Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
2010 ◽
Vol 645-648
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pp. 1243-1246
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Keyword(s):
A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut® process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques.
1994 ◽
Vol 52
◽
pp. 860-861
2013 ◽
Vol 341
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pp. 181-210
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2004 ◽
Vol 10
(4)
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pp. 462-469
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