Normally-Off GaN Power Device Based on Stack AlGaN Barrier Structure and P-Type NiO Gate Electrode

In this study, we propose a novel normally-off AlGaN/GaN HFET based on stack AlGaN barrier structure and p-type NiO gate. The residual thin AlGaN barrier (with low Al content) is adopted to alleviate mobility degradation. Besides, p-type conductive NiO formed by thermal oxidation at 500 °C was used as gate electrode, which contribute to the positive shift of threshold voltage. Combining NiO gate and thin barrier structure, normally-off device with a threshold voltage of +1.1 V is realized. Temperature dependent transfer characteristics show that the normally-off device presents good thermally stability within the temperature range from 25 to 150 °C.

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On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films

MRS Proceedings ◽

10.1557/proc-106-77 ◽

1987 ◽

Vol 106 ◽

Cited By ~ 3

Author(s):

Mark S. Rodder ◽

Dimitri A. Antoniadis

Keyword(s):

Numerical Calculation ◽

Polycrystalline Silicon ◽

Amorphous Region ◽

Defect States ◽

Temperature Dependent ◽

Step Process ◽

Dependent Potential ◽

Si Films ◽

Polycrystalline Silicon Films ◽

P Type

ABSTRACTIt is shown that the grain boundary (GB) in polycrystalline-silicon (poly-Si) films need not be modeled as a temperature-dependent potential barrier or as an amorphous region to explain the temperature (T) dependence of resistivity (ρ) in p-type poly-Si films at low T. Specifically, we consider that QB defect states allow for the tunneling component of current to occur by a two-step process. Incorporation of the two-step process in a numerical calculation of ρ vs. T results in excellent agreement with available data from 100 K to 300 K.

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Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

MRS Proceedings ◽

10.1557/proc-607-321 ◽

1999 ◽

Vol 607 ◽

Author(s):

S. Kato ◽

T. Horikoshi ◽

T. Ohkubo ◽

T. Iida ◽

Y. Takano

Keyword(s):

Silicon Germanium ◽

Bulk Crystals ◽

Temperature Dependent ◽

Alloy Scattering ◽

Self Diffusion ◽

Pn Junction ◽

Current Voltage ◽

Vertical Bridgman ◽

Current Voltage Characteristics ◽

P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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Determination of band offsets between p-NiO gate electrode and unintentionally doped GaN for normally-off GaN power device

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.09.037 ◽

2017 ◽

Vol 728 ◽

pp. 400-403 ◽

Cited By ~ 10

Author(s):

Liuan Li ◽

Wenjing Wang ◽

Liang He ◽

Xiaorong Zhang ◽

Zhisheng Wu ◽

...

Keyword(s):

Power Device ◽

Gate Electrode ◽

Band Offsets

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1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

MRS Proceedings ◽

10.1557/opl.2015.546 ◽

2015 ◽

Vol 1770 ◽

pp. 25-30 ◽

Cited By ~ 3

Author(s):

V.C. Lopes ◽

A.J. Syllaios ◽

D. Whitfield ◽

K. Shrestha ◽

C.L. Littler

Keyword(s):

Electrical Conductivity ◽

Amorphous Silicon ◽

Chemical Vapor ◽

Variable Range Hopping ◽

Temperature Dependent ◽

Noise Component ◽

Variable Range ◽

Noise Measurements ◽

P Type ◽

Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

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Temperature Dependent Model for Hole Effective Mass in Heavily Doped p-type SiGe

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1996321 ◽

1996 ◽

Vol 06 (C3) ◽

pp. C3-137-C3-142

Author(s):

S. Sokolic ◽

S. Amon

Keyword(s):

Effective Mass ◽

Temperature Dependent ◽

Hole Effective Mass ◽

Dependent Model ◽

Heavily Doped ◽

Temperature Dependent Model ◽

P Type

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Ground Plane Impact on Performance of Relaxed Ge FinFETs

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v14i1.55 ◽

2019 ◽

Vol 14 (1) ◽

pp. 1-6

Author(s):

Alberto Vinícius Oliveira ◽

Guilherme Vieira Gonçalves ◽

Paula Ghedini Der Agopian ◽

João Antonio Martino ◽

Jérôme Mitard ◽

...

Keyword(s):

Threshold Voltage ◽

Computer Aided Design ◽

Doping Concentration ◽

Ground Plane ◽

Subthreshold Swing ◽

Voltage Variation ◽

Electrostatic Coupling ◽

P Type ◽

Aided Design ◽

Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

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