Features of Obtaining ZnO:Ag Thin Films Systems by the Method of Simultaneous Magnetron Sputtering with Subsequent Annealing

2021 ◽  
Vol 893 ◽  
pp. 11-15
Author(s):  
Pavels Sarajevs ◽  
Vjaceslavs Gerbreders ◽  
Edmunds Tamanis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heavy Metal ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Metal Ions ◽  
Thermal Annealing ◽  
Heavy Metal Ions ◽  
Thin Film Composites ◽  
Film Composites

This work describes the study of the effect of thermal annealing on the properties of the ZnO:Ag thin film composites, which are the basis of sensors of heavy metal ions, as well as sensors of poisonous and explosive substances. Changes of the optical properties and morphology of the surfaces of composites with five different component ratios were analyzed. The studies performed have revealed significant changes in the properties of nanocomposites ZnO:Ag. This study may become the basis for future works on improving the sensitivity of sensors of poisonous and explosive substances.

ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING

2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electrical And Optical Properties ◽  
Axis Orientation ◽  
Sputtering Power

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .

scholarly journals Investigating the Properties of Cetyltrimethylammonium Bromide/Hydroxylated Graphene Quantum Dots Thin Film for Potential Optical Detection of Heavy Metal Ions

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2591 ◽  
Author(s):  
Nur Ain Asyiqin Anas ◽  
Yap Wing Fen ◽  
Nor Azah Yusof ◽  
Nur Alia Sheh Omar ◽  
Nur Syahira Md Ramdzan ◽  
...  
Keyword(s):  
Thin Film ◽  
Heavy Metal ◽  
Quantum Dots ◽  
Metal Ions ◽  
Heavy Metal Ions ◽  
Cetyltrimethylammonium Bromide ◽  
Graphene Quantum Dots ◽  
Atomic Force ◽  
The Fourier Transform ◽  
High Absorption

The modification of graphene quantum dots (GQDs) may drastically enhance their properties, therefore resulting in various related applications. This paper reported the preparation of novel cetyltrimethylammonium bromide/hydroxylated graphene quantum dots (CTAB/HGQDs) thin film using the spin coating technique. The properties of the thin film were then investigated and studied. The functional groups existing in CTAB/HGQDs thin film were confirmed by the Fourier transform infrared (FTIR) spectroscopy, while the atomic force microscope (AFM) displayed a homogenous surface of the thin film with an increase in surface roughness upon modification. Optical characterizations using UV-Vis absorption spectroscopy revealed a high absorption with an optical band gap of 4.162 eV. Additionally, the photoluminescence (PL) spectra illustrated the maximum emission peak of CTAB/HGQDs thin film at a wavelength of 444 nm. The sensing properties of the as-prepared CTAB/HGQDs thin film were studied using a surface plasmon resonance technique towards the detection of several heavy metal ions (HMIs) (Zn2+, Ni2+, and Fe3+). This technique generated significant results and showed that CTAB/HGQDs thin film has great potential for HMIs detection.

scholarly journals Optical Properties of Titania-Cobalt Nitrate Composite Thin Films

1996 ◽  
Vol 5 (6) ◽  
pp. 096369359600500
Author(s):  
F. Pacheco ◽  
R. Palomino ◽  
G. Martínez ◽  
A. Mendoza-Galván ◽  
R. Rodriguez ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Cobalt Nitrate ◽  
Experimental Conditions ◽  
Ellipsometric Characterization ◽  
Titania Films ◽  
Doped Titania ◽  
Thin Film Composites ◽  
Film Composites

Optical properties of titania thin films supported on silica plates and compounded with varying amounts of Co(II) from cobalt nitrate are reported. The ellipsometric characterization allows to model the spatial micro-structure of these thin film composites. The titania films were produced by the sol-gel method at room temperature and their thicknesses can be controlled by modifying the experimental conditions. The refractive index of the doped titania films was also determined by using ellipsometry.

scholarly journals Poly(Homopiperazine–Amide) Thin-Film Composite Membrane for Nanofiltration of Heavy Metal Ions

ACS Omega ◽  
2020 ◽  
Vol 5 (44) ◽  
pp. 28749-28759
Author(s):  
Syed Ibrahim ◽  
Mahdi Mohammadi Ghaleni ◽  
Arun M. Isloor ◽  
Mona Bavarian ◽  
Siamak Nejati
Keyword(s):  
Thin Film ◽  
Heavy Metal ◽  
Metal Ions ◽  
Composite Membrane ◽  
Heavy Metal Ions ◽  
Film Composite ◽  
Thin Film Composite Membrane ◽  
Thin Film Composite

[Fe(CN)6]4− decorated mesoporous gelatin thin films for colorimetric detection and as sorbents of heavy metal ions

2013 ◽  
Vol 42 (36) ◽  
pp. 13265 ◽  
Author(s):  
Li Shi ◽  
Hubiao Huang ◽  
Luwei Sun ◽  
Yanping Lu ◽  
Binyang Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Heavy Metal ◽  
Metal Ions ◽  
Heavy Metal Ions ◽  
Colorimetric Detection

Effect of deposition pressure on the structural and optical properties of Ga2O3films obtained by thermal post-crystallization

CrystEngComm ◽  
2018 ◽  
Vol 20 (1) ◽  
pp. 133-139 ◽  
Author(s):  
Yikai Liao ◽  
Shujie Jiao ◽  
Shaofang Li ◽  
Jinzhong Wang ◽  
Dongbo Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Structural And Optical Properties ◽  
Deposition Pressure ◽  
Amorphous Thin Films

β-Ga2O3films have been obtained by thermal annealing of amorphous thin films that were deposited by radio frequency magnetron sputtering.

scholarly journals Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 859 ◽  
Author(s):  
Wei-Kai Wang ◽  
Kuo-Feng Liu ◽  
Pi-Chuen Tsai ◽  
Yi-Jie Xu ◽  
Shih-Yung Huang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Average Crystallite Size ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atmospheric Conditions

Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.

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