scholarly journals The Effects of Ba0.85Ca0.15Zr0.1Ti0.9O3 Addition on the Phase, Microstructure, and Thermoelectric Properties of Ca3Co4O9 Ceramics

Author(s):  
Panupong JAIBAN ◽  
Pimpilai WANNASUT ◽  
Anucha WATCHARAPASORN

Abstract In this work, the influences of Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) addition on phase, microstructure, and thermoelectric properties of Ca3Co4O9 (CCO) were investigated. (1-x)CCO-(x)BCZT ceramics where x = 0, 0.003, 0.005, and 0.010 were fabricated successfully via a conventional solid-state sintering at 1,223 K for 24 hrs. The substitution of BCZT introduced the chemical defects (V''Co, V'''Co, V''Ca) in CCO ceramic, which increased charge carrier concentration and enhanced the electrical conductivity. The presence of Co3+ improved the Seebeck coefficients of CCO ceramic. The thermal conductivity of CCO ceramic decreased when BCZT was added. The addition of BCZT at x = 0.010 promoted the highest thermoelectric power factor (PF~235 mW/mK2), and the highest figure of merit (ZT~0.5) at 800 K, which present this ceramic an alternative p-type oxide thermoelectric for a high-temperature thermoelectric device.

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.


2001 ◽  
Vol 16 (12) ◽  
pp. 3343-3346 ◽  
Author(s):  
X. F. Tang ◽  
L. M. Zhang ◽  
R. Z. Yuan ◽  
L. D. Chen ◽  
T. Goto ◽  
...  

Effects of Ba filling fraction and Ni content on the thermoelectric properties of n-type BayNixCo4−xSb12 (x = 0−0.1, y = 0−0.4) were investigated at temperature range of 300 to 900 K. Thermal conductivity decreased with increasing Ba filling fraction and temperature. When y was fixed at 0.3, thermal conductivity decreased with increasing Ni content and reached a minimum value at about x = 0.05. Lattice thermal conductivity decreased with increasing Ni content, monotonously (y ≤ 0.1). Electron concentration and electrical conductivity increased with increasing Ba filling fraction and Ni content. Seebeck coefficient increased with increasing temperature and decreased with increasing Ba filling fraction and Ni content. The maximum ZT value of 1.25 was obtained at about 900 K for n-type Ba0.3Ni0.05Co3.95Sb12.


2011 ◽  
Vol 695 ◽  
pp. 65-68 ◽  
Author(s):  
Kwan Ho Park ◽  
Il Ho Kim

Co4-xFexSb12-ySny skutterudites were synthesized by mechanical alloying and hot pressing, and thermoelectric properties were examined. The carrier concentration increased by doping and thereby the electrical conductivity increased compared with intrinsic CoSb3. Every specimen had a positive Seebeck coefficient. Fe doping caused a decrease in the Seebeck coefficient but it could be enhanced by Fe/Sn double doping possibly due to charge compensation. The thermal conductivity was desirably very low and this originated from ionized impurity-phonon scattering. Thermoelectric properties were improved remarkably by Fe/Sn doping, and a maximum figure of merit, ZT = 0.5 was obtained at 723 K in the Co3FeSb11.2Sn0.8 specimen.


2008 ◽  
Vol 1100 ◽  
Author(s):  
Sadik Guner ◽  
Satilmis Budak ◽  
Claudiu I Muntele ◽  
Daryush Ila

AbstractMonolayer thin films of YbBiPt and YBiPt have been produced with 560 nm and 394 nm thick respectively in house and their thermoelectric properties were measured before and after MeV ion bombardment. The energy of the ions were selected such that the bombarding Si ions stop in the silicon substrate and deposit only electronic energy by ionization in the deposited thin film. The bombardment by 5.0 MeV Si ions at various fluences changed the homogeneity as well as reducing the internal stress in the films thus affecting the thermal, electrical and Seebeck coefficient of thin films. The stoichiometry of the thin films was determined using Rutherford Backscattering Spectrometry, the thickness has been measured using interferometry and the electrical conductivity was measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the measured figure of merit as a function of bombardment fluence.


2015 ◽  
Vol 29 (27) ◽  
pp. 1550159 ◽  
Author(s):  
Q. L. He ◽  
S. Y. Li ◽  
F. Gao ◽  
Z. Zhu ◽  
X. Hu ◽  
...  

