Dependence of the Dielectric Properties of Pt/ZrO2/Si Capacitors Prepared by RF-Magnetron Sputtering on the Oxygen Partial Pressure and the Annealing Temperature

2007 ◽  
Vol 544-545 ◽  
pp. 937-940
Author(s):  
Chong Mu Lee ◽  
Anna Park ◽  
Su Young Park ◽  
Min Woo Park
Keyword(s):  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Optimum Process ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flow Ratio ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Zro2 Film

Effects of the O2/Ar flow ratio in the reactive sputtering process and the annealing temperature on the structure and surface roughness of ZrO2 films and the electric properties of Pt/ZrO2/Si MOS capacitors in which the ZrO2 film was deposited by magnetron sputtering have been investigated. The optimum process parameters of the Pt/ZrO2/Si capacitor based on reactively sputtered- ZrO2 determined in such a way as the capacitance is maximized and the leakage current, the oxide charge, and the interface trap density are minimized is the O2/Ar flow ratio of 1.5 and the annealing temperature of 800°C

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

Influence of Oxygen Flow Ratio on Properties of Zn2SnO4Thin Films Deposited by RF Magnetron Sputtering

2004 ◽  
Vol 44 (1) ◽  
pp. L34-L37 ◽  
Author(s):  
Kazuo Satoh ◽  
Yoshiharu Kakehi ◽  
Akio Okamoto ◽  
Shuichi Murakami ◽  
Fumihiro Uratani ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Oxygen Flow ◽  
Flow Ratio

scholarly journals Influence of nitrogen flow ratio on properties of c-axis oriented AlN films grown by RF magnetron sputtering

2021 ◽  
Vol 127 (11) ◽  
Author(s):  
Guifeng Chen ◽  
Haoran Li ◽  
Xinjian Xie ◽  
Luxiao Xie ◽  
Endong Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Nitrogen Flow ◽  
Flow Ratio

Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

2009 ◽  
Vol 615-617 ◽  
pp. 533-536
Author(s):  
Ioana Pintilie ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
Antonella Poggi ◽  
Sandro Solmi ◽  
...  
Keyword(s):  
Low Frequency ◽  
Gate Oxide ◽  
High Accuracy ◽  
Interface Trap Density ◽  
Interface Trap ◽  
High Concentration ◽  
Mos Capacitors ◽  
Order Of Magnitude ◽  
Good Agreement

This work is focusing on the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in MOS capacitors. The N implanted sample (Ninterface ~1x1019cm-3) is compared with a non-implanted one (Ninterface ~1x1016cm-3) by means of the electron interface trap density (Dit). The Dit is determined via High-Low frequency C-V method and Thermal Dielectric Relaxation Current (TDRC) technique. It is shown that the TDRC method, mainly used so far for determination of near interface oxide charges, can be exploited to gain information about the Dit too. The determined value of Dit in the N-implanted sample is nearly one order of magnitude lower than that in the sample without N implantation. Good agreement between the TDRC results and those obtained from High-Low frequency C-V measurements is obtained. Furthermore, the TDRC method shows a high accuracy and resolution of Dit evaluation in the region close to the majority carrier band edge and gives information about the traps located into the oxide.

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