Metal Bonding in SiC Based Substrates
2005 ◽
Vol 483-485
◽
pp. 781-784
◽
Keyword(s):
X Ray
◽
QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W5Si3. The film is discontinuous and strained. Annealing releases stress at least partially.
1991 ◽
Vol 35
(A)
◽
pp. 593-599
◽
2014 ◽
Vol 70
(2)
◽
pp. 275-282
◽
2019 ◽
Vol 20
(1)
◽
pp. 543-556
◽
2012 ◽
Vol 463-464
◽
pp. 777-780
◽
2005 ◽
Vol 475-479
◽
pp. 4175-4178
◽
1982 ◽
Vol 40
◽
pp. 722-723
◽