Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

2015 ◽  
Vol 821-823 ◽  
pp. 403-406 ◽  
Author(s):  
Koutarou Kawahara ◽  
Hiroshi Watanabe ◽  
Naruhisa Miura ◽  
Shuhei Nakata ◽  
Satoshi Yamakawa
Keyword(s):  
Cross Section ◽  
Ionization Energy ◽  
Capture Cross Section ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Shallow Acceptor ◽  
Wide Range ◽  
Emission Time ◽  
P Type

Shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices; larger ionization energy and/or a smaller capture cross-section of levels in the SiC bandgap lead to a larger emission time constant and slower response of carriers. Nevertheless, knowledge about those levels is very limited. In this study, we clarified the ionization energy and the capture cross section of the Al shallow acceptor in 4H-SiC in a wide range of doping concentration by preparing appropriate samples and measuring them by thermal admittance spectroscopy. Furthermore, high densities of deep levels were discovered in Al+-implanted samples, which can degrade 4H-SiC device performance without any care.

Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC

2006 ◽  
Vol 911 ◽  
Author(s):  
Katsunori Danno ◽  
Tsunenobu Kimoto
Keyword(s):  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Arrhenius Plot ◽  
Deep Level ◽  
Deep Levels ◽  
Emission Time ◽  
Transient Spectroscopy ◽  
P Type ◽  
Thermal Stability Of

AbstractDeep levels in as-grown and electron-irradiated p-type 4H-SiC have been investigated by deep level transient spectroscopy (DLTS). Three hole traps, namely HK2, HK3, and HK4, could be detected in the temperature range from 350K to 700K. Activation energies of the hole traps were estimated to be 0.84 eV for HK2, 1.27 eV for HK3, and 1.44 eV for HK4 from the Arrhenius plot of emission-time constants assuming temperature-independent capture cross section. By double-correlated DLTS (DDLTS), they were revealed to be donor-like (+/0) traps. The concentrations of HK3 and HK4 centers were clearly increased by low-energy (116 keV) electron irradiation. Based on thermal stability of the HK3 and HK4 centers up to 1350°C and the dependence of HK4 concentration on the electron fluence, they may originate from a complex including defect(s) caused by carbon displacement.

Analysis of Deep Levels in GaAs Detector Diodes Using Impedance Spectroscopy

1993 ◽  
Vol 302 ◽  
Author(s):  
C Eiche ◽  
M Fiederle ◽  
J Weese ◽  
D Maier ◽  
D Ebling ◽  
...  
Keyword(s):  
Cross Section ◽  
Regularization Method ◽  
Capture Cross Section ◽  
Relaxation Times ◽  
Thermal Relaxation ◽  
Simulated Data ◽  
Deep Levels ◽  
Admittance Spectroscopy ◽  
Thermal Relaxation Times ◽  
Level 2

ABSTRACTImpedance or admittance spectroscopy has been shown to be a very convenient tool for the investigation of deep levels in semiconductor junctions. At constant temperature a frequency sweep is performed. After that the impedance signal is analysed by a regularization method based on Tikhonov regularization in order to obtain the thermal relaxation times of the deep levels present in the junction. The high resolution of the regularization method in comparison to conventional techniques is demonstrated using simulated data. The temperature dependence of the thermal relaxation times provides information about the properties of the deep levels such as activation energy or capture cross section. Two donor levels with activation energies dE1 =0.58 eV and dE2 =0.68 eV are observed in our detector diodes. It can be shown that the concentration of level 2 is increased after irradiation.

Grain Boundary Passivation in Polycrystalline Silicon : A D.L.T.S. Study

1981 ◽  
Vol 5 ◽  
Author(s):  
Prakash C. Srivastava ◽  
Jacques C. Bourgoin
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Cross Section ◽  
Polycrystalline Silicon ◽  
Capture Cross Section ◽  
Narrow Band ◽  
Total Density ◽  
Capture Cross ◽  
Deuterium Plasma ◽  
P Type

ABSTRACTAfter treatment in a deuterium plasma, the D.L.T.S. spectrum associated with grain boundaries in p–type Si is found to reduce to a narrow band centered at 0.32 ± 0.02 eV with a total density of 5 ⨉ 1015 cm−2 . However, the capture cross-section, measured to be ∼ 2 × 10−20 cm2 , is 10 times larger than the apparent cross-section associated with the states present in unpassivated material.

Dislocation States and Deformation-Induced Point Defects in Plastically Deformed Germanium

2009 ◽  
Vol 156-158 ◽  
pp. 289-294 ◽  
Author(s):  
S. Shevchenko ◽  
A.N. Tereshchenko
Keyword(s):  
Heat Treatment ◽  
Cross Section ◽  
Point Defects ◽  
Capture Cross Section ◽  
Main Type ◽  
Narrow Line ◽  
Capture Cross ◽  
P Type ◽  
Ionization Enthalpy ◽  
Dlts Spectra

We used the DLTS and photoluminescence (PL) techniques to study the deep states due to dislocations and deformation-induced point defects (PDs) in plastically deformed p-type germanium single crystals containing predominantly 60 dislocations with density ND, ranging from 105 to 106 cm-2. The narrow line near the temperature 140K dominates in the DLTS spectra. The ionization enthalpy and the capture cross section for holes traps indicate that the substitution copper atoms Cus are the main type of PDs. A decrease of the Cus atoms concentration and redistribution of the intensity in the PL spectra after the heat treatment of deformed samples at a temperature 500 °C are attributed to the diffusion of copper atoms to dislocations resulting in the appearance of “dirty” regular segments of 60 dislocations.

scholarly journals Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

2019 ◽  
Vol 12 (4) ◽  
pp. 1413-1425 ◽  
Author(s):  
Artem Musiienko ◽  
Pavel Moravec ◽  
Roman Grill ◽  
Petr Praus ◽  
Igor Vasylchenko ◽  
...  
Keyword(s):  
Charge Transport ◽  
Cross Section ◽  
Formation Energy ◽  
Capture Cross Section ◽  
Deep Levels ◽  
Capture Cross ◽  
Mixed Conductivity ◽  
Halide Perovskites ◽  
Halide Perovskite

Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices.

scholarly journals Investigation of defects in structures based on BP/Si heterojunction

2021 ◽  
Vol 2103 (1) ◽  
pp. 012088
Author(s):  
A A Maksimova ◽  
A I Baranov ◽  
A V Uvarov ◽  
D A Kudryashov ◽  
A S Gudovskikh
Keyword(s):  
Activation Energy ◽  
Conduction Band ◽  
Cross Section ◽  
Deep Level Transient Spectroscopy ◽  
Capture Cross Section ◽  
Deep Level ◽  
Admittance Spectroscopy ◽  
Capture Cross ◽  
Defect Level ◽  
Transient Spectroscopy

Abstract In this work the properties of the BP/Si heterojunction interface were investigated by capacitance methods, the deep levels transient spectroscopy method and admittance spectroscopy. Admittance spectroscopy did not detect any defects, but the deep level transient spectroscopy showed response with activation energy of 0.33 eV and capture cross-section σn=(1-10)·10-19 cm2 and defect concentration (NT) is in the order of 1013 cm-3. This defect level is a trap for electron with position of 0.33 eV below the conduction band in region near the BP/Si interface.

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