On Peculiarities of Defect Formation in 6Н-SiC Bulk Single Crystals Grown by PVT Method
2013 ◽
Vol 740-742
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pp. 43-47
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Keyword(s):
The structural defects in the single 6H-SiC crystals grown by the PVT method have been studied by the scanning electron microscopy, Raman scattering and photoluminescence techniques. The formation mechanism of the defects, micropipes and parasitic polytypes 4H and 15R, observed in the single 6H-SiC crystal has been proposed.
1990 ◽
Vol 48
(4)
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pp. 1106-1107
2007 ◽
Vol 561-565
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pp. 2163-2166
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2012 ◽
Vol 174-177
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pp. 592-595
1998 ◽
Vol 37
(Part 1, No. 12B)
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pp. 7024-7027
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2001 ◽
Vol 80
(1-3)
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pp. 130-133
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2008 ◽
Vol 13
(3)
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pp. 569-578
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