CuZnSnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Surface Morphology and Photoelectrochemical Characteristics by Argon Gas

2013 ◽  
Vol 756 ◽  
pp. 273-280 ◽  
Author(s):  
Nordin Sabli ◽  
Zainal Abidin Talib ◽  
Mat Yunus Wan Mahmood ◽  
Zulkarnain Zainal ◽  
Hikmat S. Hilal ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Room Temperature ◽  
Dilution Effect ◽  
Nucleation And Growth ◽  
Vacuum Evaporation ◽  
Inert Gas ◽  
Thermal Vacuum ◽  
Argon Gas ◽  
The One

CuZnSnSe thin films were deposited by thermal vacuum evaporation with and without argon gas stream at room temperature. Effect of argon gas on surface morphology and on photoelectrochemical (PEC) characteristics of the films was studied. The electrodes prepared under argon gas showed better enhanced characteristics, due to slower nucleation and growth due to dilution effect of the inert gas. While both electrodes showed soundly good PEC behaviors in a hexacyanoferrate(III)/hexacyanoferrate(II) redox couple, the electrode with argon gas showed 20 fold enhancement in photoactivity, compared to the one without argon gas. The results manifested thin film electrode performance can be enhanced simply by inclusion of argon inert gas inside the preparation chamber, with no need for other procedures such as annealing.

scholarly journals Preparation of superposed thin film (CdTe)1-xSex / ZnS and Studying the Effect of Concentration on Some its Electrical Properties.

2014 ◽  
Vol 11 (2) ◽  
pp. 584-589
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Dark Current ◽  
Reverse Bias ◽  
Vacuum Evaporation ◽  
X Ray Diffraction ◽  
Thermal Vacuum ◽  
Polycrystalline Structure ◽  
X Ray

Preparation of superposed thin film (CdTe)1-xSex / ZnS) with concentration of (x= 0.1, 0.3, 0.5) at a temperature of substrate (Ts= 80 0C) by using Thermal Vacuum Evaporation System. The measurement of X-ray diffraction shows that the compounds CdTe, ZnS, (CdTe)1-xSex and (CdTe)1-xSex / ZnS have a polycrystalline structure, the C-V characteristic shows that the capacitance degrease by increasing the concentration (x) in reverse bias, while the I-V characteristic shows the current dark (Id) increase in forward and reverse bias by increasing (x) and the photocurrent (Iph) increase in reverse bias by increasing the concentration (x), the values of photocurrent are greater than from the values of the dark current for all concentrations.

scholarly journals Effect of argon gas flow rate on properties of film electrodes prepared by thermal vacuum evaporation from synthesized Cu2SnSe3 source

2014 ◽  
Author(s):  
Nordin Sabli ◽  
Zainal Abidin Talib ◽  
Wan Mahmood Mat Yunus ◽  
Zulkarnain Zainal ◽  
Hikmat S. Hilal ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Vacuum Evaporation ◽  
Gas Flow Rate ◽  
Thermal Vacuum ◽  
Argon Gas

scholarly journals Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: Effect of argon gas flow rate

2014 ◽  
Vol 139 ◽  
pp. 238-243 ◽  
Author(s):  
Nordin Sabli ◽  
Zainal Abidin Talib ◽  
Wan Mahmood Mat Yunus ◽  
Zulkarnain Zainal ◽  
Hikmat S. Hilal ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Vacuum Evaporation ◽  
Gas Flow Rate ◽  
Thermal Vacuum ◽  
Argon Gas

The Low Specific Ohmic Contact Resistivity of Alloyed Ge—LOW—Content Au on Si—Implanted Electrically—Active GaAs Crystal Layers

1993 ◽  
Vol 300 ◽  
Author(s):  
Yasuyuki Saito
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Field Effect ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Field Effect Transistor ◽  
Metallic Surface ◽  
Gaas Crystal ◽  
Crystallographic Characteristics ◽  
Effect Transistor

ABSTRACTThe author did experiments on ohmic contacts between alloyed goldgerumanium (AuGe) thin film systems and Si–implanted n–type GaAs crystal conductive layers on semi–insulating wafers in order to obtain stable ohmic contacts for source–drain electrodes of Si–implanted metal–semiconductor field–effect–transistor arrays as the tools of investigating semi-insulating GaAs crystallographic–characteristics uniformity. Hot–stage–alloyed low–Ge–content (content in charged AuGe wire: < a few wt.%) AuGe/Au films and GaAs crystal n–type Si–implanted layers showed smooth metallic surface morphology (like gold reflection) and low specific ohmic resistivity (≃10exp.−6 Ω/cm2) (by G.S.Marlow and M.B.Mukunda method) at Room temperature on the condition of typical 0.25 X 10exp.13/cm2− 1 X 10exp.13/cm2 Si dosage at 100keV–200keV and 850°C-15 min capless annealing in 2.7 Torr AsH3+Ar atmosphere for S.I GaAs crystal wafers.

