Structural and Magnetic Properties of Annealed Vapor Deposited CoxCr1-x Thin Films

2015 ◽  
Vol 233-234 ◽  
pp. 709-712
Author(s):  
Ahmed Kharmouche

Abstract. We prepared, under vacuum and onto monocrystalline silicone and glass substrates, series of CoxCr1-x thin films, with x ranging from 0.80 to 0.88. The structural and magnetic properties of the as deposited films have been performed using Rutherford backscattering spectrometry (R.B.S.), X-ray diffraction (X.R.D.), Alternating Gradient Field Magnetometer (A.G.F.M.), and Brillouin Light Spectrometry (B.L.S.) techniques. Once the films being annealed under vacuum, for 1 h at 700°C, in a pre-heated furnace, their structural and magnetic properties have been performed, by these tools, as well. Significant results have been found. The as deposited films present only an HCP structure and show a preferred orientation. The annealed films present both HCP and FCC structures. The annealed films possess cell parameters greater than the bulk ones which infer that they are under a tensile stress. The cell parameters of the as deposited films are lower than the bulk ones which infer that they are under a compressive stress. Up to the annealing temperature the films are still ferromagnetic and some decrease of the magnetic moment is noticed. In addition, coercivity and squareness have been strongly improved in the annealed films comparatively to the as deposited films. Moreover, the stiffness constant, computed using Brillouin light scattering measurements and after adjustment of theoretical and experimental results, is found to be far lesser than pure Co one. These results and others will be presented and discussed.

SPIN ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1440022 ◽  
Author(s):  
M. S. GABOR ◽  
M. BELMEGUENAI ◽  
F. ZIGHEM ◽  
S. M. CHERIF ◽  
T. PETRISOR ◽  
...  

This paper presents an overview concerning the electronic, structural and magnetic properties of Co 2 FeAl (CFA) thin films. We first used ab initio calculations of the electronic structure in order to discuss the half-metallicity of this compound. Involving a correlated structural-magnetic analysis, we then illustrate, experimentally, the effect of the thickness as well as the annealing temperature on the magnetic and structural properties of CFA films epitaxially grown on MgO (001) single crystal substrates. The X-ray diffraction shows that in our samples having the CFA(001)[110]// MgO (001)[100] epitaxial relation, the chemical order is enhanced as the thickness and the annealing temperature (T a ) are increased. Ferromagnetic resonance measurements reveal further dynamic magnetic properties. The gyromagnetic factor, estimated at 29.2 GHz/T, is both thickness and annealing temperature independent. The in-plane anisotropy results from the superposition between a dominant fourfold symmetry term, as expected for cubic crystal symmetry of the alloy, and a small uniaxial term. The fourfold anisotropy decreases with increasing thickness and annealing temperature. The exchange stiffness constant is thickness independent but increases with T a . In addition, the effective magnetization varies linearly with T a and with the inverse CFA thickness. This is due to the presence of perpendicular uniaxial anisotropy, estimated around -1.8 erg/cm2 at T a = 600°C and 1.05 erg/cm2 at T a = 265°C, respectively. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions which depend on the CFA thickness and T a . A Gilbert damping coefficient as low as 0.0011 is found for samples annealed at 600°C. Finally, we illustrate that these films can be used as ferromagnetic electrodes in sputtered epitaxial magnetic tunnel junctions (MTJ) based on MgO (001) tunnel barriers. These MTJs show an improvable TMR ratio around 95% at room temperature.


2013 ◽  
Vol 829 ◽  
pp. 396-400
Author(s):  
Younes Jalalizadeh ◽  
Ali Ghasemi ◽  
Gholam Reza Gordani

The main goal of this study is to investigate the structural and magnetic properties of FePt thin film with respect to the annealing tempreture. The FePt thin films were deposited by RF magnetron sputtering on Corning glass substrates at a room temperature. The films were then post-annealed at the Range of 575-675°C for 20 s by rapid thermal annealing (RTA) at a high heating ramp rate of 100 °Cs. Phase identification of thin films was performed using X-ray diffraction (XRD). With employing SEM, the size and uniformity of grains were studied. Moreover magnetic properties of annealed thin films were evaluated using a vibrating sample magnetometer (VSM). XRD results showed that the ordered FePt structure is formed at 625°C. According to the hysteresis loops, maximum out-of-plane and in-plane coercivity reached 7kOe. this value was achieve at 675°C .These results reveal its significant potential as magnetic recording media for high-density recording.


2010 ◽  
Vol 663-665 ◽  
pp. 910-913 ◽  
Author(s):  
Xing Yu Guo ◽  
Shu Ying Cheng ◽  
Pei Min Lu ◽  
Hai Fang Zhou

Ag2S thin films were fabricated on the ITO-coated glass substrates by cathodically electro-deposition from the mixture solution including 0.01mol·L-1 AgNO3 and 0.05 mol·L-1 Na2S2O3 with pH=2.5 at room temperature. The microstructure and surface morphology of the films were investigated with the deposition potential (E) varied from -0.23V to -0.28V. The X-ray diffractograms show that the deposited films are monoclinic Ag2S with the relative deviation of cell parameters within 1.5%. The estimated cell parameters of the Ag2S films deposited at E = -0.25V are closest to those of the standard sample. The SEM pictures show that films are uniform with better compactness at more negative deposition potential, but there are some aggregation when the potential up to -0.28V. According to the AFM images, the root mean square (RMS) roughness and grain size decrease with the decreasing of potential absolute value, but they will increase when the deposition potential is too small. The best potential is -0.25V for depositing Ag2S thin films.


2021 ◽  
Vol 118 (15) ◽  
pp. 152402
Author(s):  
Sudhir Regmi ◽  
Zhong Li ◽  
Abhishek Srivastava ◽  
Rabin Mahat ◽  
Shambhu KC ◽  
...  

2014 ◽  
Vol 50 (8) ◽  
pp. 1-4 ◽  
Author(s):  
Robina Ashraf ◽  
Saira Riaz ◽  
Mahwish Bashir ◽  
Usman Khan ◽  
Shahzad Naseem

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Gui-fang Li ◽  
Shibin Liu ◽  
Shanglin Yang ◽  
Yongqian Du

We prepared magnetic thin films Ni81Fe19on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm3with annealing temperatureTa=400°C, which is much higher than values of Ni81Fe19/Si(001) heterostructures withTaranging from 200°C to 400°C.


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