The Effect of Reaction Time on Optical Trapping Nanostructure Formation on the Multi-Crystalline Silicon by Metal-Assisted Chemical Etching

2016 ◽  
Vol 703 ◽  
pp. 219-223
Author(s):  
Yu Ren Xiang ◽  
Chun Lan Zhou ◽  
Wen Jing Wang
Keyword(s):  
Reaction Time ◽  
Chemical Etching ◽  
Particle Deposition ◽  
Optical Trapping ◽  
Deposition Time ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Weighted Average ◽  
Etching Time ◽  
Metal Assisted Chemical Etching

The surface texturing has been considered as an important process for the high-efficiency solar cell fabrication. A two-step metal-assisted chemical etching method was used to produce light trapping nanostructure on multi-crystalline silicon wafers. And the effect of the reaction time on the optical trapping properties of the nanostructures was investigated. Both the density and the size of Ag particles are highly dependent on the deposition time. The etching time instead of the Ag particle deposition time dominates the reflectance of the nanostructures when the etching time is above 30 s. The lowest spectrum-weighted average reflectance obtained in this study is about 9.2%.

MnO2/HF/HNO3/H2O System for High-Performance Texturization on Multi-Crystalline Silicon

2019 ◽  
Vol 960 ◽  
pp. 263-267
Author(s):  
Huan Liu ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Wen Jing Wang
Keyword(s):  
High Performance ◽  
Crystalline Silicon ◽  
Weighted Average ◽  
Etching Time ◽  
Component Ratio ◽  
Surface Reflectance ◽  
Simple Processing ◽  
Ratio Range ◽  
Etching System ◽  
Si Wafer

It was found that the addition of MnO2 particles into the HF/HNO3/H2O system could significantly improve the texturization etching performance on multi-crystalline silicon (mc-Si) wafer. For a wide component ratio range of HF/HNO3/H2O from HF-rich to HNO3-rich, by optimizing the MnO2 usage and the etching time, the addition of MnO2 particles always reduced the texture reflectance greatly. Low weighted average surface reflectance (Ra) for the AM1.5G sun spectrum in the wavelength range of 380–1100 nm was achieved on both the slurry wire sliced (SWS) mc-Si and the diamond wire sliced (DWS) mc-Si. Due to its excellent effect and simple processing, the MnO2/HF/HNO3/H2O etching system can be expected as a candidate for high-performance texturization on mc-Si wafer, especially on DWS mc-Si wafer.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching

2020 ◽  
Vol 92 (3) ◽  
pp. 30402
Author(s):  
Shiying Zhang ◽  
Zhenhua Li ◽  
Qingjun Xu
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Optimal Solution ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Selected Area Electron Diffraction ◽  
Initial Silicon ◽  
Metal Assisted Chemical Etching

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

Broadband Anti-Reflection in Black Silicon Fabricated by Two-Step Silver-Assisted Wet Chemical Etching for Photovoltaics

2020 ◽  
Vol 301 ◽  
pp. 167-174
Author(s):  
Auwal Abdulkadir ◽  
Nur Afidah Md. Noor ◽  
Azlan Abdul Aziz ◽  
Mohd Zamir Pakhuruddin
Keyword(s):  
Chemical Etching ◽  
Short Circuit ◽  
Wavelength Region ◽  
Weighted Average ◽  
Short Circuit Current ◽  
Morphological Characterization ◽  
Etching Time ◽  
Black Silicon ◽  
Si Nanowires ◽  
Ag Nps

This paper reports broadband anti-reflection in black silicon (b-Si) fabricated by two-step metal-assisted chemical etching (MACE) for potential photovoltaic (PV) applications. The method involves deposition of silver nanoparticles (Ag NPs) in aqueous solution of HF:AgNO3, followed by etching in HF:H2O2:DI H2O solution for different duration (10-25 s). Effects of etching time towards surface morphological and optical properties of b-Si nanowires are investigated. Surface morphological characterization confirms presence of b-Si nanowires with heights of 350-570 nm and diameter of 150-300 nm. The b-Si nanowires exhibit outstanding broadband anti-reflection due to refractive index grading effect. This is represented as weighted average reflection (WAR) in the 300-1100 nm wavelength region. After 20 s of etching, b-Si nanowires with height of 570 nm and width of about 200 nm are produced. The nanowires demonstrate WAR of 5.5%, which represents the lowest WAR in this investigation. This results in absorption of 95.6% at wavelength of 600 nm. The enhanced broadband light absorption yields maximum potential short-circuit current density (Jsc(max)) of up to 39.7 mA/cm2, or 51% enhancement compared to c-Si reference. This facile b-Si fabrication method for broadband enhanced anti-reflection could be a promising technique to produce potential PV devices with high photocurrent.