Effect of Annealing on the Properties of SnSe Film Prepared by Thermal Vacuum Evaporation in the Presence of Argon Gas

2014 ◽  
Vol 1024 ◽  
pp. 323-326 ◽  
Author(s):  
Nordin Sabli ◽  
Zainal Abidin Talib ◽  
Mat Yunus Wan Mahmood ◽  
Zulkarnain Zainal ◽  
Hikmat S. Hilal ◽  
...  
Keyword(s):  
Nitrogen Atmosphere ◽  
Vacuum Evaporation ◽  
Photoelectrochemical Properties ◽  
Film Electrode ◽  
Thermal Vacuum ◽  
Argon Gas ◽  
Different Temperatures

The differences in structural, compositional and photoelectrochemical properties for SnSe films annealed at different temperatures, under nitrogen atmosphere, were studied. Annealing the film electrode significantly improved its crystallinity but lowered its photoresponse. The photoresponse lowering was thus attributed to lowering in the defect concentrations.

scholarly journals EGFET pH Sensor Performance Dependence on Sputtered TiO2Sensing Membrane Deposition Temperature

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Khairul Aimi Yusof ◽  
Rohanieza Abdul Rahman ◽  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Ph Sensor ◽  
Lower Sensitivity ◽  
Ph Sensing ◽  
The One ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were sputtered by radio frequency (RF) magnetron sputtering method and have been employed as the sensing membrane of an extended gate field effect transistor (EGFET) for pH sensing detection application. The TiO2thin films were deposited onto indium tin oxide (ITO) coated glass substrates at room temperature and 200°C, respectively. The effect of deposition temperature on thin film properties and pH detection application was analyzed. The TiO2samples used as the sensing membrane for EGFET pH-sensor and the current-voltage (I-V), hysteresis, and drift characteristics were examined. The sensitivity of TiO2EGFET sensing membrane was obtained from the transfer characteristic (I-V) curves for different substrate heating temperatures. TiO2thin film sputtered at room temperature achieved higher sensitivity of 59.89 mV/pH compared to the one deposited at 200°C indicating lower sensitivity of 37.60 mV/pH. Moreover the hysteresis and the drift of TiO2thin film deposited at room temperature showed lower values compared to the one at 200°C. We have also tested the effect of operating temperature on the performance of the EGFET pH-sensing and found that the temperature effect was very minimal.

scholarly journals SnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Photoelectrochemical Efficiency by Argon Gas Condensation Method

2014 ◽  
Vol 82 (1) ◽  
pp. 25-30 ◽  
Author(s):  
Nordin SABLI ◽  
Zainal Abidin TALIB ◽  
Wan Mahmood Mat YUNUS ◽  
Zulkarnain ZAINAL ◽  
Hikmat S. HILAL ◽  
...  
Keyword(s):  
Thin Film ◽  
Vacuum Evaporation ◽  
Argon Gas ◽  
Gas Condensation ◽  
Condensation Method ◽  
Thin Film Electrodes ◽  
Snse Thin Film

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Fundamental Research into Thin Films in a Developing Country

1972 ◽  
Vol 30 ◽  
pp. 500-501
Author(s):  
J.A. Eades ◽  
E. Grünbaum
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Empirical Process ◽  
Nucleation And Growth ◽  
Research Groups ◽  
Film Research ◽  
Fundamental Research ◽  
Controlled Deposition ◽  
The One ◽  
The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

Spherulite Structures in a Melt Spun Fe-Ni Austenitic Steel

1985 ◽  
Vol 43 ◽  
pp. 52-53
Author(s):  
G. M. Michal ◽  
T. K. Glasgow ◽  
T. J. Moore
Keyword(s):  
Austenitic Steel ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Large Range ◽  
Amorphous Structure ◽  
Nucleation And Growth ◽  
Ni Alloys ◽  
Melt Spun ◽  
Crystal Fibers ◽  
Rapidly Solidified

Large additions of B to Fe-Ni alloys can lead to the formation of an amorphous structure, if the alloy is rapidly cooled from the liquid state to room temperature. Isothermal aging of such structures at elevated temperatures causes crystallization to occur. Commonly such crystallization pro ceeds by the nucleation and growth of spherulites which are spherical crystalline bodies of radiating crystal fibers. Spherulite features were found in the present study in a rapidly solidified alloy that was fully crysstalline as-cast. This alloy was part of a program to develop an austenitic steel for elevated temperature applications by strengthening it with TiB2. The alloy contained a relatively large percentage of B, not to induce an amorphous structure, but only as a consequence of trying to obtain a large volume fracture of TiB2 in the completely processed alloy. The observation of spherulitic features in this alloy is described herein. Utilization of the large range of useful magnifications obtainable in a modern TEM, when a suitably thinned foil is available, was a key element in this analysis.

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