Review on Preparation and Properties of High-K Dielectric Material Based on Lanthanum Doped Barium Titanate

2015 ◽  
Vol 819 ◽  
pp. 173-178 ◽  
Author(s):  
Nur Farahin Abdul Hamid ◽  
Rozana A.M. Osman ◽  
Mohd Sobri Idris ◽  
Mohd Rosydi Zakaria
Keyword(s):  
Barium Titanate ◽  
Dielectric Material ◽  
Ferroelectric Properties ◽  
Dielectric Behavior ◽  
Relaxor Ferroelectric ◽  
Preparation Methods ◽  
High K ◽  
Doped Barium Titanate ◽  
High K Dielectric ◽  
High Dielectric

Lanthanum doped barium titanate (BaTiO3) were studied for high-K dielectric and exhibit a relaxor ferroelectric properties and it can be prepared by using various method. Relaxor ferroelectric offers a wide temperature and frequency range of application for materials with high dielectric constant for microelectronic application. This paper reviews the preparation methods, the important features, advantages and limitation for the lanthanum doped barium titanate. Thus, the phase purity and mixture selected also been review on the second part of the article. The article concludes with a brief discussion of the methods with good dielectric behavior. The objectives of this paper are to determine the selection of suitable preparation methods and the properties of the high-K dielectric based on pure barium titanate and lanthanum doped barium titanate.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

scholarly journals Tin Doped Barium Titanate (BaTiO3) Synthesized through Molten Salt Method as Promising Dielectric Material

2021 ◽  
Vol 33 (9) ◽  
pp. 2212-2218
Author(s):  
Richa Tomar ◽  
Karan Surana ◽  
Pankaj Gupta ◽  
N.B. Singh
Keyword(s):  
Dielectric Constant ◽  
Barium Titanate ◽  
Dielectric Material ◽  
Transference Number ◽  
Molten Salt Method ◽  
Pxrd Pattern ◽  
X Ray ◽  
Ionic Transference Number ◽  
Doped Barium Titanate ◽  
High Dielectric

Tin doped barium titanate (BaTiO3) was prepared through NaCl-KCl eutectic melt at 800 ºC. The synthesized materials were well characterized using powder-X-ray diffraction (PXRD) and FESEM-EDX spectroscopy. Cubic structure was observed in the PXRD pattern of tin doped sample. The crystallite size of tin doped barium titanate nanoparticles was found to be around 17 nm. Nanorods and aggregated nanocubes like structure were observed in the FESEM images and elemental ratio of doped ions was confirmed by energy dispersive X-ray spectrum (EDX). Electrical properties observed for the synthesized material were found better than those reported in the literature prepared by other methods. The dielectric constant and dielectric loss were measured in the temperature range of 100-400 K and the frequencies varying from 10 kHz to 10,000 kHz. The tin doped barium titanate showed rod type morphology with an unprecedented high dielectric constant of ~17,500 at 10 Hz. Dielectric constant values decreased with increasing frequency. The change in dielectric constant with frequency was well explained by Maxwell-Wanger polarization effect. The impedance and ionic transference number (tion) were also measured.

scholarly journals Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials

2021 ◽  
Vol 11 (5) ◽  
pp. 3882
Author(s):  
Hakkee Jung ◽  
Byungon Kim
Keyword(s):  
Dielectric Material ◽  
Dielectric Materials ◽  
Double Gate ◽  
Short Channel ◽  
Current Ratio ◽  
Arithmetic Average ◽  
High K ◽  
Double Gate Mosfet ◽  
High K Dielectric ◽  
High Dielectric

<span>The variation of the on-off current ratio is investigated when the asymmetrical junctionless double gate MOSFET is fabricated as a SiO<sub>2</sub>/high-k dielectric stacked gate oxide. The high dielectric materials have the advantage of reducing the short channel effect, but the rise of gate parasitic current due to the reduction of the band offset and the poor interface property with silicon has become a problem. To overcome this disadvantage, a stacked oxide film is used. The potential distributions are obtained from the Poission equation, and the threshold voltage is calculated from the second derivative method to obtain the on-current. As a result, this model agrees with the results from other papers. </span><span>The on-off current ratio is in proportion to the arithmetic average of the upper and lower high dielectric material thicknesses. The on-off current ratio of 10<sup>4</sup> or less is shown for SiO<sub>2</sub>, but the on-off current ratio for TiO<sub>2</sub> (<em>k</em>=80) increases to 10<sup>7</sup> or more.</span>

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k &gt; 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Multiferroic Bi0.7Dy0.3FeO3 films as high k dielectric material for advanced non-volatile memory devices

2009 ◽  
Vol 45 (16) ◽  
pp. 821 ◽  
Author(s):  
K. Prashanthi ◽  
S.P. Duttagupta ◽  
R. Pinto ◽  
V.R. Palkar
Keyword(s):  
Dielectric Material ◽  
Memory Devices ◽  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric

Effect of Barium Titanate Additives on Dielectric Property of PLZT Ceramics

2015 ◽  
Vol 804 ◽  
pp. 21-24
Author(s):  
Ladapak Chumprasert ◽  
Narit Funsueb ◽  
Apichart Limpichaipanit ◽  
Athipong Ngamjarurojana
Keyword(s):  
Barium Titanate ◽  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Dielectric Behavior ◽  
Rhombohedral Structure ◽  
Soaking Time ◽  
Oxide Powders ◽  
Formation And Evolution

Barium titanate (BT) additive in lanthanum modified lead zirconate titanate (PLZT) was used to modify the microstructure and resultant properties of (1-x) PLZT– x BT where x= 0, 0.05, 0.10, 0.15, 0.20 and 0.25. Oxide powders were synthesized by mixed oxide synthetic route via a rapid vibro-milling technique. All of samples were sintered at 1275°C with the soaking time of 4 h. The ceramic samples were investigated for phase formation and evolution, dielectric behavior and ferroelectric properties. Introduction of BT in PLZT lattice resulted in ferroelectric tetragonal-rhombohedral structure, and further increase of BT content resulted in stabilizing the ferroelectric tetragonal perovskite phase. Dielectric behavior and ferroelectric properties were examined as a function of BT content.

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