High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 1065-1068 ◽  
Author(s):  
Lin Cheng ◽  
Sei Hyung Ryu ◽  
Anant K. Agarwal ◽  
Michael J. O'Loughlin ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Behavior ◽  
Temperature Dependence ◽  
Threshold Voltage ◽  
Room Temperature ◽  
First Generation ◽  
Channel Mobility ◽  
Temperature Performance ◽  
Temperature Regimes ◽  
Experimental Temperature Range

We have investigated the thermal behavior of our recently developed 1200 V, 200 A 4H-SiC power DMOSFETs operating from 20°C up to 300°C. Compared to the first generation SiC DMOSFET that was commercially released early this year, this 4H-SiC power DMOSFET shows a ~ 50% reduction in the total specific on-resistance at room temperature. Temperature dependence of the key parameters of this MOSFET, such as on-resistance, threshold voltage, and the MOS channel mobility, are reported in this paper. The MOSFET showed normally-off characteristics throughout the entire experimental temperature range. Different temperature dependence of the total on-resistance in different temperature regimes has been observed.

High Temperature Performance of 3C-SiC MOSFETs with High Channel Mobility

2012 ◽  
Vol 717-720 ◽  
pp. 1109-1112 ◽  
Author(s):  
Hidetsugu Uchida ◽  
Akiyuki Minami ◽  
Toyokazu Sakata ◽  
Hiroyuki Nagasawa ◽  
Motoki Kobayashi
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Leakage Current ◽  
Gate Voltage ◽  
Bandgap Energy ◽  
Leakage Currents ◽  
Channel Mobility ◽  
Temperature Performance ◽  
Threshold Voltages ◽  
Negative Gate Voltage

Transistor performances of lateral and vertical 3C-SiC MOSFETs are investigated in the temperature range of 25 °C to 300 °C. Both types of MOSFETs operate up to 300 °C and the lateral MOSFETs possess peak channel mobility of more than 100 cm2/(Vs) even at 300 °C for the [110]- and [-110]-channel directions. In both MOSFETs, on-currents decrease monotonically and threshold voltages shift negatively as the temperature increases. The temperature dependence of on-currents in the lateral MOSFETs is weaker than that in the vertical MOSFETs. The leakage current at the negative gate voltage increases at above 200 °C. The activation energies calculated from the leakage currents at 200 °C and 300 °C are about half of the 3C-SiC bandgap energy of 2.3 eV.

9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

2007 ◽  
Vol 556-557 ◽  
pp. 771-774 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Charlotte Jonas ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
High Power ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Bias ◽  
Channel Mobility ◽  
Fast Switching ◽  
Blocking Voltage ◽  
First Time

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

ABOUT HEAT CAPACITY OF TITANIUM CARBIDE TiCx

2019 ◽  
pp. 56-66
Author(s):  
I. Khidirov ◽  
V. V. Getmanskiy ◽  
A. S. Parpiev ◽  
Sh. A. Makhmudov
Keyword(s):  
Heat Capacity ◽  
High Temperature ◽  
Titanium Carbide ◽  
Temperature Dependence ◽  
Carbon Concentration ◽  
Room Temperature ◽  
Thermodynamic Characteristics ◽  
Liquid Nitrogen Temperature ◽  
Analysis Data ◽  
Thermal Excitation

This work relates to the field of thermophysical parameters of refractory interstitial alloys. The isochoric heat capacity of cubic titanium carbide TiCx has been calculated within the Debye approximation in the carbon concentration  range x = 0.70–0.97 at room temperature (300 K) and at liquid nitrogen temperature (80 K) through the Debye temperature established on the basis of neutron diffraction analysis data. It has been found out that at room temperature with decrease of carbon concentration the heat capacity significantly increases from 29.40 J/mol·K to 34.20 J/mol·K, and at T = 80 K – from 3.08 J/mol·K to 8.20 J/mol·K. The work analyzes the literature data and gives the results of the evaluation of the high-temperature dependence of the heat capacity СV of the cubic titanium carbide TiC0.97 based on the data of neutron structural analysis. It has been proposed to amend in the Neumann–Kopp formula to describe the high-temperature dependence of the titanium carbide heat capacity. After the amendment, the Neumann–Kopp formula describes the results of well-known experiments on the high-temperature dependence of the heat capacity of the titanium carbide TiCx. The proposed formula takes into account the degree of thermal excitation (a quantized number) that increases in steps with increasing temperature.The results allow us to predict the thermodynamic characteristics of titanium carbide in the temperature range of 300–3000 K and can be useful for materials scientists.

