Review on the Materials Properties and Photoelctrochemical (PEC) Solar Cells of CdSe, Cd1-xZnxSe, Cd1-xInxSe, Thin Films

2015 ◽  
Vol 832 ◽  
pp. 1-27
Author(s):  
S. Rani ◽  
S. Thanka Rajan ◽  
J. Shanthi ◽  
A. Ayeshamariam ◽  
M. Jayachandran
Keyword(s):  
Thin Films ◽  
Energy Conversion ◽  
Electronic Devices ◽  
Visible Region ◽  
Electron Beam Evaporation ◽  
Light Emitting ◽  
Materials Properties ◽  
Pec Solar Cells ◽  
Photo Detectors ◽  
Cell Fabrication

CdSe and its Zn/In/suitable element doped films are very important interesting materials for the realization of electronic and photoelectronic devices for energy conversion. The growth of ternary In/Zn/Cd selenides opens up the possibility of their applications for novel opto-electronic devices in the visible region of electromagnetic radiation. The (CdZn)Se and (CdIn)Se systems enable a tunable band gap region between 1.72 and 2.82 eV at normal temperature facilitating the development of several new light emitting diodes, photo detectors, blue green lasers. Thin films of these materials are usually synthesized by molecular beam epitaxy, electron beam evaporation and chemical techniques. Many researchers have reported about these materials prepared by different techniques and their properties as well as their use in PEC cell fabrication mainly followed by other optoelectronic devices also. This review gives an account of all these data in a representative distributed manner so as to cover many decades of published papers in this ever green topic of energy conversion research.

scholarly journals Optical properties of spray pyrolysis deposited Cds:Al thin films

2015 ◽  
Vol 39 (1) ◽  
pp. 25-30 ◽  
Author(s):  
A Hasnat Rubel ◽  
J Podder
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Near Infrared ◽  
Visible Region ◽  
Cadmium Sulphide ◽  
Infrared Region ◽  
Photo Detectors ◽  
Direct Energy ◽  
Academy Of Sciences

Aluminium doped cadmium sulphide thin films were prepared on glass substrate using aqueous solution of cadmium sulphide and thiourea salts by spray pyrolysis deposition (SPD) technique. Its optical properties were analyzed as a function of doping concentration. The direct energy band-gap of Al-doped CdS films was estimated in the range of 2.25 to 2.48 eV. The optical spectra of Cd1-xAlxS ternary system exhibit high absorption near visible region and transmission throughout the near-infrared region (600 - 1200 nm). Thus so obtained hetero-junction films are suitable for fabrication of photo detectors, solar cells and other optoelectronics devices.Journal of Bangladesh Academy of Sciences, Vol. 39, No. 1, 25-30, 2015

scholarly journals Studies on structural, optical and electrical properties of electron beam evaporated Cu2SnSe3 thin films

2016 ◽  
Vol 34 (4) ◽  
pp. 703-707 ◽  
Author(s):  
P. Prathiba Jeya Helan ◽  
K. Mohanraj ◽  
G. Sivakumar
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electrical Properties ◽  
Visible Region ◽  
Thin Film Deposition ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Raman Analysis

AbstractThe present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.

Blue like Diamond Light Emitting Devices to be Massproduced

1989 ◽  
Vol 162 ◽  
Author(s):  
M. Kadono ◽  
S. Hayashi ◽  
N. Hirose ◽  
K. Itoh ◽  
T. Inushima ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Electronic Devices ◽  
Chemical Properties ◽  
Wide Band ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Applications ◽  
Diamond Thin Films

Recently, there has been considerable interest in electronic device applications of diamond thin films. The chemical properties of diamond is stable. So diamond thin films become very useful if they are used for electronic devices. We consider diamond thin films as blue like emitting devices because diamond has a wide band gap(about 5.5eV). Some light emitting devices have been known [1]. First of all we have been trying to deposit diamond thin films on the large areas. If they deposit on the large areas, light emitting devices may be massproduced.

Structure and Photoelectric Properties of Dy Doped CdS Polycrystalline Thin Films

2013 ◽  
Vol 750-752 ◽  
pp. 1901-1905 ◽  
Author(s):  
Kai Zou ◽  
Rong Ping Li ◽  
Yong Sheng Liu ◽  
Lei Tian ◽  
Song Feng
Keyword(s):  
Thin Films ◽  
Hexagonal Phase ◽  
Visible Region ◽  
Electron Beam Evaporation ◽  
Stoichiometric Ratio ◽  
Photoelectric Properties ◽  
Polycrystalline Thin Films ◽  
Cds Thin Films ◽  
Dy Doping ◽  
Cds Films

Using chemical bath deposition (CBD) deposited CdS thin films for two times and prepared CdS films contained different thickness Dy-doping layer by connecting using the vacuum electron beam evaporation method, then studied the structure, surface morphology, optical and electrical properties of the films. The results show that no-doped CdS films are the cubic structure and preferentially oriented in the (111) directions. Its conductive type is N type. After Dy doping the CdS thin films are mixed structure by cubic and hexagonal phase, the conductive type is still N type, the uniformity and compactness of the films are improved. At the same time, the proportion of Cd and S atoms in Dy-doping films are more close to the stoichiometric ratio. Dy-doping can also reduce the resistivity of the films, result in an increase of carrier concentration and improve the transmittance in the visible region.

