Fabrication of TiAl Target by Mechanical Alloying and Applications in Physical Vapour Deposition Coating

2007 ◽  
Vol 534-536 ◽  
pp. 805-808 ◽  
Author(s):  
Brian Gabbitas ◽  
Peng Cao ◽  
Stella Raynova ◽  
De Liang Zhang
Keyword(s):  
Mechanical Alloying ◽  
Vapour Deposition ◽  
Hot Isostatic Pressing ◽  
Target Material ◽  
Deposition Process ◽  
Physical Vapour Deposition ◽  
Pvd Coatings ◽  
Mechanically Alloyed ◽  
X Ray ◽  
High Microhardness

The research involves the development of a powder metallurgical route for producing good quality TiAl targets for making physical vapour deposition (PVD) coatings. Mixtures of elemental titanium and aluminium powders were mechanically milled using a novel discus milling technique under various conditions. Hot isostatic pressing (HIP) was then employed for consolidation of the mechanically alloyed powders. A cathodic arc vapour deposition process was applied to produce a TiAlN coating. A microstructural examination was conducted on the target material and PVD coatings, using X-ray diffractometry (XRD), X-ray photoelectron spectrometry (XPS) and scanning electron microscopy (SEM). It has been found that combining mechanical alloying and HIP enable us to produce a fairly good quality of TiAl based target. The PVD coatings obtained from the TiAl target showed very high microhardness values.

scholarly journals Synthesis of Pt nanowires with the participation of physical vapour deposition

Open Physics ◽  
2016 ◽  
Vol 14 (1) ◽  
pp. 159-165
Author(s):  
Leszek A. Dobrzański ◽  
Marek Szindler ◽  
Mirosława Pawlyta ◽  
Magdalena M. Szindler ◽  
Paulina Boryło ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Transmission Electron ◽  
Conformal Coverage ◽  
Pt Nanowires

AbstractThe following paper presents the possibility of formation of Pt nanowires, achieved by a three-step method consisting of conformal deposition of a carbon nanotube and conformal coverage with platinum by physical vapour deposition, followed by removal of the carbonaceous template. The characterization of this new nanostructure was carried out through scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

Reactive Al-Li Powders Prepared by Mechanical Alloying

2005 ◽  
Vol 896 ◽  
Author(s):  
Xiaoying Zhu ◽  
Mirko Schoenitz ◽  
Vern K. Hoffmann ◽  
Edward L. Dreizin
Keyword(s):  
Mechanical Alloying ◽  
Amorphous Material ◽  
Relaxation Processes ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
Exothermic Reactions ◽  
X Ray ◽  
Δ Phase ◽  
Endothermic Reactions ◽  
Synthesized Materials

AbstractMechanically alloyed powders with the composition Al0.7Li0.3 are synthesized. Materials milled for different times are studied using electron microscopy, x-ray diffraction, and thermal analysis. A solid solution of Li in Al (α-phase) is formed with as much as 10 at % of dissolved Li. The LiAl intermetallic δ-phase is readily produced by mechanical alloying but disappears after extended milling times. The final product of milling for 102 hours consists of an x-ray amorphous phase. Mechanically alloyed powders heated in inert environment exhibit several weak exothermic reactions between 420 and 700 K, and two endothermic reactions, around 810 and 870 K. All the observed relaxation processes become less pronounced and eventually become undetectable as the milling time increases and an amorphous material is produced. Ignition experiments performed for the powders coated on an electrically heated filament showed that the powders ignited in the vicinity of 1250 K. An experimental setup for studying combustion of reactive mechanically alloyed powders is developed and initial experimental results are described.

CHARACTERIZATION OF TiCN COATING SYNTHESIZED BY THE PLASMA ENHANCED PHYSICAL VAPOUR DEPOSITION PROCESS ON A CEMENTED CARBIDE TOOL

2018 ◽  
Vol 25 (08) ◽  
pp. 1950028 ◽  
Author(s):  
T. SAMPATH KUMAR ◽  
A. VINOTH JEBARAJ ◽  
K. SIVAKUMAR ◽  
E. SHANKAR ◽  
N. TAMILOLI
Keyword(s):  
Vapour Deposition ◽  
Deposition Process ◽  
Scratch Resistance ◽  
Cemented Carbide ◽  
Titanium Carbonitride ◽  
Physical Vapour Deposition ◽  
Atomic Force ◽  
Ticn Coating ◽  
Coated Film ◽  
Cemented Carbide Tool

In the present investigation, Titanium Carbonitride (TiCN) coating was deposited on a cemented carbide substrate, by means of Plasma Enhanced Physical Vapour Deposition (PEPVD) process. The microstructure of the deposited film was characterized using the Scanning Electron Microscope (SEM). Highly dense, less porous and uniformly distributed TiCN coating was observed on the coated surface. X-Ray diffraction analysis was carried out to access the phases present in the coated layer. The scratch resistance and hardness were measured using the scratch tester and Nanoindenter, respectively. The TiCN coating gives higher hardness and superior scratch resistance when compared to the substrate. The surface morphology of the coated film was characterized using the Atomic Force Microscope (AFM) and was found that the surface roughness was lesser for TiCN coating when compared to cemented carbide substrate. The intensified TiCN coating on the substrate will be useful in improving the surface behavior of cemented carbide cutting tool.

scholarly journals Formation of nanocrystalline B2-structured (Fe,Ni)Al in mechanically alloyed Fe50Al30Ni20 (wt.%) powder

