Synthesis of BiFeO3 Ceramic Targets and Thin Film Deposition by Laser Ablation

2006 ◽  
Vol 514-516 ◽  
pp. 328-332 ◽  
Author(s):  
Cezarina C. Mardare ◽  
Pedro B. Tavares ◽  
Andréi I. Mardare ◽  
Raluca Savu
Keyword(s):  
Laser Ablation ◽  
Laser Energy ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Combustion Method ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

A dense ceramic target of BiFeO3 was synthesized by the urea combustion method. X-ray diffraction indicates that this target is composed of a mixture of phases, the main one is BiFeO3, but Bi46Fe2O72 and Bi2Fe4O9 are also present in small amounts. The BiFeO3 target was used for depositing thin films on Pt/Ti/SiO2/Si substrates by the laser ablation technique. The depositions were made in oxygen atmosphere at pressures in the range between 5x10-3 and 2x10-2mbar, using a KrF laser. The substrate temperatures were 450 or 500°C and the laser energy, the frequency and the distance between the target and the substrate were kept constant at 125mJ, 10Hz and 4cm, respectively. After a deposition time of 30minutes the thickness of the films was approximately 400nm. Some of the films were heat-treated in situ, in 100mbar O2 for 30minutes, at the same temperatures used for deposition. X-ray diffraction results show the BiFeO3 phase, as well as some Bi46Fe2O72 and Bi2Fe4O9. The films were crystallized without any preferential orientation, but the ones made at 2x10-2mbar and 450°C were partially amorphous. For measuring the ferroelectric hysteresis loops, either Al top electrodes were deposited by thermal evaporation or Pt, by sputtering. The distorted shapes of the hysteresis loops obtained indicated that the films exhibit weak ferroelectric properties and high leakage current values.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

Study of Carbon Thin Film Deposition on Various Buffer Layer as Characterized by X-Ray Diffraction and Raman Spectroscopy

2015 ◽  
Vol 1112 ◽  
pp. 106-109
Author(s):  
Angga Virdian ◽  
Heldi Alfiadi ◽  
Yudi Darma
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Buffer Layer ◽  
Raman Spectra ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Thin Film ◽  
Carbon Based

Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.

Characterization of Infrared Materials by X-Ray Diffraction Techniques

1986 ◽  
Vol 90 ◽  
Author(s):  
W. J. Takei ◽  
N. J. Doyle
Keyword(s):  
Growth Process ◽  
Process Development ◽  
Thin Film Deposition ◽  
Critical Issue ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compositional Variations ◽  
Infrared Materials

ABSTRACTX-ray diffraction techniques have proved invaluable in the characterization of infrared materials, particularly those prepared by thin film deposition techniques such as molecular beam epitaxy, MBE. The techniques are sufficiently sensitive and rapid to provide the information feedback required for efficient optimization of the growth process. They are nondestructive and permit the correlation with results on the same sample obtained by other characterization techniques such as those being described at this Symposium. Depending on the development status of the growth technology, the information to be acquired includes presence of twinning, quality, and type of epitaxial orientation, strains, and compositional variations. A critical issue in the application of these materials in detector arrays is the question of uniformity control, both laterally and in depth. The techniques to be described include not only modern x-ray topographic and multiple crystal diffractometric techniques but particularly for the early stages of growth process development, classical photographic ones such as the oscillation and Weissenberg methods. Examples of these various aspects are presented with emphasis placed on the characterization involved in MBE growth of HgCdTe films.

scholarly journals Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Mircea Nicolaescu ◽  
Cornelia Bandas ◽  
Corina Orha ◽  
Viorel Şerban ◽  
Carmen Lazău ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Morphological Characteristics ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Synthesis Process ◽  
Second Step ◽  
X Ray Diffraction ◽  
Uv Photodetector ◽  
X Ray

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

scholarly journals Ferroelectric and Dielectric Properties of ZnFe2O4-Pb(ZrTi)O3Multiferroic Nanocomposites

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shrabanee Sen ◽  
Sk. Md. Mursalin ◽  
M. Maharajan
Keyword(s):  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Nanosized Powders ◽  
X Ray ◽  
Magnetoelectric Composites ◽  
Gel Technique

Magnetoelectric composites of zinc ferrite and soft lead zirconate titanate (PZT) having formula 0.5 ZnFe2O4-0.5 PZT were synthesized by sol-gel technique. X-ray diffraction analysis was carried out to confirm the coexistence of individual phase. TEM micrographs were taken to confirm the formation of nanosized powders and SEM micrographs were taken to study the morphology of the sintered pellets. Dielectric and P-E hysteresis loops were recorded, respectively, to confirm the ferroelectric properties of the composites.