The Na doping effects on the high temperature thermoelectric properties of [Formula: see text] ([Formula: see text] = 0, 0.05, 0.10, 0.15, 0.20 and 0.30) ceramics were investigated from 343 K to 973 K. When [Formula: see text], the electrical resistivity of [Formula: see text] decreases with increasing Na doping amount due to the hole-doping effect, which exhibits metallic electrical conductivity behavior. While, at the temperature range of 480–830 K, the samples with [Formula: see text] exhibit semiconductor electrical conductivity behavior instead. The Seebeck coefficients are improved by Na doping at lower temperature, but they decrease slightly at higher temperature except for [Formula: see text]. Roughly, the thermal conductivity is depressed by the doping defects. As an overall result, the dimensionless figure of merit [Formula: see text] of [Formula: see text] reaches the maximum value of 0.3 K at 973 K, which is nearly twice the value of the undoped sample [Formula: see text].


2011 ◽  
Vol 1329 ◽  
Author(s):  
Ekaterina Selezneva ◽  
Andrea Arcari ◽  
Gilles Pernot ◽  
Elisabetta Romano ◽  
Gianfranco Cerofolini ◽  
...  

ABSTRACTNanostructuring has opened new ways to increase the thermoelectric performance of a host of materials, mainly by decreasing their thermal conductivity κ while preserving the Seebeck coefficient S and electrical conductivity σ. The thermoelectric properties of degenerated polycrystalline silicon films with nanocavities (NCs) have been studied as a function of annealing temperature upon isochronous annealings in argon carried out every 50°C in the range 500 – 1000°C which were used to modify the shape of the NCs. We found that presence of the NCs had no negative effect on the electronic properties of the system. The measured values of S and σ were close to those previously reported for the blank polycrystalline silicon films with the same doping level. The thermal conductivity was also found to be close to the value measured on the blank sample, about half of the reported value in polycrystals. This led to a power factor of 15.2 mWm-1K-2 and a figure of merit of 0.18 at 300 K.


2012 ◽  
Vol 519 ◽  
pp. 188-192 ◽  
Author(s):  
P.Z. Ying ◽  
H. Zhou ◽  
Y.L. Gao ◽  
Y.Y. Li ◽  
Y.P. Li ◽  
...  

Here we report the thermoelectric properties of a wide–gap chalcopyrite compound AgInSe2, and observed the remarkable improvement in electrical conductivity σ, due to the bandgap (Eg = 1.12 eV) reduction compared to In2Se3. The improvement in σ is directly responsible for the enhancement of thermoelectric figure of merit ZT, though the thermal conductivity is much higher at 500 ~ 724 K. The maximum ZT value is 0.34 at 724 K, increasing by a factor of 4, indicating that this chalcopyrite compound is of a potential thermoelectric candidate if further optimizations of chemical compositions and structure are made.


2005 ◽  
Vol 486-487 ◽  
pp. 602-605 ◽  
Author(s):  
J.B. Park ◽  
S.-W. You ◽  
K.W. Cho ◽  
J.I. Lee ◽  
Soon Chul Ur ◽  
...  

Induction melting was attempted to prepare the undoped and Nb-doped CoSb3 compounds, and their thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by induction melting and subsequent annealing at 400°C for 2 hours in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased withincreasing temperature, indicating mixed behaviors of metallic and semiconducting conductions. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with the increasing amount of Nb doping, mainly originated from the Seebeck coefficient variation.


