Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 465-468
Author(s):  
Kiichi Kobayakawa ◽  
Kosuke Muraoka ◽  
Hiroshi Sezaki ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
...  
Keyword(s):  
Electric Field ◽  
Surface Treatment ◽  
Dry Etching ◽  
Etching Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Breakdown Electric Field ◽  
Surface Etching

Effects of CF4etching on 4H-SiC MOS capacitor were investigated. Fluorine atoms were introduced to surface of 4H-SiC using CF4dry etching process as a surface treatment, and 4H-SiC MOS capacitors with dry-oxide were fabricated with this treatment. As the results, breakdown electric field of the MOS capacitors was increased and variation of the characteristics became lower than that of MOS capacitor without this treatment.

Characterisation of HfO2/Si/SiC MOS Capacitors

2011 ◽  
Vol 679-680 ◽  
pp. 674-677
Author(s):  
Peter M. Gammon ◽  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Owen J. Guy ◽  
N. Rimmer ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electric Field ◽  
Leakage Currents ◽  
Mos Capacitors ◽  
Breakdown Electric Field ◽  
Narrow Bandgap

In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of HfO2 on Si, SiC, Si/SiC and SiO2/SiC have been fabricated and electrically tested. The new HfO2/Si/SiC capacitors provide the greatest breakdown electric field of 3.5 MV/cm, whilst leakage currents are minimised through the insertion of the narrow bandgap material. The Si layer, which is wafer bonded to the SiC, is proven to be stress free through Raman spectroscopy, whilst TEM and EDX prove that the interface is free of contaminants.

Erratum: Dry etching process for fabrication of optoelectronic gratings in III-V substrates

1992 ◽  
Vol 28 (3) ◽  
pp. 338
Author(s):  
A.S. Gozdz ◽  
J.A. Shelburne ◽  
R.S. Robinson ◽  
C.C. Chang
Keyword(s):  
Dry Etching ◽  
Etching Process

scholarly journals Low-temperature smoothing method of scalloped DRIE trench by post-dry etching process based on SF6 plasma

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
Jin Soo Park ◽  
Dong-Hyun Kang ◽  
Seung Min Kwak ◽  
Tae Song Kim ◽  
Jung Ho Park ◽  
...  
Keyword(s):  
Low Temperature ◽  
Dry Etching ◽  
Smoothing Method ◽  
Etching Process

Grain size reduction by utilizing a very thin CrW seedlayer and dry-etching process in CoCrTaNiPt longitudinal media

2000 ◽  
Vol 87 (9) ◽  
pp. 6860-6862 ◽  
Author(s):  
Satoru Yoshimura ◽  
D. D. Djayaprawira ◽  
Tham Kim Kong ◽  
Yusuke Masuda ◽  
Hiroki Shoji ◽  
...  
Keyword(s):  
Grain Size ◽  
Dry Etching ◽  
Size Reduction ◽  
Etching Process

scholarly journals Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

2021 ◽  
Author(s):  
Martin Ehrhardt ◽  
Pierre Lorenz ◽  
Jens Bauer ◽  
Robert Heinke ◽  
Mohammad Afaque Hossain ◽  
...  
Keyword(s):  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Etching Process ◽  
High Tech ◽  
Etching Time ◽  
High Quality ◽  
Machined Surface ◽  
Reactive Plasma ◽  
New Processing

AbstractHigh-quality, ultra-precise processing of surfaces is of high importance for high-tech industry and requires a good depth control of processing, a low roughness of the machined surface and as little as possible surface and subsurface damage but cannot be realized by laser ablation processes. Contrary, electron/ion beam, plasma processes and dry etching are utilized in microelectronics, optics and photonics. Here, we have demonstrated a laser-induced plasma (LIP) etching of single crystalline germanium by an optically pumped reactive plasma, resulting in high quality etching. A Ti:Sapphire laser (λ = 775 nm, EPulse/max. = 1 mJ, t = 150 fs, frep. = 1 kHz) has been used, after focusing with a 60 mm lens, for igniting a temporary plasma in a CF4/O2 gas at near atmospheric pressure. Typical etching rate of approximately ~ 100 nm / min and a surface roughness of less than 11 nm rms were found. The etching results were studied in dependence on laser pulse energy, etching time, and plasma – surface distance. The mechanism of the etching process is expected to be of chemical nature by the formation of volatile products from the chemical reaction of laser plasma activated species with the germanium surface. This proposed laser etching process can provide new processing capabilities of materials for ultra—high precision laser machining of semiconducting materials as can applied for infrared optics machining.

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

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