9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on

2007 ◽  
Vol 556-557 ◽  
pp. 771-774 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Charlotte Jonas ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
High Power ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Bias ◽  
Channel Mobility ◽  
Fast Switching ◽  
Blocking Voltage ◽  
First Time

SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs on 4H-SiC are reported in this paper. A differential on-resistance of ~ 88 m(cm2 at a gate bias of –20 V is achieved at 25°C, and decreases to ~24.8 m(cm2 at 200°C. The device exhibits a blocking voltage of 9 kV with a leakage current density of 0.1 mA/cm2. The hole channel mobility is 6.5 cm2/V-s at room temperature with a threshold voltage of –6.5 V resulting in enhanced conduction capability. Inductive switching tests have shown that IGBTs feature fast switching capability at both room and elevated temperatures.

Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs

2006 ◽  
Vol 527-529 ◽  
pp. 1261-1264 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Sumi Krishnaswami ◽  
Brett A. Hull ◽  
Bradley Heath ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Gate Length ◽  
Gate Bias ◽  
Low Loss ◽  
Layer Resistance ◽  
Switching Characteristics ◽  
Mos Gate ◽  
Drift Layer

8 mΩ-cm2, 1.8 kV power DMOSFETs in 4H-SiC are presented in this paper. A 0.5 μm long MOS gate length was used to minimize the MOS channel resistance. The DMOSFETs were able to block 1.8 kV with the gate shorted to the source. At room temperature, a specific onresistance of 8 mΩ-cm2 was measured with a gate bias of 15 V. At 150 oC, the specific onresistance increased to 9.6 mΩ-cm2. The increase in drift layer resistance due to a decrease in bulk electron mobility was partly cancelled out by the negative shift in MOS threshold voltage at elevated temperatures. The device demonstrated extremely fast, low loss switching characteristics. A significant improvement in converter efficiency was observed when the 4H-SiC DMOSFET was used instead of an 800 V silicon superjunction MOSFET in a simple boost converter configuration.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

scholarly journals High Temperature Hardness of Bulk Single Crystal GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 343-348
Author(s):  
I. Yonenaga ◽  
T. Hoshi ◽  
A. Usui
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Applied Load ◽  
Elevated Temperatures ◽  
Mechanical Stability ◽  
Bulk Single Crystal ◽  
Indentation Method ◽  
First Time ◽  
High Mechanical Stability

The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.

Design and fabrication of a power Si/SiC LDMOSFET for high temperature applications

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000219-000222
Author(s):  
F. Li ◽  
P.M. Gammon ◽  
C.W. Chan ◽  
F. Gity ◽  
T. Trajkovic ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Harsh Environment ◽  
Avalanche Breakdown ◽  
Temperature Peak ◽  
Channel Mobility ◽  
First Time ◽  
Peak Field

Abstract Power Si/SiC LDMOSFET are being developed for the benefits of high temperature space and terrestrial harsh-environment applications. For the first time, high voltage devices are fabricated on a direct bonded Si/SiC substrate and characterised at room temperature. Peak field-effect channel mobility of the fabricated MOSFET reached ≈300 cm2/V.s and the avalanche breakdown was not observed up to 200 V, despite of a high leakage current in the device off-mode.

High Temperature Hardness of Bulk Single Crystal GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
I. Yonenaga ◽  
T. Hoshi ◽  
A. Usui
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Applied Load ◽  
Elevated Temperatures ◽  
Mechanical Stability ◽  
Bulk Single Crystal ◽  
Indentation Method ◽  
First Time ◽  
High Mechanical Stability

AbstractThe hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.

Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide

2015 ◽  
Vol 821-823 ◽  
pp. 741-744
Author(s):  
Toru Hiyoshi ◽  
Takeyoshi Masuda ◽  
Yu Saitoh ◽  
Keiji Wada ◽  
Takashi Tsuno ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Oxide ◽  
The Novel ◽  
Constant Voltage ◽  
Channel Mobility ◽  
Oxide Reliability ◽  
Blocking Voltage ◽  
Voltage Stress ◽  
The Stability

The authors reported the DMOSFETs fabricated on the 4H-SiC(0-33-8) in ECSCRM2012 and the novel V-groove MOSFETs, having (0-33-8) on the trench sidewall in ICSCRM2013. In this paper, we applied both the thick bottom oxide and the buried p+ regions to the V-groove MOSFETs for the protection of the trench bottom oxide. The V-groove MOSFET showed the low specific on-resistance of 3.2 mΩcm2 and the high blocking voltage of 1700 V on the bounty of the high channel mobility and the gate oxide protection, respectively. We also tested the gate oxide reliability of the V-groove MOSFET by constant-voltage stress TDDB measurement. The charge-to-breakdown was 18.0 C/cm2 at room temperature and 4.4 C/cm2 at 145°C. In addition, the stability of the threshold voltage was characterized with the VMOSFETs.

High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications

2008 ◽  
Vol 600-603 ◽  
pp. 1055-1058 ◽  
Author(s):  
Lin Cheng ◽  
Igor Sankin ◽  
Volodymyr Bondarenko ◽  
Michael S. Mazzola ◽  
James D. Scofield ◽  
...  
Keyword(s):  
High Temperature ◽  
High Power ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Vertical Channel ◽  
Gate Bias ◽  
Linear Region ◽  
Forward Current ◽  
Source Current ◽  
High Temperature Operation

In this work we have demonstrated the high-temperature operations of 600 V/50 A 4HSiC vertical-channel junction field-effect transistors (VJFETs) with an active area of 3 mm2. Specific-on resistance (RONSP) in the linear region of a single die is less than 2.6 mW.cm2 while the drain-source current is over 50 A under a gate bias (VGS) of 3 V. A reverse blocking gain of 54 is obtained at gate bias ranging from -13 V to -23 V and drain-source leakage current (IRDS) of 200 μA. To demonstrate the use of SiC VJFETs for high-power applications, eight 3 mm2 SiC VJFETs are bonded in a high current 600-V module. RONSP in the linear region of these eight-paralleled SiC VJFETs is 2.8 mW.cm2 at room temperature and increased to 5.35 mW.cm2 at an ambient temperature of 175 °C in air, corresponding to a shift of 0.61%/°C from room temperature to 175 °C. Meanwhile, the forward current is over 360 A at room temperature and reduces to 188 A at 175 °C at drain-source bias (VDS) of 5.25 V and VGS of 3 V.

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 1065-1068 ◽  
Author(s):  
Lin Cheng ◽  
Sei Hyung Ryu ◽  
Anant K. Agarwal ◽  
Michael J. O'Loughlin ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Behavior ◽  
Temperature Dependence ◽  
Threshold Voltage ◽  
Room Temperature ◽  
First Generation ◽  
Channel Mobility ◽  
Temperature Performance ◽  
Temperature Regimes ◽  
Experimental Temperature Range

We have investigated the thermal behavior of our recently developed 1200 V, 200 A 4H-SiC power DMOSFETs operating from 20°C up to 300°C. Compared to the first generation SiC DMOSFET that was commercially released early this year, this 4H-SiC power DMOSFET shows a ~ 50% reduction in the total specific on-resistance at room temperature. Temperature dependence of the key parameters of this MOSFET, such as on-resistance, threshold voltage, and the MOS channel mobility, are reported in this paper. The MOSFET showed normally-off characteristics throughout the entire experimental temperature range. Different temperature dependence of the total on-resistance in different temperature regimes has been observed.

FANSTEEL 85 METAL

Alloy Digest ◽  
1981 ◽  
Vol 30 (6) ◽  
Keyword(s):  
High Temperature ◽  
Physical Properties ◽  
Creep Strength ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Base Alloy ◽  
Heat Treating ◽  
Good Combination ◽  
Bend Strength ◽  
Temperature Performance

Abstract FANSTEEL 85 METAL is a columbium-base alloy characterized by good fabricability at room temperature, good weldability and a good combination of creep strength and oxidation resistance at elevated temperatures. Its applications include missile and rocket components and many other high-temperature parts. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and bend strength as well as creep. It also includes information on low and high temperature performance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Cb-7. Producer or source: Fansteel Metallurgical Corporation. Originally published December 1963, revised June 1981.

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