Fracture Failure Analysis of the Blowout Preventer Ram in an Oilfield

2021 ◽  
Vol 1035 ◽  
pp. 458-463
Author(s):  
Shen Cong ◽  
Zhi Hai Fan ◽  
Dong Feng Li ◽  
Ke Tong ◽  
Nan Ji
Keyword(s):  
Brittle Fracture ◽  
Failure Analysis ◽  
Impact Load ◽  
Service Process ◽  
Magnetic Powder ◽  
Fracture Failure ◽  
Main Fracture ◽  
Blowout Preventer ◽  
Metallographic Inspection ◽  
Scanning Electron

This paper gives a thorough investigation on the fracture failure of the blowout preventer (BOP) ram. Through appearance inspection, magnetic powder inspection, physicochemical inspection, metallographic inspection and scanning electron microscope (SEM), the main fracture reason of the BOP ram is that there was some original cracks in the BOP ram before fracture, during the service process the bop ram is subjected to impact load, therefore brittle fracture occurs due to the high brittleness of the gate material (which is caused by large internal structure) and low anti-crack propagation ability. Key words: Blowout preventer (BOP) ram; Fatigue break; Brittle fracture; Failure analysis

The Fracture Failure Analysis of Precision Centrifuge Spindle

2014 ◽  
Vol 971-973 ◽  
pp. 802-805
Author(s):  
Wei Feng Zhang ◽  
Li Yan ◽  
Fu Xia Zhang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Composition ◽  
Fracture Mechanics ◽  
Failure Analysis ◽  
Fatigue Failure ◽  
High Speed ◽  
Experimental Results ◽  
Fracture Failure ◽  
Scanning Electron

For the problem of high-speed rotating centrifuge spindle fracture failures, relevant analyses are conducted from the perspective of microstructure, chemical composition and fracture mechanics by using scanning electron microscopy and related instruments. Experimental results and analyses indicate that the spindle fracture is fatigue failure, mainly caused by cold cracks generated on the journal surfacing. Based on the analysis results, improvements and measures are suggested to better solve the spindle weld fracture failure problems.

Torque Converter Turboshaft Fracture Failure Analysis and Improvement

2014 ◽  
Vol 571-572 ◽  
pp. 1087-1090
Author(s):  
Lei Zhang ◽  
Xi Bao Chen ◽  
Hong Bo Shan ◽  
Xue Lei Wu ◽  
Yan Min Zhao
Keyword(s):  
Electron Microscopy ◽  
Failure Analysis ◽  
Torque Converter ◽  
Optical Microscope ◽  
Mechanical Transmission ◽  
Transmission Power ◽  
Improvement Program ◽  
Fracture Failure ◽  
Cause Of Failure ◽  
Scanning Electron

Torque converter turboshaft is a hydraulic mechanical transmission devices of key components. In a new-mounted hydraulic mechanical transmission, super heavy laden vehicle during the test, the torque converter turboshaft fracture occurs when the vehicle traveling to 13 00 km, resulting in transmission power interruption, chassis parking problems. To achieve accurate positioning of the torque converter turboshaft fracture failure reasons, this paper analyzes the means of optical microscope and scanning electron microscopy, carried out on the fracture failure analysis, then using classical and finite element method to calculate the turboshaft intensity of the strength, and proposed optimization improvement program based on the cause of failure.

Fracture Failure Analysis of 304 Stainless Steel Bolt in Chemical Plant Onshore

2012 ◽  
Author(s):  
Jifeng Wang ◽  
Xiaoying Tang ◽  
Houde Yu ◽  
Yaozhou Qiang ◽  
Ruqing Wu
Keyword(s):  
Stainless Steel ◽  
Failure Analysis ◽  
Energy Dispersive Spectrometer ◽  
Lath Martensite ◽  
Cold Drawing ◽  
304 Stainless Steel ◽  
Intergranular Stress Corrosion ◽  
Fracture Failure ◽  
Intergranular Stress Corrosion Cracking ◽  
Scanning Electron

This paper presented the fracture failure analysis of 304 stainless steel bolt that was in service in an onshore pipeline with medium pressure, normal temperature and non-corrosive. The fracture of the bolts was not due to obvious plastic deformation. Based on the scanning-electron microscope (SEM) findings, a lot of carbide distributed in boundary of the grains, which was primary Cr-carbide. All cracks were indicative of intercrystalline fracture. The corrosive element of chloride was above allowed standard as detected in fracture surface by energy-dispersive spectrometer (EDS). In addition, the analysis showed that some lath martensite formed since the bolt was fabricated by cold-drawing, which made it be more sensitive to SCC. Given all that, one conclusion was drawn that the failure cause of the stainless steel bolt was attributed to intergranular stress corrosion cracking (IGSCC).

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Using the scanning electron microscope for failure analysis of high density magnetic media

1987 ◽  
Vol 45 ◽  
pp. 392-393
Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
High Density ◽  
Magnetic Media ◽  
Specific Data ◽  
Retrieval Systems ◽  
Operating Environments ◽  
The Media ◽  
Scanning Electron

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

2000 ◽  
Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Wafer Fabrication ◽  
X Ray ◽  
Particle Contamination ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

Solving the Voltage Contrast on Floating Substrate with Standard FA Toolset

2016 ◽  
Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Silicon On Insulator ◽  
Mixed Signal ◽  
Voltage Contrast ◽  
Scanning Electron

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.

Brittle fracture of nickel by dynamic indentation

1992 ◽  
Vol 7 (8) ◽  
pp. 1973-1975 ◽  
Author(s):  
J.W. Hoehn ◽  
T. Foecke ◽  
W.W. Gerberich
Keyword(s):  
Electron Microscopy ◽  
Brittle Fracture ◽  
Fracture Process ◽  
Low Energy ◽  
Face Centered Cubic ◽  
Dynamic Indentation ◽  
Transgranular Cleavage ◽  
Energy Process ◽  
Face Centered ◽  
Scanning Electron

Cracks of up to 40 μm which are either transgranular cleavage or very low energy “ductile” cracks have been introduced into large-grained fcc Ni. The mechanism for introducing this brittle fracture was dynamic indentation. Optical and scanning electron microscopy together with use of selected area channeling patterns were used to confirm that the fracture process is transgranular. The results qualitatively support the hypothesis that dynamic cracks originating in a brittle film can propagate relatively large distances into a ductile face-centered-cubic substrate by a rapid, low energy process.

Fracture failure analysis of elliptical hole bored granodiorite rocks under impact loads

2020 ◽  
Vol 107 ◽  
pp. 102516
Author(s):  
Ming Tao ◽  
Huatao Zhao ◽  
Aliakbar Momeni ◽  
Yiqing Wang ◽  
Wenzhuo Cao
Keyword(s):  
Failure Analysis ◽  
Elliptical Hole ◽  
Impact Loads ◽  
Fracture Failure
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