Investigation of Phase Transformation and Optical Properties of TiO2 Thin Films Deposited by Electron Beam Evaporation

2014 ◽  
Vol 941-944 ◽  
pp. 1279-1282
Author(s):  
Lin Hua Xu ◽  
Gai Ge Zheng ◽  
Yu Lin Chen ◽  
Jing Su
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Anatase Phase ◽  
Visible Region ◽  
Electron Beam Evaporation ◽  
Atomic Force ◽  
Optical Bandgaps ◽  
Uv Visible

TiO2thin films were deposited by ion beam assisted electron beam evaporation and annealed at 200, 300, 400 and 500 ¡æ in air for one hour. The crystal structures and morphology of the samples were analyzed by an X-ray diffractometer and an atomic force microscope. The transmittance spectra were recorded by a UV-visible spectrophotometer. The results show that both the as-deposited TiO2thin film and that one annealed at 200 ¡æ are amorphous. The sample annealed at 300 ¡æ crystallizes in pure brookite phase and is preferentially oriented along the (121) plane. When the annealing temperature rises up to 400 and 500 ¡æ, TiO2thin films turn into pure anatase phase. All the samples exhibit high transmittance in the visible region. With the increase of annealing temperature, the transmittance slightly declines and the optical bandgaps also slightly decreases.

Study on the Optical and Electrical Properties of Organic Semiconductor Thin Films for OLEDs

2012 ◽  
Vol 502 ◽  
pp. 106-110
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
X. He ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Organic Semiconductor ◽  
Visible Region ◽  
Optical Transmittance ◽  
Vacuum Sublimation ◽  
Light Emitting ◽  
Semiconductor Thin Films ◽  
Current Voltage ◽  
Organic Semiconductor Materials ◽  
Hydroxy Quinoline

Organic semiconductor thin films of aluminum (III) bis(2-methyl-8-quninolinato)-4- phenylphenolate (BAlq), -naphthylphenylbiphenyl amine (NPB), and tris(8-hydroxy-quinoline) aluminum (AlQ) for organic light-emitting diodes (OLEDs) were deposited by the vacuum sublimation technique. The optical properties in the UV-visible region of the thin films were investigated by optical transmittance and absorption spectra. The band gaps were obtained from direct allowed transitions at room temperature by means of the Tauc plots. The Urbach energy and the slope of Urbach edge were evaluated, respectively according to the Urbach-edges method. The thin film devices of sandwich structure were fabricated using these organic semiconductor materials, in addition, the effective carrier mobility, free carrier density, and electrical conductivity of the thin films were calculated in terms of the measured current-voltage characteristics of the devices.

Effect of La Doping on ZnO Thin Films by Spray Pyrolysis

2019 ◽  
Vol 397 ◽  
pp. 206-212 ◽  
Author(s):  
Allag Nassiba ◽  
Ben Haoua Boubaker ◽  
Saied Chahnez ◽  
Barani Djamel ◽  
Segueni Leila ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Uv Detectors ◽  
Light Emitting ◽  
Doped Zno

In this study, Zinc oxide (ZnO) undoped and Lanthanum doped (ZnO: La) thin films were deposited on 400°C heated glass using spray pyrolysis technique with moving nozzle. The components (Zn (CH3COO)2, 2H2O) and (LaCl3, 7H2O) were used as sources to produce ZnO thin film and doped Lanthanum, respectively. Effects of dopant on the optical and structural properties of undoped and 0, 2 and 4 wt. % Lanthanum doped ZnO thin films were studied. Optical transmittance spectra of the films showed high transparency of about 98% in visible region. The optical gap for ZnO and 0, 2 and 4 wt. % La doped ZnO thin films were found to be in 3.25-3.28 [eV] range. The X-ray diffraction showed that the thin films have hexagonal wurtzite structure with a strong (002) as preferred orientation, whereas the crystalline size was ranged in 15.89-33.45 nm. The ZnO thin films are promising to be used a light emitting diodes, gas sensor and UV detectors applications.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Enhanced piezoluminescence in non-stoichiometric ZnS:Cu microparticle based light emitting elastomers

2017 ◽  
Vol 5 (22) ◽  
pp. 5387-5394 ◽  
Author(s):  
Jiayong Gan ◽  
Min Gyu Kang ◽  
Michael A. Meeker ◽  
Giti A. Khodaparast ◽  
Robert J. Bodnar ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Light Emitting ◽  
Sensing Applications ◽  
Photon Sources

Piezoluminescence (PZL), also referred to as mechanoluminescence (ML), is a promising energy conversion mechanism for realizing mechanically driven photon sources including hand-held displays, lighting, bioimaging and sensing applications.

Sign in / Sign up

Export Citation Format

Share Document