Highly Heat-Dissipating and High-Voltage SOI-LDMOS Power Device

2012 ◽  
Vol 614-615 ◽  
pp. 1574-1577
Author(s):  
Xiao Ming Yang ◽  
Yu Cai ◽  
Tian Qian Li
Keyword(s):  
Surface Temperature ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Power Device ◽  
Drift Region ◽  
Type Layer ◽  
Simulation Results ◽  
Buried Layers ◽  
P Type ◽  
Maximum Surface Temperature

A highly heat-dissipating and high-voltage SOI-LDMOS power device is proposed. Its substrate was selectively etched, like the Camsemi SOI, so breakdown voltage was decided only by lateral breakdown voltage. A p-type layer and a Si3N4 buried layers were introduced into the new structure for lowering specific on-resistance and temperature. The simulation results show that breakdown voltage is 747 V at the 37 μm length of the drift region, and specific on-resistance and maximum surface temperature are reduced by 94.48% and 15.43% than those of Camsemi SOI, respectively.

A New Slope SOI-LDMOS High-Voltage Power Device

2012 ◽  
Vol 236-237 ◽  
pp. 797-800
Author(s):  
Xiao Ming Yang ◽  
Yu Cai ◽  
Tian Qian Li
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Power Device ◽  
Drift Region ◽  
Electrical Field ◽  
New Device ◽  
Buried Oxide ◽  
Drain Electrode ◽  
Surface Electric Field

A slope SOI-LDMOS power device is proposed for high-voltage. When a positive bais is applied to the drain electrode, holes are induced and astricted by the slope buried oxide layer. So a high density positive charge layer is formed on the buried oxide layer. The electrical field in the buried oxide is improved as well as vertical breakdown voltage by the layer. Because the thickness of the drift region linearly increases from the source to the drain, the surface electric field is optimized, resulting in increase of lateral breakdown voltage. In this paper, the electric characteristics of the new device are simulated by Medici softerware. The result is shown that above 600 V breakdown voltage is obtained at 1μm thick buried oxide layer. The breakdown voltage is higher by three times than that of conventional SOI LDMOS.

scholarly journals Design of a Low on Resistance High Voltage (120V) Novel 3D NLDMOS with Side Isolation Based on 0.35um BCD Process Technology

2018 ◽  
Vol 201 ◽  
pp. 02004
Author(s):  
Shao-Ming Yang ◽  
Gene Sheu ◽  
Tzu Chieh Lee ◽  
Ting Yao Chien ◽  
Chieh Chih Wu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
High Performance ◽  
Power Device ◽  
Simulation Tool ◽  
Process Technology ◽  
Surface Field ◽  
Kirk Effect ◽  
Tcad Simulation ◽  
Reduced Surface

High performance power device is necessary for BCD power device. In this paper, we used 3D Synopsis TCAD simulation tool Sentaurus to develop 120V device and successfully simulated. We implemented in a conventional 0.35um BCDMOS process to present of a novel high side 120V LDMOS have reduced surface field (RESURF) and Liner p-top structure with side isolation technology. The device has been research to achieve a benchmark specific on-resistance of 189 mΩ-mm2 while maintaining horizontal breakdown voltage and vertical isolation voltage both to target breakdown voltage of 120V. In ESOA, we also proposed a better performance of both device without kirk effect.

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Comparative Study of SiC MOSFETs in High Voltage Switching Operation

2012 ◽  
Vol 717-720 ◽  
pp. 1081-1084 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Yuki Nakano ◽  
Takashi Nakamura
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Power Device ◽  
Resistive Load ◽  
Density Condition ◽  
Switching Speed ◽  
Switching Operation ◽  
Switching Performance ◽  
Turn On

SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

2014 ◽  
Vol 778-780 ◽  
pp. 808-811
Author(s):  
Xiao Chuan Deng ◽  
Cheng Yuan Rao ◽  
Jin Wei ◽  
Hua Ping Jiang ◽  
Miao Miao Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Parallel Plane ◽  
Simulation Results ◽  
Schottky Rectifier ◽  
Novel Variation

A novel variation of lateral etching junction termination extension (VLE-JTE) for Silicon carbide (SiC) power junction barrier Schottky rectifier (JBS) using a single mask is proposed and investigated. Simulation results shows that the breakdown voltage of JBS terminated with VLE-JTE can achieve 6500V, reaching up to more than 95% of parallel-plane junction bulk breakdown. Moreover, it implements a single mask with window areas varying laterally away from the main junction instead of extra ion implantation or etching steps to achieve multiple-zone JTE, making it easier to be implemented in applications.