Temperature-dependent ferroelectric properties of (Pb0.75La0.25)TiO3 thin films

2004 ◽  
Vol 19 (6) ◽  
pp. 1638-1642
Author(s):  
S.T. Zhang ◽  
J.P. Li ◽  
Y.F. Chen ◽  
Z.G. Liu ◽  
N.B. Ming
Keyword(s):  
Thin Films ◽  
Fatigue Resistance ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Saturated Polarization

Polycrystalline (Pb0.75La0.25)TiO3 (PLT25) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. The room-temperature structures and dielectric properties are studied by x-ray diffraction, scanning electron microscopy, and HP4294A impedance/phase analyzer. The temperature-dependent ferroelectric properties are systematically investigated by using a RT66A ferroelectric tester combined with a temperature-controllable vacuum chamber. For well-saturated hysteresis loops, with the temperature decrease from 295 to 97 K, the coercive field (Ec) and remanent polarization (Pr) increase and the saturated polarization (Ps) is almost temperature-independent. However, this is not the case for the unsaturated hysteresis loops. Temperature-dependent fatigue-resistance of the PLT25 films is also experimentally established: after 2.22 × 109 switching cycles, the nonvolatile polarizationdecreases 38% when measured at room-temperature and it decreases 15% at 97 K. The nature and population of point defects and their effects on the subtle variations of the Ec, Ps, Pr, and fatigue-resistance against temperature are discussed in detail.

scholarly journals Effect of In-Incorporation and Annealing on CuxSe Thin Films

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3810
Author(s):  
Algimantas Ivanauskas ◽  
Remigijus Ivanauskas ◽  
Ingrida Ancutiene
Keyword(s):  
Optical Properties ◽  
Dendritic Structure ◽  
Thin Film Deposition ◽  
Nitrogen Atmosphere ◽  
Copper Selenide ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ionic Adsorption ◽  
Selenide Thin Film

A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu0.87Se, In2Se3, and CuInSe2. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors.

scholarly journals A Novel Approach for Fabricating LaMnO3 Thin Films Using Combined Microwave Combustion and Pulsed Electron Deposition Techniques

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Thi Ha Tran ◽  
Thi Trung Anh Tang ◽  
Nguyen Hai Pham ◽  
Thanh Cong Bach ◽  
Cong Doanh Sai ◽  
...  
Keyword(s):  
Thin Films ◽  
Flux Ratio ◽  
Combustion Method ◽  
Thin Film Deposition ◽  
Discharge Voltage ◽  
Film Deposition ◽  
X Ray ◽  
Microwave Combustion ◽  
Novel Approach ◽  
Pulsed Electron Deposition

LaMnO3 (LMO) nanopowder was synthesized by the microwave combustion method using glycine and nitrate salts of La and Mn as precursors. The as-prepared LMO powder was pressed at high pressure and annealed at 1000°C for 8 hours to make a target for thin film deposition. The structural and elemental analysis was obtained by X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). Thin films of LMO were fabricated using pulsed electron deposition (PED) at room temperature. The effects of discharge voltage and oxygen/argon flux ratio on the produced thin films were studied. The study shows that stoichiometry and structure of the target was preserved well in the thin films prepared with a discharge voltage from 14 to 15 kV, while the oxygen/nitrogen flux ratio did not show a clear effect on the quality of thin films.

Effects of Single-Substitution and Co-Substitution on BiFeO3 Nanoparticles

2014 ◽  
Vol 602-603 ◽  
pp. 23-26
Author(s):  
Xing Ao Li ◽  
Wei Wei Mao ◽  
Xing Fu Wang ◽  
Xi Wang Wang ◽  
Yong Tao Li ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Rhombohedral Structure ◽  
X Ray Diffraction ◽  
Structure Transition ◽  
X Ray ◽  
Multiferroic Bifeo ◽  
Structure Surface ◽  
Magnetic Hysteresis Loops

Multiferroic BiFeO3 nanoparticles have been prepared by solgel method. The effects of single-substituted and co-substituted on the structures and magnetism of all the samples are investigated systematically. X-ray diffraction and Raman spectra results confirm that the samples simulate from a distorted rhombohedral structure to a cubic structure. Surface morphology of the samples were examined by scanning electron microscope (SEM). The ferroelectric and magnetic hysteresis loops shows coexistence of magnetism and ferroelectricity in the room temperature. The structure transition may be the main cause for the origin of improved magnetic and ferroelectric properties.

High Intensity Laser Ablation of Titanium Target

2011 ◽  
Vol 227 ◽  
pp. 57-61 ◽  
Author(s):  
Kenza Yahiaoui ◽  
Tahar Kerdja ◽  
Smail Malek
Keyword(s):  
Laser Ablation ◽  
Laser Energy ◽  
Thin Film Deposition ◽  
Ablation Rate ◽  
Film Deposition ◽  
Laser Irradiance ◽  
Phase Explosion ◽  
Sem Images ◽  
Laser Breakdown ◽  
The Impact

In thin film deposition by pulsed laser ablation (PLD), the mass ablation rate depends on laser energy, on the pulse duration and on the thermodynamic properties of the ablated materials. In order to optimize the PLD technique and the films quality, the evolution of the amount of the ejected materials with laser irradiance, the SEM images of the laser impacts on the target and the ion yield in the vapour plume, were used. This allows us to predict the different mechanisms that are responsible to mass ablation according to laser irradiance which was ranging from 1.5108W/cm2 to 5.51010 W/cm2. Three diagnostics devices have been used: A quartz microbalance placed in front of the target, where the maximum of materials ejection occurs, a Scanning Electron Microscope (SEM) was used to show the impact morphology evolution with the laser irradiance and a charge collector, biased at negative voltage, was used to measure the ions yield and ions kinetic energy. The results show the evolution from normal evaporation mechanism at moderate laser irradiance to phase explosion mechanism at higher laser irradiance. Laser irradiance threshold for phase explosion onset is well determined by microbalance measurement, SEM micrographic pictures and the laser breakdown in the vapour plume was determined by the charge collector.

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