2018 ◽  
pp. 66
Author(s):  
Nakib Chafika
Keyword(s):  
Dislocation Density ◽  
Mechanical Alloying ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Mechanically Alloyed ◽  
Sem Images ◽  
X Ray ◽  
Paramagnetic Behaviour ◽  
Powder Particles ◽  
Bcc Phase

B2-structured (Fe,Ni)Al was synthesised by an abrupt reaction during mechanical alloying (MA) of the elemental powders of Fe, Al and Ni. The structural, microstructural, morphological and magnetic changes occurring in the studied material during MA were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Two crystalline phases were found, a majority one corresponding to (Fe,Ni)Al bcc phase with a crystallite size less than 10 nm, a lattice strain up to 1.6% and a dislocation density of about 2.3 x1016 m-2. The other phase was in a low proportion corresponding to Fe (Al,Ni) solid solution. SEM images showed an irregular morphology of powder particles. Mossbauer spectra of the milled powders, recorded at room temperature, reveal the paramagnetic behaviour of the obtained powder. Keywords: Mechanical alloying, ternary composition, dislocation density, structural properties, paramagnetic behaviour.

scholarly journals Properties of Thin Film-Covered GaN(0001) Surfaces

2020 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapour Deposition ◽  
Metal Films ◽  
Physical Vapour Deposition ◽  
Surface Alloying ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Post Deposition

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

Low Temperature Growth of Oriented Gallium Nitride using Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Robert Leuchtner ◽  
W. Brock ◽  
Y. Li ◽  
L. Hristakos
Keyword(s):  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Target Material ◽  
Deposition Process ◽  
Film Deposition ◽  
Laser Deposition ◽  
Metal Target ◽  
X Ray

ABSTRACTOriented GaN has been successfully grown at low substrate temperatures (∼480°C) on a- and r-planes of sapphire, using the pulsed laser deposition process. We have examined the effects of several deposition parameters on film growth, including substrate temperature (∼50–500°C), ambient pressure (1×10−3 – 10 torr of NH3), and target material (Ga or GaN). The film deposition rate was typically ∼3–4 μm/hr. Film characterization was performed using x-ray diffraction (XRD), optical microscopy, x-ray photoelectron spectrometry (XPS), and atomic force microscopy (AFM). In the case of the Ga metal target, a plasma (∼500V) between the target and substrate was necessary to promote formation of the GaN phase. The ammonia ambient enhanced the nitrogen content in the films compared to vacuum deposition. In general, the GaN target yielded better quality films (smaller rocking curve widths and smoother film morphology) compared to the Ga metal target. These results suggest that pulsed laser deposition is a promising approach to fabricating high quality films of this potentially important semiconducting material.

Analysis of stress gradients in physical vapour deposition multilayers by X-ray diffraction at fixed depth intervals

2014 ◽  
Vol 47 (1) ◽  
pp. 335-345 ◽  
Author(s):  
G. Fischer ◽  
U. Selvadurai ◽  
J. Nellesen ◽  
T. Sprute ◽  
W. Tillmann
Keyword(s):  
Vapour Deposition ◽  
Steel Substrate ◽  
Polar Angle ◽  
Physical Vapour Deposition ◽  
X Ray Diffraction ◽  
Multilayer Systems ◽  
X Ray ◽  
Information Depth ◽  
Stress Profiles ◽  
Simultaneous Variation

The objective of this article is to develop and apply a model for the design and evaluation of X-ray diffraction experiments to measure phase-specific residual stress profiles in multilayer systems. Using synchrotron radiation and angle-dispersive diffraction, the stress measurements are performed on the basis of the sin2ψ method. Instead of the traditional Ω or χ mode, the experiments are carried out by a simultaneous variation of the goniometer angles χ, Ω and φGto ensure that the penetration and information depth and the measuring direction φ remain unchanged when the polar angle ψ is varied. The applicability of this measuring and evaluation strategy is demonstrated by the example of a multilayer system consisting of Ti and TiAlN layers, alternately deposited on a steel substrate by means of physical vapour deposition.

Interfacial Reactions Between Ain Substrate And 4-A Family Elements

1995 ◽  
Vol 398 ◽  
Author(s):  
Yong Du ◽  
Xiangjun He ◽  
Kun Tao
Keyword(s):  
Direct Product ◽  
Vapour Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Interfacial Reactions ◽  
Physical Vapour Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Diffraction Peaks ◽  
Xrd Patterns

ABSTRACTInterfacial reactions between A1N substrate and 4A-family elements including Ti, Zr and Hf were studied. The samples were prepared by Physical Vapour Deposition and annealed at different temperatures from 200°C to 800°C. X-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) were employed to detect the compounds formed at the interfaces between them. For Ti/AIN system, when the samples were annealed from 600°C to 800°C for 1 hour, it was found from XRD patterns that TiAl3, TiN, and Ti4N3.x including Ti2N were formed at Ti/AIN interface. With the temperature increasing, the intensities of Ti, TiN(200), Ti2N and Ti4N3.x diffraction peaks decreased while that of TiAl3 and TiN(111) increased. For Zr/AlN system, it was found that the reactions between Zr and AlN resulted in the formation of Al3Zr at about 300°C and Al2Zr at about 500°C. According to RBS spectra, it can be assumed that Al3Zr was the direct product by the reaction between AlN and Zr and Al2Zr was formed by the reaction between Al3Zr and Zr. For Hf/AlN system, however, even the sample was annealed at 800°C, no compound resulted from interfacial reactions was detected.

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