EDS Assisted Phase Differentiation in Orientation Imaging Microscopy

2006 ◽  
Vol 509 ◽  
pp. 11-16 ◽  
Author(s):  
Stuart I. Wright ◽  
Matthew M. Nowell
Keyword(s):  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Polycrystalline Materials ◽  
Crystallographic Structure ◽  
Orientation Relationships ◽  
Multiphase Materials ◽  
Orientation Imaging ◽  
Ebsd Data ◽  
Phase Differentiation ◽  
Backscatter Diffraction

Automated Electron Backscatter Diffraction (EBSD) or Orientation Imaging Microscopy (OIM) has proven to be a viable technique for investigating microtexture in polycrystalline materials. It is particularly useful for investigating orientation relationships between phases in multiphase materials. However, when phases do not significantly vary in crystallographic structure, OIM is limited in its capability to reliably differentiate between phases. Through simultaneous collection of EBSD data and chemical data via X-Ray Energy Dispersive Spectroscopy (EDS) it is possible to dramatically improve upon the phase differentiation capabilities of either technique individually. This presentation will introduce a methodology for combining the two techniques as well as show a few example applications.

Crystallographic Mapping in Scanning and Transmission Electron Micrsocopy with Application to Semiconductor Materials

1998 ◽  
Vol 523 ◽  
Author(s):  
D. J. Dingley ◽  
S. I. Wright ◽  
D. J. Dingley
Keyword(s):  
Electron Microscope ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Lattice Parameter ◽  
Dark Field ◽  
Polycrystalline Materials ◽  
Orientation Imaging ◽  
Transmission Electron ◽  
Dark Field Microscopy ◽  
Backscatter Diffraction

AbstractThe two sister techniques, Electron Backscatter Diffraction and Orientation Imaging Microscopy which operate in a scanning electron microscope, are well established tools for the characterization of polycrystalline materials. Experiment has shown that the limiting resolution for mapping is the order of 0.1 microns. The basic techniques have been extended to include multiphase mapping. Whereas it has been possible to distinguish between phases of different crystal systems easily, it has not been possible to distinguish between phases that differ in lattice parameter by less than 5 %.An equivalent transmission electron microscope procedure has been developed. The technique couples standard hollow cone microscopy procedures with dark field microscopy. All possible dark field images that can be produced by tilting the electron beam are scanned to detect under what settings each crystal is brought into a diffracting condition. Subsequent analysis permits determination of both crystal phase and orientation.

scholarly journals New Capabilities for the TEM: Automatic Orientation Measurement and Nanocrystal Grain Maps

1999 ◽  
Vol 7 (6) ◽  
pp. 12-15 ◽  
Author(s):  
S.I. Wright ◽  
D.J. Dingley ◽  
P.R. Mainwaring
Keyword(s):  
Electron Microscope ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Polycrystalline Sample ◽  
Polycrystalline Materials ◽  
Structure Property ◽  
Orientation Measurement ◽  
Orientation Imaging ◽  
Structure Property Relationships ◽  
Submicron Structures

Orientation Imaging Microscopy (OIM) is a rapid and spatially specific technique for automatically measuring individual crystallographic orientations in a polycrystalline sample. The technique is based on electron backscatter diffraction in the scanning electron microscope (SEM). While the OIM technique has seen many applications to the investigation of structure/ property relationships in polycrystalline materials, with grain sizes ranging from millimeters to submicron, it is not easily applied to the characterization of microstructures at the nanometer scale due to the inherent resolution limitations of the SEM. Thus, a complementary technique for the transmission electron microscope (TEM) would be advantageous for the study of local orientation in submicron structures such as those that exist in nanocrystalline materials and deformed materials.

scholarly journals Fast Orientation Imaging Microscropy

2002 ◽  
Vol 10 (3) ◽  
pp. 10-14 ◽  
Author(s):  
David J. Dingley ◽  
Stuart Wright ◽  
Mathew Nowell
Keyword(s):  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Original Works ◽  
The Subject ◽  
Backscatter Diffraction

Orientation Imaging Microscopy is currently the most rapidly growing combined metallographic and crystallographic technique today. The first OIM was recorded by Wright in 1991, and published soon after, Adams et al. (1993). The technique is based on the original works on Electron Backscatter Diffraction (EBSD) by Venables and Hariand (1973), and Dingiey (1984, 1987). By 1994 some number of papers on the subject had been published. At the time of writing the authors are aware of over 600 publications that have utilized the technique and there are in excess of 400 systems in use worldwide.

Analysis of Multiphase Materials Using Electron Backscatter Diffraction

1997 ◽  
Vol 3 (S2) ◽  
pp. 561-562
Author(s):  
S.I. Wright ◽  
D.P. Field
Keyword(s):  
Crystallographic Orientation ◽  
Electron Backscatter Diffraction ◽  
Computer Control ◽  
Orientation Imaging Microscopy ◽  
Spatial Arrangement ◽  
Polycrystalline Materials ◽  
Orientation Data ◽  
Topological Features ◽  
Electron Backscatter ◽  
Backscatter Diffraction

Image analysis techniques coupled with crystallography computer codes have been used to index electron backscatter diffraction patterns (EBSPs). The ability to automatically obtain the crystallographic orientation from EBSPs coupled with computer control of the electron beam (or stage) in a scanning electron microscope (SEM) provides a much more complete description of the spatial distribution of crystallographic orientation in polycrystalline materials than has been previously attainable using conventional metallography techniques. Orientation data obtained using this technique can be used to form images reflecting the spatial arrangement of crystallographic orientation in a microstructure. Such images enable the topological features of a microstructure to be linked with the orientation characteristics. The formation of these images, as well as the data collection technique, is sometimes termed Orientation Imaging Microscopy (OIM). The utility of this technique for exploring the property/structure relationship in polycrystalline material has been demonstrated by numerous researchers. However, as yet, this technique has almost exclusively been applied to single phase materials.

