scholarly journals Preparation of superposed thin film (CdTe)1-xSex / ZnS and Studying the Effect of Concentration on Some its Electrical Properties.

2014 ◽  
Vol 11 (2) ◽  
pp. 584-589
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Dark Current ◽  
Reverse Bias ◽  
Vacuum Evaporation ◽  
X Ray Diffraction ◽  
Thermal Vacuum ◽  
Polycrystalline Structure ◽  
X Ray

Preparation of superposed thin film (CdTe)1-xSex / ZnS) with concentration of (x= 0.1, 0.3, 0.5) at a temperature of substrate (Ts= 80 0C) by using Thermal Vacuum Evaporation System. The measurement of X-ray diffraction shows that the compounds CdTe, ZnS, (CdTe)1-xSex and (CdTe)1-xSex / ZnS have a polycrystalline structure, the C-V characteristic shows that the capacitance degrease by increasing the concentration (x) in reverse bias, while the I-V characteristic shows the current dark (Id) increase in forward and reverse bias by increasing (x) and the photocurrent (Iph) increase in reverse bias by increasing the concentration (x), the values of photocurrent are greater than from the values of the dark current for all concentrations.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Single- and Multi-target Pulsed Laser Deposition of Thin BSTO films: Preparation, Microstructure and Electrical Properties

2003 ◽  
Vol 784 ◽  
Author(s):  
Kumaravinothan Sarma ◽  
Peter Kr. Petrov ◽  
Neil McN. Alford
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Capacitor Structure

ABSTRACTA comparative study of microstructure and electrical properties of BaxSr1-xTiO3 films made by single- and multi-target pulsed laser deposition was carried out. The films were epitaxially grown on both LaAlO3 and MgO substrates. The structural properties of all samples were investigated using X-ray diffraction and Raman spectroscopy. The elemental composition of the samples was investigated using energy dispersive X-ray analysis. For electrical properties examination, a simple capacitor structure was patterned on the film surface. Thin films made using both methods exhibit similar structural and electrical properties; however the samples made by a multi-target method underwent phase transition in a broader temperature region. The results prove the possibility of using the multi-target pulse laser deposition as a more flexible method for engineering thin film stoichometry.

Use of Super-Thin Modulated Reactants to Influence Binary Intermediate Formation in Thin Film CuInSe2 Synthesis

1996 ◽  
Vol 426 ◽  
Author(s):  
M. Musialowski ◽  
S. Guffey ◽  
M. D. Hornbostel ◽  
D. C. Johnson
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Grazing Angle ◽  
Intermediate Formation ◽  
Vacuum Evaporation ◽  
X Ray Diffraction ◽  
Synthetic Pathway ◽  
X Ray ◽  
Calorimetry Data ◽  
And Calorimetry

AbstractA multilayer synthesis of polycrystalline CuInSe2 has been performed by vacuum evaporation with repeat layers thinner than 225Å. Samples deposited with different elemental sequences and repeat layer thicknesses were analyzed by x-ray diffraction as a function of annealing temperature. Samples with 225Å layers produce multiple phases in the synthetic pathway. In samples with thinner layers small amounts of In2Se3 were detected but CuInSe2 predominated. Diffraction and calorimetry data indicate that CuInSe2 and In2Se3 crystallites begin growth at room to moderate temperatures. Layering of samples was probed by grazing angle x-ray diffraction and similarly indicates interdiffusion of layers at room to moderate temperatures.

scholarly journals Depositions of In2xGa2−2xO3-based films and their application in the fabrication of a thin-film transistor

2021 ◽  
pp. 2141011
Author(s):  
Cheng-Yi Huang ◽  
Mau-Phon Houng ◽  
Sufen Wei ◽  
Cheng-Fu Yang
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Thin Film Transistor ◽  
Rf Sputtering ◽  
Deposition Process ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition Variation

Compositions of [Formula: see text] and [Formula: see text] were mixed and sintered at 1250[Formula: see text]C to fabricate [Formula: see text] and [Formula: see text] targets, and RF sputtering method was used to deposit [Formula: see text] and [Formula: see text] films by introducing pure Argon during the deposition process. After [Formula: see text] and [Formula: see text] films were deposited, we used the X-ray diffraction pattern to analyze their crystalline properties, the ultraviolet–visible-infrared spectrophotometry to measure their transmittance spectra in the wavelength range of 200–800 nm, an X-ray photoelectron spectroscopy to find their composition variation, and a Hall equipment to measure their electrical properties, including the carrier concentration, the mobility, and the resistivity. We found that the absorption edges of [Formula: see text] films were shifted to higher wavelength as [Formula: see text] value increased from 0.2 to 0.4. We also found that the Hall parameters of [Formula: see text] film could not be measured because of its high resistivity. Therefore, [Formula: see text] film was used to fabricate thin-film transistor (TFT), and the electrical properties of the fabricated TFT were also well investigated.

