Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

2016 ◽  
Vol 858 ◽  
pp. 715-718
Author(s):  
Asumi Hirooka ◽  
Hitoshi Habuka ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Etch Rate ◽  
Epitaxial Film ◽  
Etching Rate ◽  
Rate Behavior

4H-silicon carbide epitaxial film was etched using chlorine trifluoride gas. The etch rate of C-face at 2-100 % and at various temperatures was 0.8 – 10 μm min-1, which was comparable to those of the silicon carbide substrates. The surface morphology observed after the etching was very smooth, in contrast to that of the substrate showing many pits.

scholarly journals Etch rate and surface morphology of polycrystalline β-silicon carbide using chlorine trifluoride gas

2006 ◽  
Vol 514 (1-2) ◽  
pp. 193-197 ◽  
Author(s):  
Hitoshi Habuka ◽  
Satoko Oda ◽  
Yasushi Fukai ◽  
Katsuya Fukae ◽  
Takashi Takeuchi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Etch Rate

Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifloride Gas

2019 ◽  
Vol 13 (3) ◽  
pp. 39-52 ◽  
Author(s):  
Yutaka Miura ◽  
Yusuke Katsumi ◽  
Keiko Tanaka ◽  
Satoko Oda ◽  
Hitoshi Habuka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Rate Behavior

Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

2009 ◽  
Vol 1201 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Jun Young Kim ◽  
Seung-Cheol Han ◽  
Joon Seop Kwak ◽  
Ji-Myon Lee
Keyword(s):  
Sulfuric Acid ◽  
Surface Morphology ◽  
Chemical Etching ◽  
Etch Rate ◽  
Room Temperature ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractThe etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Etching Morphology of Vitreous Silicon Dioxide in HF-Based Solution

2014 ◽  
Vol 633 ◽  
pp. 107-111
Author(s):  
Zhu Feng Shao ◽  
Shu Zhong Tian ◽  
Hui Wang ◽  
Zai Kui Xiang
Keyword(s):  
Surface Morphology ◽  
Silicon Dioxide ◽  
Quartz Glass ◽  
Metal Ion ◽  
Plane Surface ◽  
Etching Rate ◽  
Radius Of Curvature ◽  
Micro Cracks ◽  
Quartz Glasses

The surface morphology of quartz glass etched in HF acid is influenced by many factors, such as the quality of polishing, types of the quartz glasses, metal ion in HF acid, etc. This paper conducted an analysis on these factors and tried to make improvements. Meanwhile, this experiment approved of the model of both destructive layer and the varying of closed micro-cracks in the process of etching. Besides, the changing law of both ditch-like and pit-like flaws was investigated in this experiment, and conclusions could be drawn as follows: at the concave curvature, the bigger the radius of curvature is, the faster the etching will be; The etching rate with protruding curvature is higher than that of concave curvature; The etching rate with concave curvature is lower than that on the plane surface.

The Selectivity of Reactive Ion Etch of Ga0.5LIn0.49P/Gaas

1994 ◽  
Vol 337 ◽  
Author(s):  
J.W. Wu ◽  
S.H. Chan ◽  
K.C. Lin ◽  
C.Y. Chang ◽  
E.Y. Chang
Keyword(s):  
Etch Rate ◽  
Etching Rate ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Gas Mixture ◽  
Precise Control

ABSTRACTThe Ga0.51In0.49p/GaAs system has better desired property (ΔEC >ΔEV) than the conventional AlGaAs/GaAs system for heterojunction bipolar transistor (HBT) application. However, in the fabrication of HBTs, a precise control of the etch of the epilayer is very important. In this study, CH4/H2 and BCl3/SF6 were used for the reactive ion etch of the Ga0.51In0.49P/GaAs. It is found that the etch rate of Ga0.51In0.49P could be higher than that of GaAs with CH4/H2 gas mixture under appropriate etching conditions. While in the case of BCl3/SF6, the etching rate of GaAs could be much higher than that of the Ga0.51In0.49P. By properly using CH4/H2 and BCl3/SF6, the fabrication of Ga0.51In0.49P-based device using reactive ion etch could be easily achieved.

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 468-471 ◽  
Author(s):  
Yuki Mori ◽  
Mieko Matsumura ◽  
Hirotaka Hamamura ◽  
Toshiyuki Mine ◽  
Akio Shima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Dielectric Breakdown ◽  
Optical Emission ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tem Analysis ◽  
Mos Capacitor ◽  
Step Bunching ◽  
Electrical Stress

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

scholarly journals Dry etching of silicon carbide in ICP with high anisotropy and etching rate

2020 ◽  
Vol 862 ◽  
pp. 022039
Author(s):  
A A Osipov ◽  
A B Speshilova ◽  
E V Endiiarova ◽  
A A Osipov ◽  
S E Alexandrov
Keyword(s):  
Silicon Carbide ◽  
Etching Rate ◽  
Dry Etching ◽  
High Anisotropy

The Influence of HBr Discharge Ambience on Poly-Si/SiO2 Etching Selectivity

1991 ◽  
Vol 223 ◽  
Author(s):  
E. Ikawa ◽  
K. Tokashiki ◽  
T. Kikkawa ◽  
Y. Teraoka ◽  
I. Nishiyama
Keyword(s):  
Plasma Etching ◽  
Parallel Plate ◽  
Etch Rate ◽  
Etching Rate ◽  
Mass Analysis ◽  
Ion Etching ◽  
Loading Effect ◽  
Batch Type ◽  
Etching Selectivity ◽  
Hbr Plasma

ABSTRACTThe influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.

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