2021 ◽  
Author(s):  
◽  
Michael Ng

<p>Energy consumption worldwide is constantly increasing, bringing with it the demand for low cost, environmentally friendly and efficient energy technologies. One of these promising technologies is thermoelectrics in which electric power is harvested from waste heat energy. The efficiency of a thermoelectric device is determined by the dimensionless figure of merit ZT = σS²T/k where σ is the electrical conductivity, S is the thermopower, k is the thermal conductivity, and T is the average temperature. In this thesis we investigate the use of nanostructuring, which has been known to lead to significant reduction in the lattice thermal conductivity to maximise the figure of merit.  One of the most successful bulk thermoelectric materials is Bi₂Te₃, with a ZT of unity at room temperature. Here we investigate the effects of nanostructuring on the thermoelectric properties of Bi₂Te₃. Sub-100 nm ₂Te₃ nanoparticles were successfully synthesized and the figure of merit was found to be ZT ~ 5X10⁻⁵ at room temperature. The effect of a ligand exchange treatment to replace the long chain organic ligand on the as-synthesized nanoparticles with a short chain alkyl ligand was explored. After ligand exchange treatment with hydrazine the figure of merit of sub-100 nm Bi₂Te₃ was found to increase by two fold to ZT ~ 1X10⁻⁴ at room temperature. Overall the figure of merit is low compared to other nanostructured Bi₂Te₃, this was attributed to the extremely low electrical conductivity. The thermopower and thermal conductivity were found to be ~96 μVK⁻¹ and ~0.38 Wm⁻¹ K⁻¹ at 300 K respectively, which show improvements over other nanostructured Bi₂Te₃.  Further optimisation of the figure of merit was also investigated by incorporating Cu, Ni and Co dopants. The most successful of these attempts was Co in which 14.5% Co relative to Bi was successfully incorporated into sub-100 nm Bi₂Te₃. The figure of merit of nanostructured Bi₁.₇₁Co₀.₂₉Te₁.₇₁ alloy was found to increase by 40% to a ZT ~ 1.4X10⁻⁴ at room temperature. Although overall the figure of merit is low, the effect of Co alloying and hydrazine treatment shows potential as a route to optimise the figure of merit.  A potential novel material for thermoelectrics applications is inorganicorganic perovskite single crystals. Here we report a synthetic strategy to successfully grow large millimetre scale single crystals of MAPbBr₃₋xClx, FAPbBr₃₋xClx, and MAPb₁-xSnxBr₃ (MA = methylammonium and FA = formamidinium) using inverse temperature crystallisation (ITC) in a matter of days. This is the first reported case of mixed Br/Cl single crystals with a FA cation and mixed Pb/Sn based perovskites grown using ITC. The bandgap of these single crystals was successfully tuned by altering the halide and metal site composition. It was found that single crystals of FAPbBr₃₋xClx were prone to surface degradation with increased synthesis time. This surface degradation was observed to be reversible by placing the single crystals in an antisolvent such as chloroform.  A tentative model was proposed to analyse the IV characteristics of the single crystal perovskites in order to extract mobilities and diffusion lengths. The MAPbBr₃ and MAPbBr₂.₅Cl₀.₅ single crystal mobilities were found to be between 30-390 cm² V⁻¹ s⁻¹ and 10-100 cm² V⁻¹ s⁻¹ respectively, the diffusion lengths were found to be between 2-8 μm and 1-4 μm respectively. This is an improvement over polycrystalline thin film perovskites and comparable to other single crystal perovskites. The conductance of MAPb₁-xSnxBr₃ based perovskites was found to increase by 2 orders of magnitude even with just 1% of Sn incorporated. The thermal conductivity of MAPbBr₃ single crystals was found to be ~1.12 Wm⁻¹ K⁻¹ at room temperature which is reasonable low for single crystals, however no other thermoelectric properties could be measured due to the self cleaving nature of the single crystals with decreasing temperature and the high resistivity of the material.</p>


2019 ◽  
Vol 13 (02) ◽  
pp. 2051001
Author(s):  
Wei-Ying Yang ◽  
Ke-Xian Wang ◽  
Zheng Cao ◽  
Hao-Yang Yu ◽  
Xiao-Bo Ma ◽  
...  

Strontium titanate ([Formula: see text] has the advantages of being non-toxic, environmentally friendly and high-temperature stable, and has potential application in waste heat power generation at medium and high temperature. To explore the impact of TiO2 on the thermoelectric properties of SrTiO3, we synthesized TiO2/La10Nbb10-STO composite powders by hydrothermal method using precursor solution of 10[Formula: see text]mol.% La and 10[Formula: see text]mol.% Nb co-doped STO (La10Nb10-STO) containing TiO2 nanopowders with different molar ratio. After cold pressing and sintering, composite bulk materials were obtained, and their microstructure and thermoelectric transport properties were analyzed. With the increasing TiO2, although the thermal conductivity of TiO2/La10Nb10-STO composite decreased and the Seebeck coefficient increased, the minimum thermal conductivity and the maximum Seebeck coefficient were 2.54[Formula: see text][Formula: see text][Formula: see text] and 215[Formula: see text][Formula: see text]V[Formula: see text][Formula: see text], respectively, at 1000[Formula: see text]K, but the power factor decreased at high temperature due to the apparent decrease of electrical conductivity, resulting in the ZT values being lower than that of La0Nb10-STO without TiO2 addition at high temperature. Significantly, the addition of TiO2 can improve the thermoelectric performance of strontium titanate at low temperature. This approach is expected to improve the ZT of SrTiO3-based thermoelectric material through additional controlling of electrical conductivity.


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