Characterisation of HfO2/Si/SiC MOS Capacitors

2011 ◽  
Vol 679-680 ◽  
pp. 674-677
Author(s):  
Peter M. Gammon ◽  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Owen J. Guy ◽  
N. Rimmer ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Electric Field ◽  
Leakage Currents ◽  
Mos Capacitors ◽  
Breakdown Electric Field ◽  
Narrow Bandgap

In this paper, the integration of HfO2 onto SiC has been investigated via a number of different test structures. Capacitors consisting of HfO2 on Si, SiC, Si/SiC and SiO2/SiC have been fabricated and electrically tested. The new HfO2/Si/SiC capacitors provide the greatest breakdown electric field of 3.5 MV/cm, whilst leakage currents are minimised through the insertion of the narrow bandgap material. The Si layer, which is wafer bonded to the SiC, is proven to be stress free through Raman spectroscopy, whilst TEM and EDX prove that the interface is free of contaminants.

Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors

2018 ◽  
Vol 924 ◽  
pp. 465-468
Author(s):  
Kiichi Kobayakawa ◽  
Kosuke Muraoka ◽  
Hiroshi Sezaki ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
...  
Keyword(s):  
Electric Field ◽  
Surface Treatment ◽  
Dry Etching ◽  
Etching Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Breakdown Electric Field ◽  
Surface Etching

Effects of CF4etching on 4H-SiC MOS capacitor were investigated. Fluorine atoms were introduced to surface of 4H-SiC using CF4dry etching process as a surface treatment, and 4H-SiC MOS capacitors with dry-oxide were fabricated with this treatment. As the results, breakdown electric field of the MOS capacitors was increased and variation of the characteristics became lower than that of MOS capacitor without this treatment.

New graphene derivative with N-methylpyrrolidone: suspension, structural, optical and electrical properties

2019 ◽  
Vol 21 (23) ◽  
pp. 12494-12504 ◽  
Author(s):  
Evgenyi Yakimchuk ◽  
Vladimir Volodin ◽  
Irina Antonova
Keyword(s):  
Electrical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Optical And Electrical Properties ◽  
Leakage Currents ◽  
Breakdown Electric Field ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

G-NMP is a high-k dielectric with a permittivity of 7–9, low leakage currents of 107–108 A cm−2, an ultralow charge of −(1–4) × 1010 cm−2 and a breakdown electric field strength of (2–3) × 105 V cm−1.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates

2003 ◽  
Vol 433-436 ◽  
pp. 435-438
Author(s):  
Rudi Ono ◽  
Makato Fujimaki ◽  
Hoon Joo Na ◽  
Satoshi Tanimoto ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Electric Field ◽  
Epitaxial Layer ◽  
Breakdown Electric Field

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

scholarly journals Electric‐field‐induced Raman spectroscopy

1988 ◽  
Vol 88 (10) ◽  
pp. 6039-6048 ◽  
Author(s):  
David L. Andrews ◽  
Nick P. Blake
Keyword(s):  
Raman Spectroscopy ◽  
Electric Field

An investigation of dielectric breakdown on a pressurized, flowing oil switch - WITHDRAWN

2009 ◽  
Author(s):  
◽  
Peter A. Norgard
Keyword(s):  
Electric Field ◽  
Rise Time ◽  
High Performance ◽  
Dielectric Breakdown ◽  
High Energy ◽  
Operating Characteristics ◽  
University Of Missouri ◽  
Breakdown Electric Field ◽  
Alpha Olefin ◽  
Oil Flow

WITHDRAWN - [ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT REQUEST OF AUTHOR.] In the not-so-distant future, a need is foreseen for a high-performance, compact switch that is capable of repetitively switching kilovolts to megavolts and several hundred joules, all while delivering a square pulse with a fast current rise time. Many industrial and military applications currently exist that could take advantage of these operating characteristics, and many more are surely to be developed in the coming years. The proposed approach to realizing the goal of producing a fast rise time, high voltage, high energy, repetitive switch technology is to employ a pressurized, flowing oil dielectric switching medium. Oil pressure and oil flow will be used to increase the rate of dielectric recovery following a high energy discharge, thus enabling a much higher operating repetition frequency; oil pressure will be utilized to control gaseous switching byproducts, and oil flow will be utilized to control solid and gaseous switching byproducts. The well-known increase in breakdown electric field strength with increasing oil pressure will be utilized to reduce the gap separation, thus reducing the inductance of the electrical arc and increasing the rise time of the current pulse produced during breakdown. An experiment was designed and undertaken to evaluate the complete statistical performance of the breakdown electric field of an emerging dielectric liquid, poly-[alpha]olefin, with respect to variations in oil pressure, oil flow rate, peak rate of rise of the voltage, and gap separation.

MEASUREMENT OF LEAKAGE CURRENTS AND QUASI-STATIONARY ELECTRIC FIELD IN THE SURFACE AREA OF THE ISS RS IN THE EARTH'S IONOSPHERE

2021 ◽  
pp. 5-21
Author(s):  
Yury V. LISAKOV ◽  
Olga V. LAPSHINOVA ◽  
Nikolay M. PUSHKIN ◽  
Viktor P. KONOSHENKO ◽  
Nikolay V. MATVEEV ◽  
...  
Keyword(s):  
Electric Field ◽  
Spatial Configuration ◽  
Flow Direction ◽  
Electrical Measurements ◽  
Leakage Currents ◽  
Current Leakage ◽  
Stationary Electric Field ◽  
Charged Component ◽  
Stage 1 ◽  
Orbital Data

The paper presents the results of analysis of electrical measurements performed in the space experiment "Impulse (stage 1)" on the Service module of the ISS RS. This experiment investigated the effects of the interaction of the charged component of the ionosphere to the surface of large KA, which is the ISS. This paper analyses the measurement of quasi-stationary electric field and current leakage, was, respectively, sensors of the vibration type and flat probes from the Complex control electrophysical parameters (CCEP), developed by SPJ MT. To study the dependence of measurements from the ionosphere flow direction to the surface of the ISS RS was installed two sets of sensors with the direction of the angle of "visibility" in the Nadir (towards the Earth) and to "satellite footprint " (against the velocity vector of the ISS). Carried out analysis of common regularities measurements depending on the sun-shadow environment on orbit ISS motions and depending on current geophysical dynamics of the ionosphere. Massive the measurements including more than 170 telemetric sessions were analyzed. More than 11000 hours of measurements current of leakage (or runoff current) and measurements of quasi-stationary electric field with discretization 1s and UT binding to each point were analysed. The data measurements, geophysical and orbital data were collected in an electronic album. It is shown that experimental data correlate with the crossing time of the ISS boundaries known geophysical structures: the noon Meridian, the Main ionospheric failure (MIF), the boundaries diffuse intrusion (BDI), the Equatorial Geomagnetic anomaly (EA). In this regard, despite the specificity of the ISS (the spacecraft super big sizes, the most complex spatial configuration) similar measurements, nevertheless, are quite suitable for monitoring researches of some features of an ionosphere at the level of F2 layer with a temporary scale from 1s and can be used for more detailed study of the geophysical structures and related effects in the ionosphere. In addition, the results obtained can be used for the analysis of disturbances of electromagnetic conditions near the surface of the ISS RS, for monitoring potential and currents of leakage on the surface of the ISS. Keywords: electrophysical measurements, sensors of the vibration type, flat probes, electric field, current leakage, geophysical structure, ionosphere

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