Microstructure Evolution and Creep Behavior in ECAP Processed Metallic Materials

2014 ◽  
Vol 783-786 ◽  
pp. 2689-2694
Author(s):  
Vàclav Sklenička ◽  
Petr Král ◽  
Jiří Dvořák ◽  
Marie Kvapilová ◽  
Milan Svoboda
Keyword(s):  
Creep Behavior ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Microstructural Parameters ◽  
Orientation Imaging ◽  
Angular Pressing ◽  
High Purity Aluminum ◽  
Backscatter Diffraction ◽  
The Relationship ◽  
Zr Alloys

The creep behavior of high purity aluminum and copper, Al-0.2wt.%Sc and Cu-0.2wt.%Zr alloys was examined after processing by equal-channel angular pressing (ECAP) with an emphasis on the link between microstructure and creep. The microstructure was revealed by electron backscatter diffraction (EBSD) and analyzed by stereological methods. Representative microstructural parameters were obtained using orientation imaging microscopy and EBSD on the relationship between creep behavior and microstructure.

Electron backscatter diffraction analysis and orientation mapping of monazite

2010 ◽  
Vol 74 (3) ◽  
pp. 493-506 ◽  
Author(s):  
S. M. Reddy ◽  
C. Clark ◽  
N. E. Timms ◽  
B. M. Eglington
Keyword(s):  
Electron Backscatter Diffraction ◽  
Crystallographic Data ◽  
Ebsd Analysis ◽  
Crystallographic Structure ◽  
Ebsd Data ◽  
Orientation Mapping ◽  
Sample Composition ◽  
Electron Backscatter ◽  
Data Yield ◽  
Backscatter Diffraction

AbstractElectron backscatter diffraction (EBSD) analysis of monazite requires a comparison of empirically collected electron backscatter patterns (EBSPs) with theoretical diffraction data, or ‘match units’, derived from known crystallographic parameters. Published crystallographic data derived from compositionally varying natural and synthetic monazite are used to calculate ten different match units for monazite. These match units are used to systematically index EBSPs obtained from four natural monazite samples with different compositions. Analyses of EBSD data, derived from the indexing of five and six diffraction bands using each of the ten match units for 10,000 EBSPs from each of the four samples, indicate a large variation in the ability of the different match units to correctly index the different natural samples. However, the use of match units derived from either synthetic Gd or Eu monazite crystallographic data yield good results for three of the four analysed monazites. Comparison of sample composition with published monazite compositions indicates that these match units are likely to yield good results for the EBSD analysis of metamorphic monazite. The results provide a clear strategy for optimizing the acquisition and analysis of EBSD data from monazite but also indicate the need for the collection of new crystallographic structure data and the subsequent generation of more appropriate match units for natural monazite.

Metallographic Preparation of Zn-21Al-2Cu Alloy for Analysis by Electron Backscatter Diffraction (EBSD)

2014 ◽  
Vol 20 (4) ◽  
pp. 1276-1283
Author(s):  
M. G. Rodríguez-Hernández ◽  
E. E. Martínez-Flores ◽  
G. Torres-Villaseñor ◽  
M. Dolores Escalera
Keyword(s):  
Tensile Testing ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Research Groups ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Metallographic Preparation ◽  
Ebsd Technique ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

AbstractSamples of Zn-21Al-2Cu alloy (Zinalco) that will be heavily deformed were prepared using five different manual mechanical metallographic methods. Samples were analyzed before tensile testing using the orientation imaging microscopy-electron backscatter diffraction (OIM-EBSD) technique. The effect of type and particle size during the final polishing stages for this material were studied in order to identify a method that produces a flat, damage free surface with a roughness of about 50 nm and clean from oxide layers, thereby producing diffraction patterns with high image quality (IQ) and adequate confidence indexes (CI). Our results show that final polishing with alumina and silica, as was previously suggested by other research groups for alloys that are difficult to prepare or alloys with low melting point, are not suitable for manual metallographic preparation of this alloy. Indexes of IQ and CI can be used to evaluate methods of metallographic preparation of samples studied using the OIM-EBSD technique.

Investigation of Aluminum Thin Films Using Electron Backscatter Diffraction and the New Technique of Orientation Imaging Microscopy

1995 ◽  
Vol 403 ◽  
Author(s):  
D. J. Dingley ◽  
D. P. Field
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Grain Structure ◽  
Local Texture ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Individual Grains ◽  
Backscatter Diffraction

AbstractAluminum thin films deposited onto silicon substrates coated with silicon dioxide or a layered structure of titanium and titanium nitride have been investigated using the combined techniques of electron backscatter diffraction and orientation imaging microscopy. By these methods the local texture and spatial distribution of texture components was established. It was observed that whereas the material exhibited an overall <111> texture with the in-plane direction <110> uniformly distributed, there were variations in the local texture and distribution of orientations with clustering of grains of similar orientation. Individual grains within the clusters were nearly perfect and varied in orientation by only a few degrees. The effective grain size differed greatly on whether the cluster size of similarly oriented grains or the diameter of individual grains within the cluster was considered to constitute the grain structure. No strong bias was found in favor of coincident site oriented grain pairs though in some cases the frequency of occurrence of low angle boundaries was less than is expected on a purely random basis. Additional experiments were carried out in order to establish the suitability of orientation imaging microscopy for microstructure characterization of interconnect lines in integrated semiconductor device technology.

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