scholarly journals Fabrikasi Lapisan Tipis C-Cr pada Permukaan Si dengan Menggunakan Metode Sputtering

2019 ◽  
Vol 8 (3) ◽  
pp. 101-106
Author(s):  
P. Purwanto ◽  
Yunasfi ◽  
Salim Mustofa
Keyword(s):  
Thin Film ◽  
Raman Spectrum ◽  
Electrical Properties ◽  
Substrate Surface ◽  
Wave Number ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Surface Deposition ◽  
X Ray ◽  
Electrode Shape

Telah dilakukan pembuatan lapisan tipis karbon-krom (C-Cr) pada permukaan Si. Pelapisan C-Cr pada permukaan Si merupakan eletrode dalam bentuk lapisan tipis. Pengukuran struktur kristal lapisan tipis C-Cr pada permukaan Si dilakukan dengan difraksi sinar-x, pola difraksi yang nampak yaitu puncak C dan Cr. Ukuran kristalit dan regangan lapisan tipis C-Cr yaitu 18,40 A dan regangan 17,78 %. Pengukuran sifat listrk pada pelapisan karbon-krom (C- Cr) dan tanpa pelapisan meliputi konduktansi dan kapasitansi. Dari hasil pengukuran menunjukkan konduktansi lapisan tipis C-Cr dan kapasitansi menurun dengan kenaikan frekuensi, begitu juga dalam bentuk pellet C-Cr dan substrat Si. Hasil analisis permukaan dengan SEM menunjukkan lapisan tipis C- Cr. Pengujian lapisan tipis ini dilakukan guna mengetahui terbentuknya lapian tipis C-Cr dengan ditemukannnya unsur C dan Cr pada permukaan substrat Si. Dari spektrum Raman diperoleh panjang gelombang pada puncak yaitu 538 cm- 1. Hal ini menunjukkan adanya interaksi antara C dan Cr, sehingga puncak yang nampak adalah puncak karbon.Kata kunci : Lapisan tipis, Difraksi sinar-x, Konduktasni, Permukaan, Raman.AbstractTo had been done to make thin film of C-Cr on Si surface. Deposition carbon-chrom ( C-Cr ) on Si surface was electrode shape in the thin film. The measurement ctystall structure thin film of C-Cr on Si surface tobe done was with x-ray diffraction which was C and Cr. The crystall size and strain of C-Cr thin film was 18.40 A and strain 17.78 %. The measurement electrical properties on deposition of C-Cr and without deposition as follow conductance and capacitance. The result indicated, that conductance of C-Cr thin film and capacitance decreased with increasing of frequence and also pellet shape of C- Cr and C substract. The result of surface morphology with SEM, indicate to had became of thin film C-Cr on the Si surface. The examine thin film tobe done for know what the thin film of C-Cr was shaped with find out C and Cr on the Si substrate surface. From Raman spectrum tobe find out wave number on the peak 520.56 cm-1, indication that interaction between C and Cr, so that peeak which visible was pek of C.Key word : Thin film, X-ray diffraction, Conductance, Surface, Raman

Structural, Morphological and Electrical Properties of CdO Thin Film Produced by Sol–Gel Spin Coating Procedure

2020 ◽  
Vol 12 (1) ◽  
pp. 75-77
Author(s):  
Renu Kumari ◽  
Vipin Kumar
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Cadmium Oxide ◽  
Hall Effect Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Coating Procedure ◽  
Direct Current Measurement

A sol–gel spin coating procedure was used to produce cadmium oxide (CdO) thin film on the precleaned glass substrate. The structural, morphological and electrical properties of the produced film were specified by XRD, SEM and two-probe method. The polycrystalline nature with cubical structure of the cadmium oxide (CdO) thin film was confirmed by X-ray diffraction (XRD). Scanning electron microscope (SEM) confirms the uniform formation of film. The semiconducting character of the film was confirmed by electrical conductivity (direct current) measurement in dark. The Hall effect measurement of cadmium oxide film confirms the n-type conductivity.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

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