Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

2009 ◽  
Vol 615-617 ◽  
pp. 11-14 ◽  
Author(s):  
Philip Hens ◽  
Ulrike Künecke ◽  
Katja Konias ◽  
Rainer Hock ◽  
Peter J. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Structural Properties ◽  
Periodic Table ◽  
Electronic Devices ◽  
Structural Quality ◽  
Bulk Growth ◽  
Sublimation Growth ◽  
Germanium Concentration

Silicon carbide as a material for electronic devices still has substantial problems concerning its structural quality and defects. It has been shown that dopants can have a big influence on structural properties like polytype stability and dislocation statistics [1]. We will discuss the effect of an isoelectronic dopant in silicon carbide. Germanium, being a member of the 4th group in the periodic table of elements like silicon and carbon, will not influence the electrical properties of the material such as e.g. aluminum. In our experiments we reached concentrations of up to 1*1020 cm-3. We have observed an impact on the polytype stability during sublimation growth with in-situ germanium incorporation. We investigated an influence on the dislocation statistics during growth and, hence, varying germanium concentration. We found only a slight decrease in mobility during Hall measurements but no severe changes in electrical properties of the material.

In-situ observation of silicon carbide sublimation growth by X-ray topography

2001 ◽  
Vol 222 (3) ◽  
pp. 579-585 ◽  
Author(s):  
Tomohisa Kato ◽  
Naoki Oyanagi ◽  
Hirotaka Yamaguchi ◽  
Shin-ichi Nishizawa ◽  
M Nasir Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
In Situ Observation ◽  
X Ray ◽  
Sublimation Growth

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

1996 ◽  
Vol 423 ◽  
Author(s):  
R. Eckstein ◽  
D. Hofmann ◽  
Y. Makarov ◽  
St. G. Müller ◽  
G. Pensl ◽  
...  
Keyword(s):  
Mass Transfer ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Growth Process ◽  
Numerical Models ◽  
Chemical Processes ◽  
Bulk Crystals ◽  
Electrical And Optical Properties ◽  
Bulk Growth ◽  
Sublimation Growth

AbstractExperimental and numerical analysis have been performed on the sublimation growth process of SiC bulk crystals. Crystallographic, electrical and optical properties of the grown silicon carbide (SIC) crystals have been evaluated by various characterization techniques. Numerical models for the global simulation of SiC bulk growth including heat and mass transfer and chemical processes are applied and experimentally verified.

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching

2010 ◽  
Vol 645-648 ◽  
pp. 775-778 ◽  
Author(s):  
Takeshi Okamoto ◽  
Yasuhisa Sano ◽  
Hideyuki Hara ◽  
Tomoaki Hatayama ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Electrical Properties ◽  
Epitaxial Growth ◽  
Electronic Devices ◽  
Wafer Surface ◽  
Surface Roughening ◽  
Step Bunching ◽  
Before And After ◽  
Device Properties

Flat and well-ordered surfaces of silicon carbide (SiC) substrates are important for electronic devices. Furthermore, researchers have reported that 4H-SiC surface roughness increases by step-bunching during epitaxial growth and annealing. Degradation of device properties induced by surface roughening is of great concern. Therefore, a method to reduce this surface roughening is requested. We have developed a damage-free planarization method called catalyst-referred etching (CARE). In this paper, we planarized 4H-SiC substrates and evaluated the processed surface before and after the epitaxial growth. Then, we reduced the step-bunching on the epi-wafer surface and determined the electrical properties of the Schottky barrier diodes (SBD) on the processed surface.

scholarly journals Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2487 ◽  
Author(s):  
Michael Schöler ◽  
Clemens Brecht ◽  
Peter J. Wellmann
Keyword(s):  
Silicon Carbide ◽  
Point Defects ◽  
Nitrogen Vacancy ◽  
Temperature Dependent ◽  
Intrinsic Defects ◽  
Intermediate Band ◽  
Induced Changes ◽  
Cubic Silicon Carbide ◽  
Sublimation Growth

In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key distribution, just to name a few. All these applications critically depend on further understanding of defect behavior at the atomic level and the possibility to actively control distinct defects. In this work, dopants as well as intrinsic defects were introduced into the 3C-SiC material in situ during sublimation growth. A series of isochronal temperature treatments were performed in order to investigate the temperature-dependent annealing behavior of point defects. The material was analyzed by temperature-dependent photoluminescence (PL) measurements. In our study, we found a variation in the overall PL intensity which can be considered as an indication of annealing-induced changes in structure, composition or concentration of point defects. Moreover, a number of dopant-related as well as intrinsic defects were identified. Among these defects, there were strong indications for the presence of the negatively charged nitrogen vacancy complex (NC–VSi)−, which is considered a promising candidate for spin qubits.

SiC Heteropolytype Structures Grown by Sublimation Epitaxy

2007 ◽  
Vol 556-557 ◽  
pp. 161-166 ◽  
Author(s):  
Alexander A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Chemical Nature ◽  
Electronic Devices ◽  
Structural Perfection ◽  
Electrical Parameters

In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world's interest in fabrication and study of heteropolytype structures based on silicon carbide has considerably increased. This paper considers studies concerned with fabrication of various types of heterostructures constituted by different SiC polytypes by sublimation epitaxy, and their electrical parameters. It is shown that heterostructures between SiC polytypes may have a better structural perfection than those constituted by semiconductors that differ in chemical nature. A conclusion is made that SiC-based heterostructures are promising for application in modern electronic devices.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

scholarly journals A thin, deformable, high-performance supercapacitor implant that can be biodegraded and bioabsorbed within an animal body

2021 ◽  
Vol 7 (2) ◽  
pp. eabe3097
Author(s):  
Hongwei Sheng ◽  
Jingjing Zhou ◽  
Bo Li ◽  
Yuhang He ◽  
Xuetao Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Electronic Devices ◽  
Form Factors ◽  
Time Frame ◽  
Water Soluble ◽  
Two Dimensional ◽  
Medical Electronics ◽  
Thin Structure ◽  
Shed Light

It has been an outstanding challenge to achieve implantable energy modules that are mechanically soft (compatible with soft organs and tissues), have compact form factors, and are biodegradable (present for a desired time frame to power biodegradable, implantable medical electronics). Here, we present a fully biodegradable and bioabsorbable high-performance supercapacitor implant, which is lightweight and has a thin structure, mechanical flexibility, tunable degradation duration, and biocompatibility. The supercapacitor with a high areal capacitance (112.5 mF cm−2 at 1 mA cm−2) and energy density (15.64 μWh cm−2) uses two-dimensional, amorphous molybdenum oxide (MoOx) flakes as electrodes, which are grown in situ on water-soluble Mo foil using a green electrochemical strategy. Biodegradation behaviors and biocompatibility of the associated materials and the supercapacitor implant are systematically studied. Demonstrations of a supercapacitor implant that powers several electronic devices and that is completely degraded after implantation and absorbed in rat body shed light on its potential uses.

Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps

2021 ◽  
Vol 132 ◽  
pp. 105907
Author(s):  
Jiaqi He ◽  
Wei-Chih Cheng ◽  
Yang Jiang ◽  
Mengya Fan ◽  
Guangnan Zhou ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thin Barrier
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