Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

2013 ◽  
Vol 740-742 ◽  
pp. 251-254
Author(s):  
Milan Yazdanfar ◽  
Pontus Stenberg ◽  
Ian D. Booker ◽  
Ivan.G Ivanov ◽  
Henrik Pedersen ◽  
...  

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.


1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.


2009 ◽  
Vol 615-617 ◽  
pp. 105-108 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
Robert E. Stahlbush ◽  
S.L. Katz ◽  
J.M. McCrate ◽  
...  

Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in lower basal plane dislocation (BPD) densities. The dependence of BPD reduction on growth conditions was investigated using ultraviolet photoluminescence (UVPL) imaging. With this method, it was found that the dislocations were converting to threading edge dislocations throughout the thickness of the film. A high (≥ 97%) conversion efficiency was found for all films grown with this orientation. A conversion of 100% was achieved for several films without pre-growth treatments or growth interrupts.


1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.


2012 ◽  
Vol 717-720 ◽  
pp. 109-112 ◽  
Author(s):  
Milan Yazdanfar ◽  
Stefano Leone ◽  
Henrik Pedersen ◽  
Olof Kordina ◽  
Anne Henry ◽  
...  

Epitaxial growth of 4H-SiC on 8º off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 °C during the ramp up to growth temperature (1575 °C).


1998 ◽  
Vol 13 (7) ◽  
pp. 1738-1740 ◽  
Author(s):  
H. K. Woo ◽  
C. S. Lee ◽  
I. Bello ◽  
S. T. Lee

Epitaxial β–SiC film has been grown on a mirror-polished Si(111) substrate using bias-assisted hot filament chemical vapor deposition (BA-HFCVD) at a substrate temperature of 1000 °C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filaments, reacted with the graphite to form hydrocarbon radicals which further reacted with the silicon substrate and deposited as β–SiC. The effect of negatively biasing the substrate is the key factor for epitaxial growth. Under the same growth conditions without negative bias, polycrystalline β–SiC resulted.


Sign in / Sign up

Export Citation Format

Share Document