Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
2013 ◽
Vol 740-742
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pp. 251-254
Keyword(s):
Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.
2017 ◽
Vol 17
(5)
◽
pp. 3242-3246
2009 ◽
Vol 615-617
◽
pp. 105-108
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1997 ◽
Vol 144
(9)
◽
pp. 3256-3261
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2012 ◽
Vol 717-720
◽
pp. 109-112
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1998 ◽
Vol 13
(7)
◽
pp. 1738-1740
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Keyword(s):