New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode

2005 ◽  
Vol 483-485 ◽  
pp. 953-956 ◽  
Author(s):  
Tetsuya Hayashi ◽  
Hideaki Tanaka ◽  
Yoshio Shimoida ◽  
Satoshi Tanimoto ◽  
Masakatsu Hoshi
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Drift Region ◽  
Heterojunction Diode ◽  
Inductive Load ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Blocking Voltage ◽  
Switching Characteristics ◽  
P Type

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.

High-voltage n-channel metal-oxide-semiconductor technology

1985 ◽  
Vol 63 (6) ◽  
pp. 897-900 ◽  
Author(s):  
R. S. Abbott ◽  
J. P. Ellul ◽  
R. A. Hadaway ◽  
J. J. White
Keyword(s):  
High Voltage ◽  
Processing Technique ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Design Parameters ◽  
Drift Region ◽  
Semiconductor Technology ◽  
Device Structures ◽  
State Breakdown ◽  
P Type

High-voltage devices have been integrated into a standard silicon-gate NMOS IC fabrication process utilizing a novel front-end processing technique. Fabrication-process steps and modelling results are described in this paper. Driver transistors are characterized in terms of drift-region implant dose, design parameters, and substrate resistivities. Present work has optimized process parameters and device structures to yield "off" state breakdown up to 270 V for 6–10 Ω∙cm, p-type, [Formula: see text] substrates.

Design and Fabrication of Non-Uniform Spacing Multiple Floating Field Limiting Rings for 6500V 4H-SiC JBS Diodes

2020 ◽  
Vol 1014 ◽  
pp. 120-125
Author(s):  
Ling Sang ◽  
Li Xin Tian ◽  
Fei Yang ◽  
Jing Hua Xia ◽  
Rui Jin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Design Methodology ◽  
Electric Field Distribution ◽  
Multiplication Factor ◽  
Edge Termination ◽  
Region Division ◽  
Simulation Results ◽  
Uniform Ring ◽  
Linear Increment

Designed for 6500V 4H-SiC JBS diodes, a highly-efficient termination structure of a non-uniform multiple floating field limiting rings (MFFLR) featuring with a non-uniform ring spacing and a multiple region division is studied and purposed. For each region, ring spacing is modulated independently by a multiplication factor and a linear increment factor. The non-uniform MFFLR structure is simulated and optimized for a better electric field distribution and a higher breakdown voltage. Based on the simulation results, 4H-SiC JBS diodes with the optimized non-uniform termination designs are fabricated. Experimental results show that the SiC JBS diode with optimized non-uniform MFFLR termination structure can achieve a breakdown voltage of up to 7800 V, and its termination efficiency is about 94% of an ideal parallel-plane junction’s. Our results demonstrate that the optimized non-uniform MFFLR termination structure is capable for SiC JBS diodes with breakdown voltage of 6500V and above. Our results can provide a valuable design methodology of edge termination structures for other high-voltage SiC devices.

Improving breakdown voltage performance of SOI power device with folded drift region

2016 ◽  
Vol 25 (7) ◽  
pp. 077201 ◽  
Author(s):  
Qi Li ◽  
Hai-Ou Li ◽  
Ping-Jiang Huang ◽  
Gong-Li Xiao ◽  
Nian-Jiong Yang
Keyword(s):  
Breakdown Voltage ◽  
Power Device ◽  
Drift Region ◽  
Voltage Performance
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