Thick Epitaxial Layers Growth by Chlorine Addition

2009 ◽  
Vol 615-617 ◽  
pp. 55-60 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Massimo Camarda ◽  
Giuseppe Abbondanza ◽  
Danilo Crippa
Keyword(s):  
Growth Rate ◽  
Defect Density ◽  
Low Cost ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Particle Detectors ◽  
Characterization Methods ◽  
X Ray ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 µm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process.

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Very High Growth Rate Epitaxy Processes with Chlorine Addition

2007 ◽  
Vol 556-557 ◽  
pp. 157-160 ◽  
Author(s):  
Francesco La Via ◽  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

2006 ◽  
Vol 527-529 ◽  
pp. 163-166 ◽  
Author(s):  
Francesco La Via ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Schottky Diodes ◽  
Epitaxial Layers ◽  
Electrical Characteristics ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Chamber

The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 429-432 ◽  
Author(s):  
Francesco La Via ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
Alfonso Ruggiero ◽  
L. Neri ◽  
...  
Keyword(s):  
Growth Rate ◽  
Leakage Current ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Growth Parameters ◽  
Schottky Diodes ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Low Leakage ◽  
Low Leakage Current

The effects of the Si/H2 ratio on the growth of the epitaxial layer and on the epitaxial defects was studied in detail. A large increase of the growth rate has been observed with the increase of the silicon flux in the CVD reactor. Close to a Si/H2 ratio of 0.05 % silicon nucleation in the gas phase occurs producing a great amount of silicon particles that precipitate on the wafers. The epitaxial layers grown with a Si/H2 ratio of 0.03% show a low defect density and a low leakage current of the Schottky diodes realized on these wafers. For these diodes the DLTS spectra show thepresence of several peaks at 0.14, 0.75, 1.36 and 1.43 eV. For epitaxial layers grown with higher values of the Si/H2 ratio and then with an higher growth rate, the leakage current of the Schottky diodes increases considerably.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

scholarly journals Assessing the possibility of solidification and stabilization of pyrite cinder by using quicklime and fly ash

2020 ◽  
Vol 11 (2) ◽  
Author(s):  
Đurđa Kerkez ◽  
Dragana Tomašević Pilipović ◽  
Milena Bečelić‐Tomin ◽  
Nataša Slijepčević ◽  
Dunja Rađenović ◽  
...  
Keyword(s):  
Fly Ash ◽  
Low Cost ◽  
Test Results ◽  
Pyrite Cinder ◽  
X Ray Diffraction ◽  
Leaching Behavior ◽  
X Ray ◽  
Acidic Solutions ◽  
Lead And Zinc ◽  
Very High

The aim of this study was to determine the possibility of using two low-cost binders,quicklime and fly ash for the solidification/stabilization (S/S) of pyrite cinder.Pyrite cinder, used in this study, represents a remnant from sulfuric acid productionin fertilizer factory IHP “Prahovo” A.D. (Serbia), and has a very high toxicmetal content. High contents and leachability of copper, lead and zinc make thiswaste material hazardous, representing an extraordinary risk to the environment.In order to determine the leaching behavior of the S/S mixtures, four single-stepleaching tests were performed, each one having a different sort of leaching fluid(deionized water, inorganic and organic acidic solutions). X-ray diffraction (XRD),scanning electron microscope (SEM) and energy dispersive X-ray analyzer (EDS)were implemented to elucidate the mechanisms responsible for immobilization ofCu, Pb and Zn. Overall, the test results indicated that S/S treatment using bothquicklime and fly ash was effective in immobilizing these metals, especially whenthere is a higher share of binder present. Treated waste can be safe for disposal andeven considered for “controlled utilization”. Furthermore, the use of fly ash for S/Streatment of pyrite cinder solves the disposal problems of two waste types, as it alsorepresents a secondary industrial product.

