Innovative Curriculum on Electronic Materials Processing and Engingeering

2001 ◽  
Vol 684 ◽  
Author(s):  
Jane P. Chang
Keyword(s):  
Semiconductor Manufacturing ◽  
Chemical Engineering ◽  
Materials Science ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Dynamic Environment ◽  
Complementary Metal Oxide Semiconductor ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Solid State Physics

Recognizing that the traditional engineering education training is often inadequate in preparing the students for the challanges presented by this industry's dynamic environment and insufficient to meet the empoyer's criteria in hiring new engineers, a new curriculum on Semiconductor Manufacturing is instituted in the Chemical Engineering Department at UCLA to train the students in various scientific and technologica areas that are pertinenet to the microelectronics industries. This paper describes this new mutidisciplinary curriculum that provides knowledge and skills in semiconductor manufacturing through a series ofcourses that emphasize on the application of fundamenta engineeering disciplines in solid-state physics, materials science of semiconductors, and chemical processing. The curriculum comprises three major components:(1)a comprehensive course curriculum in semiconductor manufacturing; (2) a laboratory for hands-on training in semiconductor device fabrication; (3) design of experiments. The capstone laboratory course is designed to strengthen students’ training in “unit operatins” used in semicounductor manufacturing and allow them to practice engineering principles using the state-of-the-art experimental setup. It comprises the most comprehensive training(seven photolithographic steps and numero0us chemical processes)in fabricating and testing complementary metal-oxide-semiconductor (CMOS) devices. This curriculum is recentyaccredited by the Accreditation Board for Engineering and Technology(ABET).

scholarly journals Materials and processing approaches for foundry-compatible transient electronics

2017 ◽  
Vol 114 (28) ◽  
pp. E5522-E5529 ◽  
Author(s):  
Jan-Kai Chang ◽  
Hui Fang ◽  
Christopher A. Bower ◽  
Enming Song ◽  
Xinge Yu ◽  
...  
Keyword(s):  
Data Storage ◽  
Integrated Circuit ◽  
High Performance ◽  
Electronic Materials ◽  
Electronic Devices ◽  
Complementary Metal Oxide Semiconductor ◽  
Water Soluble ◽  
Oxide Semiconductor ◽  
Cost Structures ◽  
Functional Capabilities

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Pedagogical Theories and Strategies in Education for Materials Research: A Hierarchical Approach

1985 ◽  
Vol 66 ◽  
Author(s):  
Rustum Roy
Keyword(s):  
Chemical Engineering ◽  
Materials Science ◽  
Electronic Materials ◽  
Physical Sciences ◽  
The Third ◽  
Scientific Disciplines ◽  
Hierarchical Levels ◽  
The Status ◽  
Materials Research ◽  
The Subject

ABSTRACTThe topic of education optimized for materials research is treated In sequence at four hierarchical levels starting with the most general.Materials Research is the earliest and best developed example within the physical sciences and engineering of an integrative field (discipline?). Yet very little thought and no research (including the relevant cognitive science) has addressed the subject of how best one can educate a cadre of materials researchers. The author will adduce Inductive and anecdotal data to point some fruitful directions in reorganizing the approach to education in integrative knowledge fields.The first important thesis of this paper is that we have failed to analyze correctly the appropriate hierarchical relationships among individual scientific disciplines, engineering departments, and technological research groupings.The second major point is that education for materials research is done is several departments (materials science, physics, electrical engineering, chemical engineering, etc.) and Indeed that some mix of disciplinary roots is desirable for the materials research cadre. Improvements will be proposed in four areas: (1) Optimum content of MSE curriculum, (2) the widespread introduction of MSE minors, (3) under-representation of electronic materials, pol ymers, ceramics.The third aspect deals with the modularization of the content and teaching materials to allow adaptation to local needs in a field like materials research. The international materials community has done rather well by establishing the Materials Education Council and the Journal of Materials Education, for producing and disseminating print media. The status and usage of JME will be described.

High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

2009 ◽  
Vol 311 (7) ◽  
pp. 1962-1971 ◽  
Author(s):  
Donghun Choi ◽  
James S. Harris ◽  
Eunji Kim ◽  
Paul C. McIntyre ◽  
Joel Cagnon ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Device ◽  
Metal Oxide Semiconductor ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
High Quality ◽  
Mbe Growth

Real-space strain mapping of SOI features using microbeam X-ray diffraction

2008 ◽  
Vol 23 (2) ◽  
pp. 106-108
Author(s):  
Conal E. Murray ◽  
S. M. Polvino ◽  
I. C. Noyan ◽  
B. Lai ◽  
Z. Cai
Keyword(s):  
Semiconductor Device ◽  
Complementary Metal Oxide Semiconductor ◽  
Strain Engineering ◽  
Real Space ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Strain Mapping ◽  
Strained Si ◽  
X Ray ◽  
Out Of Plane

Synchrotron-based X-ray microbeam measurements were performed on silicon-on-insulator (SOI) features strained by adjacent shallow-trench isolation (STI). Strain engineering in microelectronic technology represents an important aspect of the enhancement in complementary metal-oxide semiconductor device performance. Because of the complexity of the composite geometry associated with microelectronic circuitry, characterization of the strained Si devices at a submicron resolution is necessary to verify the expected strain distributions. The interaction region of the SOI strain extended the SOI film thickness from the STI edge at least 25 times. Regions of 65-nm-thick SOI less than 3 μm wide exhibited an overlap in the strain fields because of the surrounding STI. Microbeam mapping of arrays containing submicron SOI features and embedded STI structures revealed the largest out-of-plane strains because of the close proximity of superimposed strain distributions induced by the STI.

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