Preparation of Ag2S Thin Films by Electro-Deposition

2010 ◽  
Vol 663-665 ◽  
pp. 910-913 ◽  
Author(s):  
Xing Yu Guo ◽  
Shu Ying Cheng ◽  
Pei Min Lu ◽  
Hai Fang Zhou
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Standard Sample ◽  
Deposition Potential ◽  
Electro Deposition ◽  
Absolute Value ◽  
X Ray ◽  
Cell Parameters ◽  
Glass Substrates ◽  
Deposited Films

Ag2S thin films were fabricated on the ITO-coated glass substrates by cathodically electro-deposition from the mixture solution including 0.01mol·L-1 AgNO3 and 0.05 mol·L-1 Na2S2O3 with pH=2.5 at room temperature. The microstructure and surface morphology of the films were investigated with the deposition potential (E) varied from -0.23V to -0.28V. The X-ray diffractograms show that the deposited films are monoclinic Ag2S with the relative deviation of cell parameters within 1.5%. The estimated cell parameters of the Ag2S films deposited at E = -0.25V are closest to those of the standard sample. The SEM pictures show that films are uniform with better compactness at more negative deposition potential, but there are some aggregation when the potential up to -0.28V. According to the AFM images, the root mean square (RMS) roughness and grain size decrease with the decreasing of potential absolute value, but they will increase when the deposition potential is too small. The best potential is -0.25V for depositing Ag2S thin films.

InSe Nanothin Film with Ar-Gas Low Vacuum Pressure

2014 ◽  
Vol 606 ◽  
pp. 15-18
Author(s):  
Falah I. Mustafa ◽  
Mooroj Ali
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Room Temperature ◽  
Energy Gap ◽  
X Ray Diffraction ◽  
Argon Gas ◽  
X Ray ◽  
Glass Substrates ◽  
Deposited Film ◽  
Deposited Films

InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In2Se3and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In3Se2is polycrystalline and the values of energy gap are Eg=1.44eV for In2Se3, Eg=1.16eV for InSe and Eg=0.78eV for In3Se2. The same technique used with insert Argon gas at pressure 0.1 mbar where InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In2Se3are amorphous in nature while the as-deposited film InSe and In3Se2are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are Eg=1.55eV for InSe and Eg=1.28eV for In3Se2. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Growth of Copper Telluride Thin Films using Electrodeposition

2018 ◽  
Vol 21 (1) ◽  
pp. 015-019
Author(s):  
P. Jeyakumar ◽  
S. Thanikaikarasan ◽  
B. Natarajan ◽  
T. Mahalingam ◽  
Luis Ixtlilco
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Cyclic Voltammetric ◽  
Voltammetric Analysis ◽  
Copper Telluride ◽  
X Ray ◽  
Microstructural Parameters ◽  
Glass Substrates ◽  
Deposited Films

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electrodeposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.

Effect of Temperature on Structural and Optical Properties of Chemically Deposited Tin Sulfide Thin Films Suitable for Photovoltaic Structures

2013 ◽  
Vol 665 ◽  
pp. 93-100 ◽  
Author(s):  
T.H. Patel
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Xrd Analysis ◽  
Buffer Layers ◽  
Effect Of Temperature ◽  
Tin Sulfide ◽  
X Ray ◽  
Glass Substrates ◽  
Average Grain Size ◽  
Deposited Films

SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy band gap phases e.g. SnS2, Sn2S3and Sn/S/O alloys of interest as Cd-free buffer layers for use in thin film solar cells. Thin films of tin sulphide have been deposited using CBD at three different bath temperatures (27, 35 and 45 °C) onto microscope glass substrates. The X ray diffraction (XRD) analysis of the deposited films reveled that all films has orthorhombic SnS phase as dominant one with preferred orientations along (111) direction. The temperature influence on the crystalline nature and the presence of other phases of SnS has been observed. The average grain size in the films determined from Scherers formula as well as from Williamson-Hall-plot method agrees well with each other. Energy dispersive X-ray (EDAX) analysis used to determine the film composition suggested that films are almost stoichiometric. The scanning electron microscopy (SEM) reveals that deposited films are pinhole free and consists of uniformly distributed spherical grains. The optical analysis in the 200-1200 nm range suggests that direct allowed transitions are dominant in the absorption process in the films with variation in the band gap (~1.79 to ~2.05 eV) due to variation in deposition temperature.

Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide

2009 ◽  
Vol 294 ◽  
pp. 85-92 ◽  
Author(s):  
A.A. Ibrahim
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Room Temperature ◽  
Conduction Band Edge ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Temperature Electron ◽  
Transition Voltage ◽  
Dc Electrical Properties

Lead sulfide (PbS) thin films were prepared by thermal evaporation onto glass substrates from PbS powder. The structure and DC electrical properties of evaporated PbS thin film sandwich structures with thicknesses (d) up to 600 nm have been investigated. X-ray diffraction studies showed that the films were crystalline, with a preferred orientation in the [111] direction. Capacitance measurements indicated that the films had a relative permittivity of 5.7. Room-temperature current density-voltage (J–V) characteristics revealed ohmic conduction below a transition voltage (Vt) and a power–law dependence with an exponent of ≈ 2 at higher voltages. This behaviour was interpreted in terms of space–charge limited conductivity controlled by an exponential distribution of traps below the conduction band edge. Further evidence for this conduction process was provided by a linear dependence of Vt upon d2. Analysis of the results yielded a room temperature electron concentration no of ≈ (3.9 – 5.4) x 109 m-3.

scholarly journals Synthesis of ZnO thin film by chemical spray pyrolysis using its nano powder

2021 ◽  
Vol 49 (1) ◽  
Author(s):  
Reem S. Khaleel ◽  
◽  
Mustafa Sh. Hashim ◽  
Samer Gh. Majeed ◽  
◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Chemical Spray Pyrolysis ◽  
Sem Images ◽  
X Ray ◽  
Spray Process ◽  
Glass Substrates ◽  
Chemical Spray ◽  
Zno Powders ◽  
Deposited Films

The deposition of metal oxides powder faces several problems, including poor adhesion to the bases deposited on them, the presence of many cracks, poor thickness control, and other disadvantages. The current study gives a new and simple idea to deposit thin films using two ZnO powders with nano and microparticle sizes on glass substrates. This was done by transforming the powders to Zinc acetate and then using chemical spray pyrolysis to deposit ZnO thin films. Scanning electron microscope (SEM) images showed that the prepared film from the nanopowder (ZnONano) lost the independence of powder’s nanoparticles and became a homogeneous film with nano projections. But the deposited one from the micro powder (ZnOMicro) had both nanorods and nanoplates. The different shapes and sizes of ZnO particles in ZnOMicro powder were disappeared after the Spray process. The two deposited films were homogeneous, crack-free and there were controllable thicknesses during the deposition. X-ray spectroscopy (EDS) was used to measure weights and atomic percentages of elements for the deposited films. The structures of the deposited films were approximately identical as the X-ray diffraction (XRD) technique showed. The optical properties of these two films were studied and their parameters were measured and calculated.

Electrical Resistivity Improvement by Precipitation and Strain in Al-Cu Thin Films

2010 ◽  
Vol 305-306 ◽  
pp. 33-37 ◽  
Author(s):  
S. Lallouche ◽  
M.Y. Debili
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Room Temperature ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Hall Method

This work deals with Al-Cu thin films, deposited onto glass substrates by RF (13.56MHz) magnetron sputtering, and annealed at 773K. The film thickness was approximately the same 3-4µm. They are characterized with respect to microstructure, grain size, microstrain, dislocation density and resistivity versus copper content. Al (Cu) deposits containing 1.8, 7.21, 86.17 and 92.5at%Cu have been investigated. The use of X-ray diffraction analysis and transmission electron microscopy lead to the characterization of different structural features of films deposited at room temperature (< 400K) and after annealing (773K). The resistivity of the films was measured using the four-point probe method. The microstrain profile obtained from XRD thanks to the Williamson-Hall method shows an increase with increasing copper content.

Structural and Magnetic Properties of Annealed Vapor Deposited CoxCr1-x Thin Films

2015 ◽  
Vol 233-234 ◽  
pp. 709-712
Author(s):  
Ahmed Kharmouche
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Rutherford Backscattering Spectrometry ◽  
Gradient Field ◽  
Cell Parameters ◽  
Glass Substrates ◽  
Stiffness Constant ◽  
Structural And Magnetic Properties ◽  
Hcp Structure ◽  
Deposited Films

Abstract. We prepared, under vacuum and onto monocrystalline silicone and glass substrates, series of CoxCr1-x thin films, with x ranging from 0.80 to 0.88. The structural and magnetic properties of the as deposited films have been performed using Rutherford backscattering spectrometry (R.B.S.), X-ray diffraction (X.R.D.), Alternating Gradient Field Magnetometer (A.G.F.M.), and Brillouin Light Spectrometry (B.L.S.) techniques. Once the films being annealed under vacuum, for 1 h at 700°C, in a pre-heated furnace, their structural and magnetic properties have been performed, by these tools, as well. Significant results have been found. The as deposited films present only an HCP structure and show a preferred orientation. The annealed films present both HCP and FCC structures. The annealed films possess cell parameters greater than the bulk ones which infer that they are under a tensile stress. The cell parameters of the as deposited films are lower than the bulk ones which infer that they are under a compressive stress. Up to the annealing temperature the films are still ferromagnetic and some decrease of the magnetic moment is noticed. In addition, coercivity and squareness have been strongly improved in the annealed films comparatively to the as deposited films. Moreover, the stiffness constant, computed using Brillouin light scattering measurements and after adjustment of theoretical and experimental results, is found to be far lesser than pure Co one. These results and others will be presented and discussed.

The Effect of Sputtering Power on the Properties of One-step Deposited Cu2ZnSnSe4 Thin Films

2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Room Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Sputtering Power ◽  
One Step ◽  
Deposited Films

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.

Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
R. Chowdhury ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Microstructure And Properties ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTLaser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

Sign in / Sign up

Export Citation Format

Share Document