Growth and Study of Thick 3C-SiC Epitaxial Layers Produced by Epitaxy on 6H-SiC Substrates

2007 ◽  
Vol 556-557 ◽  
pp. 175-178 ◽  
Author(s):  
Alexander A. Lebedev ◽  
V.V. Zelenin ◽  
Pavel L. Abramov ◽  
Elena V. Bogdanova ◽  
Sergey P. Lebedev ◽  
...  
Keyword(s):  
Growth Rate ◽  
Detailed Analysis ◽  
Electronic Devices ◽  
Maximum Growth ◽  
Maximum Growth Rate ◽  
Epitaxial Layers ◽  
X Ray ◽  
Donor Acceptor ◽  
Pl Spectrum

3C-SiC epitaxial layers with a thickness of up to 100 μm and area of ~0.3-0.5 cm2 have been grown by sublimation epitaxy on hexagonal (6H-SiC) substrates at a maximum growth rate of about 200 μm per hour. The epilayers obtained are of n-type (Nd-Na ~ 1017 -1018 cm-3). According to X-ray data, the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The donor-acceptor (Al-N) recombination band with hνmax ~ 2.12 eV predominates in the photoluminescence (PL) spectrum. A detailed analysis of a PL spectrum measured at 6 K is presented. A conclusion is made that the epitaxial layers can be used as substrates for electronic devices based on 3C-SiC.

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

2006 ◽  
Vol 911 ◽  
Author(s):  
Francesco La Via ◽  
Giuseppa Galvagno ◽  
Andrea Firrincieli ◽  
Salvatore Di Franco ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electrical Characterization ◽  
High Growth ◽  
High Growth Rate ◽  
Rate Process ◽  
Power Devices ◽  
Standard Process ◽  
Characterization Methods ◽  
Deposition Parameters ◽  
Horizontal Reactor

AbstractThe growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

Deep X-ray lithography with a tunable wavelength shifter at CAMD

1998 ◽  
Vol 5 (3) ◽  
pp. 1095-1098 ◽  
Author(s):  
C. Khan Malek ◽  
V. Saile ◽  
H. Manohara ◽  
B. Craft
Keyword(s):  
Low Cost ◽  
Critical Energy ◽  
X Ray ◽  
Wavelength Shifter ◽  
High Energies ◽  
Insertion Device ◽  
Maximum Value ◽  
Under Construction ◽  
Photon Spectra ◽  
Very High

An additional X-ray lithography facility is under construction at the Center for Advanced Microstructures and Devices. It will receive radiation from a 7.5 T superconducting three-pole wavelength shifter. The critical energy of the insertion device is tunable up to a maximum value of 11.2 keV, allowing for optimization of photon spectra to resist thickness. In particular, this hard X-ray source will allow investigation of X-ray lithography at very high energies for devices with thicknesses in excess of 1 mm, and study of low-cost mass-production concepts, using simultaneously exposed stacks of resist layers.

Epitaxial Growth of SiC in a Vertical Multi-Wafer CVD System: Already Suited as Production Process?

1999 ◽  
Vol 572 ◽  
Author(s):  
Roland Rupp ◽  
Christian Hecht ◽  
Arno Wiedenhofer ◽  
Dietrich Stephani
Keyword(s):  
Epitaxial Growth ◽  
Gas Flow ◽  
Defect Density ◽  
Schottky Diodes ◽  
Impurity Level ◽  
Thickness Variation ◽  
Epitaxial Layers ◽  
Growth Step ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTResults about a new CVD system suited for epitaxial growth on six 2 inch SiC-wafers at a time are presented. Excellent gas flow stability is achieved for this new reactor type as shown by in- situ observations of the gas flow dynamics in the reactor chamber. These experimental results agree favorably with numerical process simulation results.The epitaxial layers grown in the multi-wafer system so far show a by an order of magnitude higher background impurity level (≤1015 cm−3) as reported previously for layers grown in single-wafer systems by the authors and other groups (≤ 1014 cm−3). On the other hand, the doping homogeneity achieved until today is very encouraging. The variation on a 2 inch wafer is less than ± 20% at about 1*1016 cm−3. The wafer to wafer variation of the average doping value both within a run and from run to run is within 15 %. The reproducibility and uniformity of the layer thickness is even better (total thickness variation ≤5% on a 2 inch wafer). The surface of the epitaxial layers is very smooth with a typical growth step height of 0.5 nm (4H, 8° off orientation). First measurements on Schottky diodes build on these layers show low leakage current values indicating low point defect density in the epitaxial layers.

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