Magnetoresistive Switch Effect and Its Application to Magnetic Field Sensors
2005 ◽
Vol 475-479
◽
pp. 2223-2226
Keyword(s):
Magnetoresistive switch effect (MRS effect) devices containing two gold (Au) electrodes with a gap less than 2 µm were successfully fabricated on semi-insulting GaAs substrates by wet etching method. Huge MRS effect was observed. Magnetoresistance (MR) ratio reached 1,000,000% under the magnetic filed of 1.5 T when the devices were operated just above the threshold voltage. The magnetic field sensitivity at small magnetic fields was significantly improved. MR ratio of more than 1000% was achieved at 0.03 T. A relative high MR ratio of 100,000% under the magnetic filed of 1.5 T was also achieved when the devices operating before the threshold voltage.
2015 ◽
Vol 12
(103)
◽
pp. 20141155
◽
2006 ◽
Vol 113
◽
pp. 459-464
◽
2008 ◽
Vol 4
(S254)
◽
pp. 95-96
1971 ◽
Vol 43
◽
pp. 329-339
◽
Keyword(s):
1970 ◽
Vol 39
◽
pp. 168-183
Keyword(s):
Keyword(s):
2012 ◽
Vol 27
(40)
◽
pp. 1250233
◽
Keyword(s):