Metal-Assisted Chemical Etching of Multicrystalline Silicon in HF/ Na2S2O8 Produces Porous Silicon

2005 ◽  
Vol 480-481 ◽  
pp. 139-144 ◽  
Author(s):  
T. Hadjersi ◽  
N. Gabouze ◽  
A. Ababou ◽  
M. Boumaour ◽  
W. Chergui ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Multicrystalline Silicon ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
External Bias ◽  
Etching Method ◽  
Metal Assisted Chemical Etching

A new metal-assisted chemical etching method using Na2S2O8 as an oxidant is proposed to form a porous layer on a multicrystalline silicon (mc-Si). This method does not need an external bias and enables formation of uniform porous silicon layers, more rapidly than the conventional stain etching method. A thin layer of Pd is deposited on the mc-Si surface prior to immersion in a solution of HF and Na2S2O8. The characterisations of etched layer formed by this method as a function of etching time were investigated by scanning electron microscopy, X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) and reflectance spectroscopy. It shows that the surface is porous and the etching is independent of grain orientation. In addition, reflectance measurements made with a variety of etching conditions show a lowering of the reflectance from 25 % to 6 % measured with respect to the bare as-cut substrate. However, this result can be improved by changing the experimental conditions (concentration, time, temperature, …).

scholarly journals Nanotexturing of Silicon by Metal-Assisted Chemical Etching

2015 ◽  
Vol 16 (1) ◽  
pp. 140-144
Author(s):  
Ye. I. Berezhanskyi ◽  
S. I. Nichkalo ◽  
V. Yu. Yerokhov ◽  
A. A. Druzhynin
Keyword(s):  
Chemical Etching ◽  
Silicon Surface ◽  
High Efficiency ◽  
Surface Texturing ◽  
Geometric Parameters ◽  
Silicon Surfaces ◽  
Photovoltaic Converter ◽  
Efficient Approach ◽  
Metal Assisted Chemical Etching

This paper describes the method of metal assisted chemical etching (MacEtch) as an efficient approach for structuring the silicon surface with the ability to manage effectively the geometric parameters of the structures and their distribution on the surface of substrate. The surface texturing technology was presented and the structured silicon surfaces with regular and irregular types of surfaces have been obtained. This technology can be used for nanotexturing of the surface of silicon photovoltaic converters. The model of photovoltaic converter based on the crater-textured silicon surface with high efficiency was presented.

Influence of Fabrication Parameter on the Nanostructure of SiNWs under HF/AgNO3/Fe(NO3)3 Etching System

2014 ◽  
Vol 809-810 ◽  
pp. 93-98
Author(s):  
Yong Yin Xiao ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Shao Yuan Li ◽  
Yu Ping Li ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Room Temperature ◽  
Etching Time ◽  
Large Area ◽  
One Step ◽  
Fabrication Parameter ◽  
Metal Assisted Chemical Etching ◽  
Fabrication Parameters ◽  
Oxidative Species ◽  
Etching System

Large-area SiNWs has been successfully fabricated through one-step metal-assisted chemical etching process at room temperature. The effects of key fabrication parameters (AgNO3 concentration, Fe (NO3)3 concentration, and etching time) on the nanostructure SiNWs were carefully investigated by SEM, TEM, respectively. The results show that AgNO3 concentration and Fe (NO3)3 concentration play important roles to the lengths and arrangements of SiNWs arrays in one-step MACE. The morphological transition of Si surfaces from solid nanowires to porous nanowires can be found with increasing AgNO3 concentration and Fe (NO3)3 concentration, which indicates that the re-dissolved Ag+ would work as the main oxidative species for oxidizing the silicon substrate and forming SiNWs in the HF/ AgNO3/ Fe (NO3)3 etching system. The length of SiNWs is increased with increasing AgNO3 concentration from 0.005 mol/L to 0.02 mol/L and etching time, the chemical polish phoenomenon can be observed when the Fe (NO3)3 concentration increases to 0.5 mol/L. A novel mechanism is proposed to explain the formation of SiNWs in HF/ AgNO3/ Fe (NO3)3 solution.

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