽  
Electro Optic

A Janus molecule J2 containing five FTC moieties exhibited good thermal stability, excellent electro-optic performance and good temporal stability.

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