FANSTEEL 85 METAL

Alloy Digest ◽  
1981 ◽  
Vol 30 (6) ◽  
Keyword(s):  
High Temperature ◽  
Physical Properties ◽  
Creep Strength ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Base Alloy ◽  
Heat Treating ◽  
Good Combination ◽  
Bend Strength ◽  
Temperature Performance

Abstract FANSTEEL 85 METAL is a columbium-base alloy characterized by good fabricability at room temperature, good weldability and a good combination of creep strength and oxidation resistance at elevated temperatures. Its applications include missile and rocket components and many other high-temperature parts. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and bend strength as well as creep. It also includes information on low and high temperature performance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Cb-7. Producer or source: Fansteel Metallurgical Corporation. Originally published December 1963, revised June 1981.

MAGNESIUM AZ31B

Alloy Digest ◽  
1962 ◽  
Vol 11 (9) ◽  
Keyword(s):  
High Temperature ◽  
Magnesium Alloy ◽  
Physical Properties ◽  
Room Temperature ◽  
Heat Treating ◽  
General Purpose ◽  
Bearing Strength ◽  
Temperature Performance ◽  
Wrought Magnesium Alloy ◽  
Metal Products

Abstract Magnesium AZ31B is a general purpose wrought magnesium alloy for room temperature service. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive, shear, and bearing strength as well as creep. It also includes information on low and high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: Mg-53. Producer or source: The Dow Metal Products Company.

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

1996 ◽  
Vol 35 (Part 1, No. 11) ◽  
pp. 5711-5713 ◽  
Author(s):  
Masahiko Kondow ◽  
Shin'ichi Nakatsuka ◽  
Takeshi Kitatani ◽  
Yoshiaki Yazawa ◽  
Makoto Okai
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Laser Diodes ◽  
Temperature Performance

Silicon Carbide Vertical JFET Operating at High Temperature

2008 ◽  
Vol 600-603 ◽  
pp. 1063-1066 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Keith P. Hilton ◽  
Nicolas G. Wright ◽  
Michael J. Uren ◽  
A.G. Munday ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Temperature Dependence ◽  
Power Law ◽  
Current Density ◽  
Electron Mobility ◽  
Room Temperature ◽  
Protective Atmosphere ◽  
State Resistance ◽  
A Current

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p+-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RO-S ) of 8 mW×cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 °C and without any protective atmosphere. The change of RO-S with temperature rising from 20 to 500 °C followed a power law (~ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC.

Effect of percolation path on temperature dependence of threshold voltage variability in bulk MOSFETs

2021 ◽  
Author(s):  
Tomoko Mizutani ◽  
Kiyoshi Takeuchi ◽  
Takuya Saraya ◽  
Hiroshi Oka ◽  
Takahiro MORI ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Threshold Voltage ◽  
Cryogenic Temperature ◽  
Room Temperature ◽  
Constant Current ◽  
Percolation Path ◽  
Temperature Dependences ◽  
Random Dopant Fluctuations ◽  
Random Dopant

Abstract Threshold voltage variability of bulk MOSFETs was measured at room temperature and cryogenic temperature and compared. It is found that the temperature dependences of threshold voltage defined by extrapolation (VTHEX) and threshold voltage defined by constant current (VTHC) show different behaviors and the percolation path in the channel, which is caused by potential valley due to random dopant fluctuations, weakens the temperature dependence of VTHC.

Elevated Temperature Fiber Push-Out Testing

1994 ◽  
Vol 365 ◽  
Author(s):  
J.I. Eldridge
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Experimental Procedure ◽  
Composite Systems ◽  
Test Methodology ◽  
Reinforced Composite ◽  
Critical Issues ◽  
Push Out ◽  
Potential Use

ABSTRACTThe potential use of fiber-reinforced composite materials for high temperature applications makes the development of interface test methodology at those high temperatures very desirable. A facility for performing high temperature fiber push-out tests will be described with emphasis on critical issues in experimental procedure. Examples from several composite systems illustrate the temperature dependence and environmental sensitivity of fiber debonding and sliding. Interpretation of the temperature dependence will be made primarily in terms of changes in residual stresses along with additional effects due to changes in matrix ductility and interfacial wear. Examples will show that high temperature fiber push-out testing can often distinguish between chemical and frictional fiber/matrix bonding in cases where room temperature only testing cannot.

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